离子注入的三维模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865255

J. Lorenz, K. Tietzel, A. Bourenkov, H. Ryssel

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引用次数: 2

摘要

随着先进ULSI器件尺寸的不断缩小和复杂性的不断增加，三维效果对其开发和优化变得越来越重要。因此，在PROMPT项目中，一个欧洲财团开发了一个多维过程模拟软件，能够为三维设备模拟提供适当的输入。PROMPT软件从现有的一维和二维过程模拟器以及新开发的三维模块的结果中编译设备的几何形状和掺杂物轮廓。在这次演讲中，介绍了fhg - ii - b在PROMPT开发的三维离子注入模块的能力。

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Three-dimensional simulation of ion implantation

With shrinking dimensions and growing complexity of advanced ULSI devices three-dimensional effects are becoming more and more important for their development and optimization. For this reason, within the project PROMPT a multidimensional process simulation software capable to provide appropriate input to three-dimensional device simulation has been developed by a European consortium. The PROMPT software compiles the geometry and the dopant profiles of the device from the results of existing one- and two-dimensional process simulators and three-dimensional modules newly developed. Within this presentation, the capabilities of the three-dimensional ion implantation module developed at FhG-IIS-B within PROMPT are being outlined.

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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