Optical-electronic simulation of a GaAs metal-semiconductor-metal (MSM) photodetector

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865267

T. Korner, P. D. Yoder, L. Bomholt, W. Fichtner

引用次数: 4

Abstract

A complete optical-electronical simulation of a GaAs based MSM photodetector is presented. In the modeling, rigorous electromagnetic methods for the light propagation have been combined with particle-based Monte-Carlo electronic device simulation methods.

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砷化镓金属-半导体-金属(MSM)光电探测器的光电模拟

给出了基于砷化镓的MSM光电探测器的完整光电仿真。在建模中，将光传播的严格电磁方法与基于粒子的蒙特卡罗电子器件仿真方法相结合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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