Simulation of boron diffusion in Si based on the kick-out mechanism

Abstract

B in-diffusion profiles in Si were simulated based on the kick-out mechanism, taking into account neutral boron interstitials and positively charged and neutral self-interstitials as the diffusion species which primarily contribute to the diffusion. The profiles were satisfactorily fitted by just three parameters, each of which has a clear physical meaning. This study clarifies the essential parameters for B diffusion, which helps to develop a more widely applicable diffusion simulator.