发布求助
文献互助 智能选刊 最新文献

1997 IEEE Hong Kong Proceedings Electron Devices Meeting最新文献

筛选
英文 中文
Microwave-frequency operation of resonant tunneling high electron mobility transistors 共振隧穿高电子迁移率晶体管的微波频率工作
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642343
K.J. Chen
{"title":"Microwave-frequency operation of resonant tunneling high electron mobility transistors","authors":"K.J. Chen","doi":"10.1109/HKEDM.1997.642343","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642343","url":null,"abstract":"Microwave-frequency characteristics of a highly functional InP-based resonant-tunneling high electron mobility transistor (RTHELT) are reported in this paper. Based on small-signal S-parameter measurement, a maximum current gain cutoff frequency f/sub T/ of 28.6 GHz and a maximum power gain cutoff frequency f/sub max/ of 90 GHz were obtained for an RTHEMT with a 0.7-/spl mu/m gate length. Large-signal characteristics are also reported, showing the potential of RTHEMTs for frequency multiplier applications featuring high order harmonics multiplication with high conversion efficiency.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115505700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new threshold voltage model for deep-submicron MOSFET's with nonuniform substrate dopings 基于非均匀衬底掺杂的深亚微米MOSFET阈值电压新模型
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642326
Wen-liang Zhang, Zhi-lian Yang
{"title":"A new threshold voltage model for deep-submicron MOSFET's with nonuniform substrate dopings","authors":"Wen-liang Zhang, Zhi-lian Yang","doi":"10.1109/HKEDM.1997.642326","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642326","url":null,"abstract":"A simple but accurate threshold voltage model for deep-submicron MOSFET's with nonuniform dopings is described in this paper. A simplified quasi-delta substrate doping profile is used to approximate the nonuniformity. We apply a hyperbola function to avoid the discontinuous problem at the boundary between different doping regions. By adjusting the parameter /spl delta/, the actual gradual doping profile can be obtained. The model developed is in good agreement with two-dimensional numerical simulation.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"321 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122824453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Structural and photoelectric studies on double barrier quantum well infrared detectors 双势垒量子阱红外探测器的结构与光电研究
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642344
W. G. Wu, D. Jiang, L. Cui, C. Song, Y. Zhuang
{"title":"Structural and photoelectric studies on double barrier quantum well infrared detectors","authors":"W. G. Wu, D. Jiang, L. Cui, C. Song, Y. Zhuang","doi":"10.1109/HKEDM.1997.642344","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642344","url":null,"abstract":"GaAs-AlAs-GaAlAs double barrier quantum well (DBQW) structures are employed for making the 3-5 /spl mu/m photovoltaic infrared (IR) detectors with a peak detectivity of 5/spl times/10/sup 11/ cmHz/sup 1/2 //W at 80 K. Double crystal X-ray diffraction is combined with synchrotron radiation X-ray analysis to determine the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spectra of the DBQW sample and the spectral response of the IR photocurrent of the devices are measured directly by the edge excitation method, providing information about the spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129631027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A high density IC compatible microtransducer/diaphragm design on micro-cavity SOI technology 基于微腔SOI技术的高密度IC兼容微换能器/膜片设计
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642351
M.M.-O. Lee, Yang-Ho Moon
{"title":"A high density IC compatible microtransducer/diaphragm design on micro-cavity SOI technology","authors":"M.M.-O. Lee, Yang-Ho Moon","doi":"10.1109/HKEDM.1997.642351","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642351","url":null,"abstract":"This paper demonstrates the cross-functional results for stress analyses (targeting 5 /spl mu/m deflection and 1000 MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI (Silicon-On-Insulator) structures, and for showing the most feasible deflection and small stress at various ambient pressure from double SOI based sensor. The SOI micro-cavity formed the sensors would be promising to integrate with current CMOS drivers onto monolithic chip in the future.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134364059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Device and technology challenges for 0.1 /spl mu/m CMOS 0.1 /spl μ m CMOS的器件和技术挑战
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.641997
S.S. Wong
{"title":"Device and technology challenges for 0.1 /spl mu/m CMOS","authors":"S.S. Wong","doi":"10.1109/HKEDM.1997.641997","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.641997","url":null,"abstract":"Summary form only given. The integrated circuit industry is poised to introduce 0.25 /spl mu/m products before the end of this year, and is projected to deliver 0.1 /spl mu/M process in less than 10 years. We will review the challenges ahead and focus on the research opportunities in device and process technology.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131008445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Merged technology on MEMS MEMS上的融合技术
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642349
M.M.-O. Lee
{"title":"Merged technology on MEMS","authors":"M.M.-O. Lee","doi":"10.1109/HKEDM.1997.642349","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642349","url":null,"abstract":"This study presents briefly the review for stress analyses for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from SOI (Silicon On Insulator) structures. This paper mainly presents the trends on current smart sensor for future MEMS chip and also demonstrates a way of integrating with calibration, gain stage and microcontroller unit plus high current/high voltage CMOS drivers onto three chip module, two chip module and monolithic chip for future automobile, industrial and medical MEMS products.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122148662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Mechanism of flicker noise in a-Si:H thin films a-Si:H薄膜中闪烁噪声的机理
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642324
W. Ho, C. Surya
{"title":"Mechanism of flicker noise in a-Si:H thin films","authors":"W. Ho, C. Surya","doi":"10.1109/HKEDM.1997.642324","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642324","url":null,"abstract":"Flicker noise in n-type hydrogenated amorphous silicon is studied from room temperature to about 420 K. The device is first annealed at 450 K and subsequently cooled at rates of 0.5 K/s or 0.02 K/s. The temperature variations of both the voltage noise power spectra and the conductivity of the material exhibit strong dependencies on the cooling rate of the device. The current dependence of the voltage noise power spectra is found to deviate from the power law indicating that the noise arises from a non-linear system. The voltage noise power spectra is found to vary as R/sup P/ and p is dependent on the temperature and the cooling process of the device. Our experimental data provides strong evidence that the flicker noise originates from hydrogen motion within the material. The process appears to cause fluctuations in the device conductance by modulating the percolation path of the carriers.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"407 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126685100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal modeling of micro-hotplates for integrated sensor applications 用于集成传感器应用的微热板热建模
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642353
Darwin T. W Wong, P. Chan, L. Sheng, J. Sin
{"title":"Thermal modeling of micro-hotplates for integrated sensor applications","authors":"Darwin T. W Wong, P. Chan, L. Sheng, J. Sin","doi":"10.1109/HKEDM.1997.642353","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642353","url":null,"abstract":"Micromachined micro-hotplate (MHP) is used in integrated gas sensors to heat SnO/sub 2/ sensing film to the high operating temperature with milli-watts of power. This paper reports a detailed thermal modeling study of the MHP using 3-D finite element analysis. Three MHP structures were analyzed. Their thermal characteristics were compared.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126832261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET 关态n-MOSFET栅极诱发漏极的机理分析
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642340
L. Huang, P. Lai, J. Xu, Y. Cheng
{"title":"Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET","authors":"L. Huang, P. Lai, J. Xu, Y. Cheng","doi":"10.1109/HKEDM.1997.642340","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642340","url":null,"abstract":"An analytical expression for gate-induced drain leakage (GIDL) current based on indirect tunneling theory is described, which can be used for both band-to-band and band-trap-band tunnelings. The voltage and temperature dependence of GIDL and hot-carrier-induced drain leakage are investigated. Experiment shows that interface traps participate in the conduction of GIDL and indirect band-trap-band tunneling could be a major mechanism responsible for GIDL.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126499441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
Effects of low-energy backsurface gettering on the properties of low-frequency excess noise in NH/sub 3/ and N/sub 2/O nitrided MOSFETs 低能量背表面吸波对NH/sub /和N/sub /O氮化mosfet低频过量噪声的影响
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642341
W. Wang, C. Surya, P. Lai
{"title":"Effects of low-energy backsurface gettering on the properties of low-frequency excess noise in NH/sub 3/ and N/sub 2/O nitrided MOSFETs","authors":"W. Wang, C. Surya, P. Lai","doi":"10.1109/HKEDM.1997.642341","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642341","url":null,"abstract":"Nitridation of the gate dielectric for n-channel Si MOSFETs is carried out by rapid thermal annealing in either NH/sub 3/ or N/sub 2/O followed by low-energy Ar/sup +/ gettering. The effects on flicker noise are characterized over a wide range of temperatures and biases. The gettering time ranged from from 10 to 40 minutes for NH/sub 3/ nitrided devices and 10 and 20 minutes for N/sub 2/O nitrided devices. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that, for both types of devices, flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigation of the temperature dependence of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO/sub 2/ interface. Backsurface gettering results in a modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO/sub 2/ interface.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121854126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信