1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)最新文献_第4页

3D solid modeling of IC structures using simulated surface topography 利用模拟表面形貌对集成电路结构进行三维实体建模

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865309

K. Wang, H. Park, Zhiping Yu, E. Kan, R. Dutton

引用次数: 5

Three-dimensional simulation of ion implantation 离子注入的三维模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865255

J. Lorenz, K. Tietzel, A. Bourenkov, H. Ryssel

引用次数: 2

Effect of passivation film stress on shift in threshold voltage of GaAs FETs 钝化膜应力对GaAs场效应管阈值电压位移的影响

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865268

H. Miura, K. Ohshika, H. Masuda

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引用次数: 1

Control of crystalline defects on wafers by using simulation in heat treating 热处理过程中晶圆缺陷的模拟控制

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865278

K. Nakao, S. Segawa, T. Shimazu

引用次数: 0

Simulation of boron diffusion in Si based on the kick-out mechanism 基于踢出机制的硼在硅中的扩散模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865256

M. Uematsu

引用次数: 3

Simulation of isothermal current filament states in GaAs structures GaAs结构中等温电流灯丝态的模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865304

A. Vashchenko, Y. Martynov, V.F. Sinkevitch

引用次数: 0

A consistent dynamic MOSFET model for low-voltage applications 用于低压应用的一致动态MOSFET模型

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865327

G. Schrom, A. Stach, S. Selberherr

引用次数: 2

Grid generation for three-dimensional process and device simulation 网格生成三维过程和设备仿真

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865321

P. Fleischmann, R. Sabelka, A. Stach, R. Strasser, S. Selberherr

引用次数: 23

Nano-electronics-a new field for SISPAD 纳米电子学——SISPAD的新领域

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865245

T. Sugano

引用次数: 1

Modeling and simulation of oxygen precipitation in Si: precipitate-point defect interactions and influence of hydrogen Si中氧析出的建模与模拟:析出点缺陷相互作用及氢的影响

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865259

S. Senkader, G. Hobler, C. Schmeiser

引用次数: 0