三维自适应四面体网格的递归m树精化及其在布里渊区离散化中的应用

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865277

E. X. Wang, M. Giles, Sia Yu, F. Leon, A. Hiroki, S. Odanaka

{"title":"三维自适应四面体网格的递归m树精化及其在布里渊区离散化中的应用","authors":"E. X. Wang, M. Giles, Sia Yu, F. Leon, A. Hiroki, S. Odanaka","doi":"10.1109/SISPAD.1996.865277","DOIUrl":null,"url":null,"abstract":"We present a high speed adaptive tetrahedral mesh refinement method based on the recursive multi-tree algorithm. To our knowledge, this is the first refinement algorithm that is able to improve the quality of the original mesh. In this paper, the method has been applied to discretize the Brillouin zone of silicon for full band Monte Carlo device simulation. Densities of states for seven electron and hole bands of silicon are computed based on the new refined tetrahedral meshes.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Recursive M-tree method for 3-D adaptive tetrahedral mesh refinement and its application to Brillouin zone discretization\",\"authors\":\"E. X. Wang, M. Giles, Sia Yu, F. Leon, A. Hiroki, S. Odanaka\",\"doi\":\"10.1109/SISPAD.1996.865277\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a high speed adaptive tetrahedral mesh refinement method based on the recursive multi-tree algorithm. To our knowledge, this is the first refinement algorithm that is able to improve the quality of the original mesh. In this paper, the method has been applied to discretize the Brillouin zone of silicon for full band Monte Carlo device simulation. Densities of states for seven electron and hole bands of silicon are computed based on the new refined tetrahedral meshes.\",\"PeriodicalId\":341161,\"journal\":{\"name\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.1996.865277\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.1996.865277","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

提出了一种基于递归多树算法的高速自适应四面体网格细化方法。据我们所知，这是第一个能够提高原始网格质量的细化算法。本文将该方法应用于全频带蒙特卡罗器件仿真中硅的布里渊区离散化。基于新的精细化四面体网格计算了硅的7个电子带和空穴带的态密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Recursive M-tree method for 3-D adaptive tetrahedral mesh refinement and its application to Brillouin zone discretization

We present a high speed adaptive tetrahedral mesh refinement method based on the recursive multi-tree algorithm. To our knowledge, this is the first refinement algorithm that is able to improve the quality of the original mesh. In this paper, the method has been applied to discretize the Brillouin zone of silicon for full band Monte Carlo device simulation. Densities of states for seven electron and hole bands of silicon are computed based on the new refined tetrahedral meshes.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

自引率

0.00%

发文量