三维光刻胶曝光与显影模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865291

H. Kirchauer, Siegfried Selberherr

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引用次数: 4

摘要

在所有技术中，光刻技术在当今半导体工业的模式转移中占据领先地位。光刻特征尺寸的减小以及器件的非平面性的增加给光刻工艺带来了复杂的问题。三维光刻模拟器包括掩模照明，抗蚀剂曝光和抗蚀剂显影是进一步改进的经济有效的工具。我们提出了一个完整的三维模拟模型，重点关注抗蚀剂曝光和抗蚀剂显影步骤。

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Three-dimensional photoresist exposure and development simulation

Among all technologies photolithography holds the leading position in pattern transfer in today's semiconductor industry. The reduction of the lithographic feature sizes towards or even beyond the used wavelength and the increasing nonplanarity of devices create complicated problems for the lithography process. A three-dimensional photolithography simulator including mask illumination, resist exposure and resist development is a cost effective tool for further improvements. We present a complete three-dimensional simulation model focusing on the resist exposure and resist development step.

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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