A new approach to fully unstructured three-dimensional Delaunay mesh generation with improved element quality

P. Fleischmann, S. Selberherr
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引用次数: 11

Abstract

Mesh generation is known to play a critical role in semiconductor device and process simulation. We present a new approach suitable for dealing with the increasing complexity of the device boundaries and interfaces as well as moving boundaries. It is recently understood that techniques which have worked well in the past (octree methods, intersection and bisection based methods, cartesian methods) are at their limits today. It is in this spirit that we developed a fully unstructured gridding method which we believe is the only potential way to deal with the complexity of future devices and to handle moving boundary situations. Our algorithm also incorporates local improvement of element quality by non-delaunay quality measures, while still maintaining the Delaunay property.
一种改进单元质量的完全非结构化三维德劳内网格生成新方法
网格生成在半导体器件和工艺模拟中起着至关重要的作用。我们提出了一种新的方法,适合于处理日益复杂的设备边界和接口以及移动边界。最近人们认识到,过去工作得很好的技术(八叉树方法,基于交集和平分的方法,笛卡尔方法)今天已经到了极限。正是本着这种精神,我们开发了一种完全非结构化的网格方法,我们相信这是处理未来设备复杂性和处理移动边界情况的唯一潜在方法。我们的算法在保持Delaunay属性的同时,还通过非Delaunay质量措施对元素质量进行局部改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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