Inverse modeling profile determination: implementation issues and recent results

Abstract

Since we first reported on the inverse modeling technique to determine oneand two-dimensional doping profiles of a MOSFET, we have had considerable success in using the method. The procedure has become an essential component in our TCAD characterization efforts. In this paper, we first present a recent object-oriented implementation based on the Tcl/Tk toolkit. We then discuss enhancements and adaptations to MINIMOS to make it more suitable as a Poisson solver for capacitance calculation. We also investigate the use of V/sub th/ data instead of inner sidewall capacitance data to determine the 2D channel doping and elaborate on the merits and limitations of this approach. Finally, we show recent results that illustrate the applicability of the method for the characterization of deep submicron technology, and the importance of accurate 2D doping profiles for device simulation.