纳米电子学——SISPAD的新领域

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865245

T. Sugano

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引用次数: 1

摘要

虽然硅微电子学仍将是电子学的主流，但向纳米电子学的演变将会出现。在纳米电子学中，载流子的类波特性和载流子隧穿的库仑阻塞是两个主要的物理原理，电离掺杂引起的空间电荷的连续介质模型不再有效。基于边界和材料处理的载流子散射的原子水平建模，以及载流子通过势垒和单电子电路隧道的统计和动力学建模将成为纳米电子学SISPAD的一个新领域。

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Nano-electronics-a new field for SISPAD

Although silicon microelectronics will remain in the main stream of electronics, evolution to nanoelectronics will be emerging. In nanoelectronics the wave-like characteristics of carriers and Coulomb blockade of tunneling of carriers are two principal physical principles and the continuum model for space charge due to ionized dopants is no longer valid. Atomic level modeling of carrier-wave scattering from the boundary and materials processing, and statistical and dynamical modeling of tunneling of carriers through a potential barrier, and single electron circuits will be a new field of SISPAD for nanoelectronics.

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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