采用各向异性分析多波段模型的多波段蒙特卡罗方法

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865275

M. Yamaji, K. Taniguchi, C. Hamaguchi

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引用次数: 4

摘要

现在已经开始制造栅极长度为0.1-/spl μ /m的硅MOSFET。蒙特卡罗(MC)方法被认为是这种尺寸的设备最强大的模拟技术。本文提出了一种新的各向异性解析带模型，并利用该模型开发了一个多带MC模拟器来研究实际空间中的热载流子输运。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Multi-band Monte Carlo method using anisotropic-analytical multi-band model

Fabrication of Si MOSFET's with a 0.1-/spl mu/m order gate length has now started. The Monte Carlo (MC) method is recognised as the most powerful simulation technique for devices of this size. In this paper we propose a new anisotropic-analytical band model, and we develop a multi-band MC simulator using this model to investigate hot carrier transport in real space.

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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