表面态对GaAs功率mesfet影响的数值模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865302

P. Francis, Y. Ohno, M. Nogome, Y. Takahashi

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引用次数: 1

摘要

只提供摘要形式。利用二维器件模拟器和表面态统计模型，分析了表面态对GaAs功率mesfet栅极偏置区的影响。在假设电子陷阱型表面态和空穴陷阱型表面态的情况下，发现陷阱的性质会导致fet的直流性能和脉冲工作有很大的差异。

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Numerical simulations of surface states effects on GaAs power MESFETs

Summary form only given. The effects of surface states on the gate offset regions of GaAs power MESFETs are analyzed using a two-dimensional device simulator with a Shockley-Read-Hall statistics model for the surface states. Assuming electron trap type surface states and hole trap type surface states, it is found that the trap properties cause a large difference in DC performance and pulse operation of the FETs.

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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