{"title":"Simulation of thermal oxidation and diffusion processes by parallel PDE solver L/sub i/SS","authors":"W. Joppich, S. Mijalkovic","doi":"10.1109/SISPAD.1996.865286","DOIUrl":null,"url":null,"abstract":"In this paper a rigorous approach to simulate thermal oxidation and diffusion phenomena is presented. Because the numerical problems will increase in future, especially when looking towards three-dimensional process simulation, special emphasis is laid upon a parallel approach which additionally uses an optimal order solution method. Based on an environment for the parallel solution of elliptic and parabolic PDEs, L/sub i/SS, such a tool was developed.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.1996.865286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper a rigorous approach to simulate thermal oxidation and diffusion phenomena is presented. Because the numerical problems will increase in future, especially when looking towards three-dimensional process simulation, special emphasis is laid upon a parallel approach which additionally uses an optimal order solution method. Based on an environment for the parallel solution of elliptic and parabolic PDEs, L/sub i/SS, such a tool was developed.