一种新的高速非平衡点缺陷退火模拟模型

M. Kawakami, M. Sugaya, S. Kamohara
{"title":"一种新的高速非平衡点缺陷退火模拟模型","authors":"M. Kawakami, M. Sugaya, S. Kamohara","doi":"10.1109/SISPAD.1996.865288","DOIUrl":null,"url":null,"abstract":"As state-of-the-art processes involve fast annealing times at reduced temperatures, it has become increasingly important to incorporate non-equilibrium point defect modeling into the simulation of diffusion. Nonequilibrium point defect modeling takes into account the actual distribution of the defects in the silicon when simulating the annealing of impurities. However, simulation time increases dramatically with the number of equations necessary to simulate multiple types of impurities simulated simultaneously (by a factor of n/sup 2/, n=no. of equations). Previous physically-based methods used 1D simulation of one impurity, since 2D simulation of multiple impurities required excessive CPU time making it difficult to use for practical applications. In this work, for the first time, a high-speed physically-based 2D method of simulating the annealing of multiple impurities is presented which requires only a fraction of the CPU time for simulation of several impurities simultaneously.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new high-speed non-equilibrium point defect model for annealing simulation\",\"authors\":\"M. Kawakami, M. Sugaya, S. Kamohara\",\"doi\":\"10.1109/SISPAD.1996.865288\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As state-of-the-art processes involve fast annealing times at reduced temperatures, it has become increasingly important to incorporate non-equilibrium point defect modeling into the simulation of diffusion. Nonequilibrium point defect modeling takes into account the actual distribution of the defects in the silicon when simulating the annealing of impurities. However, simulation time increases dramatically with the number of equations necessary to simulate multiple types of impurities simulated simultaneously (by a factor of n/sup 2/, n=no. of equations). Previous physically-based methods used 1D simulation of one impurity, since 2D simulation of multiple impurities required excessive CPU time making it difficult to use for practical applications. In this work, for the first time, a high-speed physically-based 2D method of simulating the annealing of multiple impurities is presented which requires only a fraction of the CPU time for simulation of several impurities simultaneously.\",\"PeriodicalId\":341161,\"journal\":{\"name\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.1996.865288\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.1996.865288","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

由于最先进的工艺涉及在降低温度下的快速退火时间,因此将非平衡点缺陷建模纳入扩散模拟变得越来越重要。非平衡点缺陷建模在模拟杂质退火过程时考虑了硅中缺陷的实际分布。然而,模拟时间随着同时模拟多种杂质所需的方程数量的增加而急剧增加(通过n/sup 2/, n=no)。方程)。以前基于物理的方法使用一种杂质的一维模拟,因为多种杂质的二维模拟需要过多的CPU时间,因此难以用于实际应用。在这项工作中,首次提出了一种高速的基于物理的二维方法来模拟多种杂质的退火,这种方法只需要CPU时间的一小部分来同时模拟几种杂质。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new high-speed non-equilibrium point defect model for annealing simulation
As state-of-the-art processes involve fast annealing times at reduced temperatures, it has become increasingly important to incorporate non-equilibrium point defect modeling into the simulation of diffusion. Nonequilibrium point defect modeling takes into account the actual distribution of the defects in the silicon when simulating the annealing of impurities. However, simulation time increases dramatically with the number of equations necessary to simulate multiple types of impurities simulated simultaneously (by a factor of n/sup 2/, n=no. of equations). Previous physically-based methods used 1D simulation of one impurity, since 2D simulation of multiple impurities required excessive CPU time making it difficult to use for practical applications. In this work, for the first time, a high-speed physically-based 2D method of simulating the annealing of multiple impurities is presented which requires only a fraction of the CPU time for simulation of several impurities simultaneously.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信