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1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)最新文献

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Three dimensional nonlinear viscoelastic oxidation modeling 三维非线性粘弹性氧化模型
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865290
S. Cea, M. Law
{"title":"Three dimensional nonlinear viscoelastic oxidation modeling","authors":"S. Cea, M. Law","doi":"10.1109/SISPAD.1996.865290","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865290","url":null,"abstract":"As device dimensions decrease, modeling of device isolation processes will have to be performed in three dimensions. The progression of the numerics from two dimensions to three dimensions has been eased because FLOOPS is an object oriented simulator. This paper discusses the implementation of the models for nonlinear stress dependent viscoelastic oxidation modeling. A two-step model is used for the growth of oxidation.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116885873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Recursive M-tree method for 3-D adaptive tetrahedral mesh refinement and its application to Brillouin zone discretization 三维自适应四面体网格的递归m树精化及其在布里渊区离散化中的应用
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865277
E. X. Wang, M. Giles, Sia Yu, F. Leon, A. Hiroki, S. Odanaka
{"title":"Recursive M-tree method for 3-D adaptive tetrahedral mesh refinement and its application to Brillouin zone discretization","authors":"E. X. Wang, M. Giles, Sia Yu, F. Leon, A. Hiroki, S. Odanaka","doi":"10.1109/SISPAD.1996.865277","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865277","url":null,"abstract":"We present a high speed adaptive tetrahedral mesh refinement method based on the recursive multi-tree algorithm. To our knowledge, this is the first refinement algorithm that is able to improve the quality of the original mesh. In this paper, the method has been applied to discretize the Brillouin zone of silicon for full band Monte Carlo device simulation. Densities of states for seven electron and hole bands of silicon are computed based on the new refined tetrahedral meshes.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114602752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Implementation of nitride oxidation in the 2D process simulator IMPACT-4 二维过程模拟器IMPACT-4中氮化物氧化的实现
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865260
A. Tixier, V. Senez, B. Baccus, A. Marmiroli
{"title":"Implementation of nitride oxidation in the 2D process simulator IMPACT-4","authors":"A. Tixier, V. Senez, B. Baccus, A. Marmiroli","doi":"10.1109/SISPAD.1996.865260","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865260","url":null,"abstract":"To shrink the dimension of devices, new isolation technologies, with respect to classical LOCOS, have to be evaluated. This paper deals with the study of one of these possible alternatives: the LOCOS/Recessed-LOCOS NCLAD structure. In this process a thin nitride layer encapsulates the oxide-nitride stack to prevent the formation of long bird's beak. The efficiency of this technique is dependent on the nitride oxidation. In order to study this process, via simulation, it is therefore necessary to model nitride oxidation: a \"modified Deal and Grove\" model has been implemented and calibrated in the 2D Process simulator IMPACT-4. The implementation problems and relative solutions are described.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125093792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Monte Carlo simulation of silicon amorphization during ion implantation 离子注入过程中硅非晶化的蒙特卡罗模拟
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865252
W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr
{"title":"Monte Carlo simulation of silicon amorphization during ion implantation","authors":"W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr","doi":"10.1109/SISPAD.1996.865252","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865252","url":null,"abstract":"When a sufficient high dose of energetic ions is implanted into a silicon crystal, irradiated zones of the crystal are transformed to an amorphous state. The thickness and spatial location of the amorphous layers determine the type of the extended defects and the number of point defects remaining in the silicon crystal after a recrystallization step. It is believed that the lateral diffusion of the defects is a possible source of the inverse short channel effect in MOS transistors. We present an accurate multi-dimensional model to predict the range of amorphous layers within ion implanted single-crystal silicon. The critical parameters ruling the amorphization process are the implantation dose D, the ion mass and energy, and the substrate temperature T which are all taken into account by our simulation method.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129709968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Atomistic analysis of the vacancy diffusion mechanism 空位扩散机理的原子分析
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865257
S. List, H. Ryssel
{"title":"Atomistic analysis of the vacancy diffusion mechanism","authors":"S. List, H. Ryssel","doi":"10.1109/SISPAD.1996.865257","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865257","url":null,"abstract":"There is still a large amount of disagreement concerning the basic diffusion mechanisms in silicon. Especially, there has been a long standing controversy about the macroscopic diffusion equations in case of the vacancy mechanism. In this paper we have performed calculations of the diffusion coefficient and the transport coefficient of the dopants that account for the actual crystal structure of silicon. The results depend on the modification of the vacancy potential energy in the vicinity of the dopant atom.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116366651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analytical current conduction model for accumulation-mode SOI PMOS devices 蓄能型SOI PMOS器件的解析电流传导模型
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865300
K. Su, J. Kuo
{"title":"Analytical current conduction model for accumulation-mode SOI PMOS devices","authors":"K. Su, J. Kuo","doi":"10.1109/SISPAD.1996.865300","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865300","url":null,"abstract":"Summary form only given. This paper reports a compact analytical current conduction model for short-channel accumulation-mode SOI PMOS devices. Based on the study, the current conduction mechanism in a short-channel accumulation-mode SOI PMOS device is different from that in a long-channel one. As verified by the experimental data, the compact analytical model considering channel length modulation and pre-pinchoff velocity saturation gives an accurate prediction of the drain current characteristics.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124109825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High performance semiconductor device simulation on shared memory parallel computers 共享内存并行计算机上的高性能半导体器件仿真
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865312
M. Hahad, P. Hopper
{"title":"High performance semiconductor device simulation on shared memory parallel computers","authors":"M. Hahad, P. Hopper","doi":"10.1109/SISPAD.1996.865312","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865312","url":null,"abstract":"The work described in this paper is the evidence that, thanks to parallelization, time can be less of a bottleneck to numerical device simulation. With viable execution times, there is less need for a trade-off between larger structures and finer details to achieve an acceptable accuracy in a reasonable amount. of time. The article shows that Parallel ATLAS runs approximately 3 times faster on a four-processor machine while simulating a wide variety of devices.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133739056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TCAD diagnosis of I/O-pin latchup in scaled-DRAM 缩放dram中I/ o引脚锁存的TCAD诊断
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865317
K. Tsuneno, H. Sato, S. Narui, H. Masuda
{"title":"TCAD diagnosis of I/O-pin latchup in scaled-DRAM","authors":"K. Tsuneno, H. Sato, S. Narui, H. Masuda","doi":"10.1109/SISPAD.1996.865317","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865317","url":null,"abstract":"Summary form only given. This paper describes a TCAD analysis of I/O-pin latchup failure found in a shallow-well CMOS DRAM. The 0.35 /spl mu/m DRAM I/O-pin showed significant degradation in latchup test of JEDEC Standard over-current stress. TCAD diagnosis of the failure was conducted and newly clarified the biasing effect of the guard-band (N/sup +/) layer and the layout-related latchup mechanism, which leads to a practical latchup-immunity design in sub-/spl mu/m CMOS process and layout. To overcome process-margin problem against latchup, a simple CMOS process is proposed for the 0.35 /spl mu/m DRAM.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122025913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hot carrier energy distributions in short channel MOSFETs and the persistence of substrate currents at low drain voltages 短沟道mosfet中的热载流子能量分布和低漏极时衬底电流的持续
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865294
D. W. Dyke, M. Y. Chang, C. Leung, P. Childs
{"title":"Hot carrier energy distributions in short channel MOSFETs and the persistence of substrate currents at low drain voltages","authors":"D. W. Dyke, M. Y. Chang, C. Leung, P. Childs","doi":"10.1109/SISPAD.1996.865294","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865294","url":null,"abstract":"Demonstrates a hybrid Monte Carlo/iterative technique for solving the Boltzmann transport equation and shows it can be used to explain the form of the hot carrier distribution in MOSFETs operating at low drain voltages. We also show that electron-electron interactions near the drain of a MOSFET can account for the persistence of substrate current in MOSFETs operating at low drain voltages and low temperatures.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127048100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi-band Monte Carlo method using anisotropic-analytical multi-band model 采用各向异性分析多波段模型的多波段蒙特卡罗方法
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI: 10.1109/SISPAD.1996.865275
M. Yamaji, K. Taniguchi, C. Hamaguchi
{"title":"Multi-band Monte Carlo method using anisotropic-analytical multi-band model","authors":"M. Yamaji, K. Taniguchi, C. Hamaguchi","doi":"10.1109/SISPAD.1996.865275","DOIUrl":"https://doi.org/10.1109/SISPAD.1996.865275","url":null,"abstract":"Fabrication of Si MOSFET's with a 0.1-/spl mu/m order gate length has now started. The Monte Carlo (MC) method is recognised as the most powerful simulation technique for devices of this size. In this paper we propose a new anisotropic-analytical band model, and we develop a multi-band MC simulator using this model to investigate hot carrier transport in real space.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114841472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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