{"title":"砷化镓金属-半导体-金属(MSM)光电探测器的光电模拟","authors":"T. Korner, P. D. Yoder, L. Bomholt, W. Fichtner","doi":"10.1109/SISPAD.1996.865267","DOIUrl":null,"url":null,"abstract":"A complete optical-electronical simulation of a GaAs based MSM photodetector is presented. In the modeling, rigorous electromagnetic methods for the light propagation have been combined with particle-based Monte-Carlo electronic device simulation methods.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Optical-electronic simulation of a GaAs metal-semiconductor-metal (MSM) photodetector\",\"authors\":\"T. Korner, P. D. Yoder, L. Bomholt, W. Fichtner\",\"doi\":\"10.1109/SISPAD.1996.865267\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A complete optical-electronical simulation of a GaAs based MSM photodetector is presented. In the modeling, rigorous electromagnetic methods for the light propagation have been combined with particle-based Monte-Carlo electronic device simulation methods.\",\"PeriodicalId\":341161,\"journal\":{\"name\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.1996.865267\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.1996.865267","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical-electronic simulation of a GaAs metal-semiconductor-metal (MSM) photodetector
A complete optical-electronical simulation of a GaAs based MSM photodetector is presented. In the modeling, rigorous electromagnetic methods for the light propagation have been combined with particle-based Monte-Carlo electronic device simulation methods.