离子注入过程中硅非晶化的蒙特卡罗模拟

W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr
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引用次数: 7

摘要

当足够高剂量的高能离子注入硅晶体时,晶体的辐照区转变为无定形状态。非晶层的厚度和空间位置决定了扩展缺陷的类型和再结晶步骤后硅晶体中保留的点缺陷的数量。认为缺陷的横向扩散可能是MOS晶体管反短沟道效应的一个来源。我们提出了一个精确的多维模型来预测离子注入单晶硅内非晶层的范围。控制非晶化过程的关键参数是注入剂量D、离子质量和能量以及衬底温度T,我们的模拟方法考虑了这些参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Monte Carlo simulation of silicon amorphization during ion implantation
When a sufficient high dose of energetic ions is implanted into a silicon crystal, irradiated zones of the crystal are transformed to an amorphous state. The thickness and spatial location of the amorphous layers determine the type of the extended defects and the number of point defects remaining in the silicon crystal after a recrystallization step. It is believed that the lateral diffusion of the defects is a possible source of the inverse short channel effect in MOS transistors. We present an accurate multi-dimensional model to predict the range of amorphous layers within ion implanted single-crystal silicon. The critical parameters ruling the amorphization process are the implantation dose D, the ion mass and energy, and the substrate temperature T which are all taken into account by our simulation method.
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