亚微米CMOS晶体管掺杂输运模型的二维定标

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865299

F. Lau, P. Kupper, K. Gebhardt

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引用次数: 1

摘要

在大多数情况下，损伤增强扩散(DED)的复杂过程模型是从一维测量(垂直SIMS或扩散阻力)校准的。然而，亚微米范围内的MOS晶体管本质上是二维器件。在本文中，我们分析了一个先进的DED模型的一维校准是否足以正确地实现源/漏掺杂剂的横向亚扩散。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Two-dimensional calibration of dopant transport models for submicron CMOS transistors

In most cases complex process models for damage enhanced diffusion (DED) are calibrated from one-dimensional measurements (vertical SIMS or spreading resistance). MOS transistors in the submicron regime however are inherently two-dimensional devices. In this paper we analyse, whether a one-dimensional calibration of an advanced DED model is sufficient for a correct lateral subdiffusion of the source/drain dopants.

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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