二维过程模拟器IMPACT-4中氮化物氧化的实现

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865260

A. Tixier, V. Senez, B. Baccus, A. Marmiroli

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引用次数: 1

摘要

为了缩小设备的尺寸，必须评估相对于传统LOCOS的新隔离技术。本文研究了其中一种可能的替代方案:LOCOS/凹槽-LOCOS NCLAD结构。在这个过程中，一层薄薄的氮化物层包裹在氧化物-氮化物堆栈中，以防止长鸟喙的形成。该技术的效率取决于氮化物的氧化。因此，为了通过模拟研究这一过程，有必要对氮化物氧化进行建模:在2D过程模拟器IMPACT-4中实施并校准了“修改后的Deal和Grove”模型。介绍了实现过程中存在的问题及相应的解决方案。

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Implementation of nitride oxidation in the 2D process simulator IMPACT-4

To shrink the dimension of devices, new isolation technologies, with respect to classical LOCOS, have to be evaluated. This paper deals with the study of one of these possible alternatives: the LOCOS/Recessed-LOCOS NCLAD structure. In this process a thin nitride layer encapsulates the oxide-nitride stack to prevent the formation of long bird's beak. The efficiency of this technique is dependent on the nitride oxidation. In order to study this process, via simulation, it is therefore necessary to model nitride oxidation: a "modified Deal and Grove" model has been implemented and calibrated in the 2D Process simulator IMPACT-4. The implementation problems and relative solutions are described.

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1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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