{"title":"一种新的高速非平衡点缺陷退火模拟模型","authors":"M. Kawakami, M. Sugaya, S. Kamohara","doi":"10.1109/SISPAD.1996.865288","DOIUrl":null,"url":null,"abstract":"As state-of-the-art processes involve fast annealing times at reduced temperatures, it has become increasingly important to incorporate non-equilibrium point defect modeling into the simulation of diffusion. Nonequilibrium point defect modeling takes into account the actual distribution of the defects in the silicon when simulating the annealing of impurities. However, simulation time increases dramatically with the number of equations necessary to simulate multiple types of impurities simulated simultaneously (by a factor of n/sup 2/, n=no. of equations). Previous physically-based methods used 1D simulation of one impurity, since 2D simulation of multiple impurities required excessive CPU time making it difficult to use for practical applications. In this work, for the first time, a high-speed physically-based 2D method of simulating the annealing of multiple impurities is presented which requires only a fraction of the CPU time for simulation of several impurities simultaneously.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new high-speed non-equilibrium point defect model for annealing simulation\",\"authors\":\"M. Kawakami, M. Sugaya, S. Kamohara\",\"doi\":\"10.1109/SISPAD.1996.865288\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As state-of-the-art processes involve fast annealing times at reduced temperatures, it has become increasingly important to incorporate non-equilibrium point defect modeling into the simulation of diffusion. Nonequilibrium point defect modeling takes into account the actual distribution of the defects in the silicon when simulating the annealing of impurities. However, simulation time increases dramatically with the number of equations necessary to simulate multiple types of impurities simulated simultaneously (by a factor of n/sup 2/, n=no. of equations). Previous physically-based methods used 1D simulation of one impurity, since 2D simulation of multiple impurities required excessive CPU time making it difficult to use for practical applications. In this work, for the first time, a high-speed physically-based 2D method of simulating the annealing of multiple impurities is presented which requires only a fraction of the CPU time for simulation of several impurities simultaneously.\",\"PeriodicalId\":341161,\"journal\":{\"name\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.1996.865288\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.1996.865288","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new high-speed non-equilibrium point defect model for annealing simulation
As state-of-the-art processes involve fast annealing times at reduced temperatures, it has become increasingly important to incorporate non-equilibrium point defect modeling into the simulation of diffusion. Nonequilibrium point defect modeling takes into account the actual distribution of the defects in the silicon when simulating the annealing of impurities. However, simulation time increases dramatically with the number of equations necessary to simulate multiple types of impurities simulated simultaneously (by a factor of n/sup 2/, n=no. of equations). Previous physically-based methods used 1D simulation of one impurity, since 2D simulation of multiple impurities required excessive CPU time making it difficult to use for practical applications. In this work, for the first time, a high-speed physically-based 2D method of simulating the annealing of multiple impurities is presented which requires only a fraction of the CPU time for simulation of several impurities simultaneously.