用于低压应用的一致动态MOSFET模型

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865327

G. Schrom, A. Stach, S. Selberherr

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引用次数: 2

摘要

低电压甚至超低功耗(ULP)技术的发展对紧凑型器件模型精度提出了越来越高的要求。本文提出了一种新的MOSFET动态建模方法，特别适用于低压混合模拟数字电路的仿真。该模型基于终端电荷和导电电流，这些电荷和导电电流是由瞬态电流/电压数据确定的，这些数据可以通过测量或模拟器件轻松获得。

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A consistent dynamic MOSFET model for low-voltage applications

The development towards lower voltages and even ultra-low-power (ULP) technologies makes ever higher demands on compact device model accuracy. We present a new approach to dynamic MOSFET modeling, which is especially suited for the simulation of low-voltage mixed analog digital circuits. The model is based on terminal charges and conductive currents which are determined from transient current/voltage data which can be easily obtained through measurement or simulation of the devices.

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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