T. Syo, Y. Akiyama, S. Kumashiro, I. Yokota, S. Asada
{"title":"具有界面保护层的三角形网格适合于扩散模拟","authors":"T. Syo, Y. Akiyama, S. Kumashiro, I. Yokota, S. Asada","doi":"10.1109/SISPAD.1996.865325","DOIUrl":null,"url":null,"abstract":"An automatic Delaunay partitioned mesh generation which is effective in reduction of numerical errors in a diffusion process near the interface or in the thin layer is proposed. An interface protection layer which consists of a rectangular mesh locally conformed to a material interface is introduced. A validity of the interface protection layer for avoiding an artificial threshold voltage shift of about 1 V due to a boron penetration through a pMOS gate oxide is demonstrated.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A triangular mesh with the interface protection layer suitable for the diffusion simulation\",\"authors\":\"T. Syo, Y. Akiyama, S. Kumashiro, I. Yokota, S. Asada\",\"doi\":\"10.1109/SISPAD.1996.865325\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An automatic Delaunay partitioned mesh generation which is effective in reduction of numerical errors in a diffusion process near the interface or in the thin layer is proposed. An interface protection layer which consists of a rectangular mesh locally conformed to a material interface is introduced. A validity of the interface protection layer for avoiding an artificial threshold voltage shift of about 1 V due to a boron penetration through a pMOS gate oxide is demonstrated.\",\"PeriodicalId\":341161,\"journal\":{\"name\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.1996.865325\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.1996.865325","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A triangular mesh with the interface protection layer suitable for the diffusion simulation
An automatic Delaunay partitioned mesh generation which is effective in reduction of numerical errors in a diffusion process near the interface or in the thin layer is proposed. An interface protection layer which consists of a rectangular mesh locally conformed to a material interface is introduced. A validity of the interface protection layer for avoiding an artificial threshold voltage shift of about 1 V due to a boron penetration through a pMOS gate oxide is demonstrated.