{"title":"用并行PDE求解器L/sub /SS模拟热氧化和扩散过程","authors":"W. Joppich, S. Mijalkovic","doi":"10.1109/SISPAD.1996.865286","DOIUrl":null,"url":null,"abstract":"In this paper a rigorous approach to simulate thermal oxidation and diffusion phenomena is presented. Because the numerical problems will increase in future, especially when looking towards three-dimensional process simulation, special emphasis is laid upon a parallel approach which additionally uses an optimal order solution method. Based on an environment for the parallel solution of elliptic and parabolic PDEs, L/sub i/SS, such a tool was developed.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation of thermal oxidation and diffusion processes by parallel PDE solver L/sub i/SS\",\"authors\":\"W. Joppich, S. Mijalkovic\",\"doi\":\"10.1109/SISPAD.1996.865286\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a rigorous approach to simulate thermal oxidation and diffusion phenomena is presented. Because the numerical problems will increase in future, especially when looking towards three-dimensional process simulation, special emphasis is laid upon a parallel approach which additionally uses an optimal order solution method. Based on an environment for the parallel solution of elliptic and parabolic PDEs, L/sub i/SS, such a tool was developed.\",\"PeriodicalId\":341161,\"journal\":{\"name\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.1996.865286\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.1996.865286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation of thermal oxidation and diffusion processes by parallel PDE solver L/sub i/SS
In this paper a rigorous approach to simulate thermal oxidation and diffusion phenomena is presented. Because the numerical problems will increase in future, especially when looking towards three-dimensional process simulation, special emphasis is laid upon a parallel approach which additionally uses an optimal order solution method. Based on an environment for the parallel solution of elliptic and parabolic PDEs, L/sub i/SS, such a tool was developed.