A triangular mesh with the interface protection layer suitable for the diffusion simulation

Abstract

An automatic Delaunay partitioned mesh generation which is effective in reduction of numerical errors in a diffusion process near the interface or in the thin layer is proposed. An interface protection layer which consists of a rectangular mesh locally conformed to a material interface is introduced. A validity of the interface protection layer for avoiding an artificial threshold voltage shift of about 1 V due to a boron penetration through a pMOS gate oxide is demonstrated.