基于踢出机制的硼在硅中的扩散模拟

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865256

M. Uematsu

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引用次数: 3

摘要

基于启动机制模拟了硼在Si中的扩散分布，考虑了中性硼间隙和带正电的中性自间隙作为主要扩散物质。仅用三个参数就能令人满意地拟合轮廓，每个参数都有明确的物理含义。该研究明确了B扩散的基本参数，有助于开发更广泛应用的扩散模拟器。

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Simulation of boron diffusion in Si based on the kick-out mechanism

B in-diffusion profiles in Si were simulated based on the kick-out mechanism, taking into account neutral boron interstitials and positively charged and neutral self-interstitials as the diffusion species which primarily contribute to the diffusion. The profiles were satisfactorily fitted by just three parameters, each of which has a clear physical meaning. This study clarifies the essential parameters for B diffusion, which helps to develop a more widely applicable diffusion simulator.

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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