Fast step coverage simulation for 3D contact hole with analytical integral

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865282

T. Shinzawa, H. Kato

引用次数: 0

Abstract

We have developed a high speed Al CVD profile simulator for ULSI 3D contact filling using analytical integral for gas phase flux and re-emission flux from contact surface. The analytical integral formulation for 3D circular contact is described in detail. The analytical integral simulator has four times faster simulation speed than that using numerical integral. The simulation results agree well with observed experimental results except for the bottom coverage.

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三维接触孔的解析积分快速步进覆盖仿真

我们利用气相通量和接触面再发射通量的解析积分，开发了用于ULSI三维接触填充的高速Al CVD轮廓模拟器。详细介绍了三维圆接触的解析积分公式。解析积分模拟器的仿真速度是数值积分模拟器的4倍。模拟结果与实测结果吻合较好，但存在底部覆盖范围不一致的问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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