{"title":"MEMS上的融合技术","authors":"M.M.-O. Lee","doi":"10.1109/HKEDM.1997.642349","DOIUrl":null,"url":null,"abstract":"This study presents briefly the review for stress analyses for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from SOI (Silicon On Insulator) structures. This paper mainly presents the trends on current smart sensor for future MEMS chip and also demonstrates a way of integrating with calibration, gain stage and microcontroller unit plus high current/high voltage CMOS drivers onto three chip module, two chip module and monolithic chip for future automobile, industrial and medical MEMS products.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Merged technology on MEMS\",\"authors\":\"M.M.-O. Lee\",\"doi\":\"10.1109/HKEDM.1997.642349\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study presents briefly the review for stress analyses for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from SOI (Silicon On Insulator) structures. This paper mainly presents the trends on current smart sensor for future MEMS chip and also demonstrates a way of integrating with calibration, gain stage and microcontroller unit plus high current/high voltage CMOS drivers onto three chip module, two chip module and monolithic chip for future automobile, industrial and medical MEMS products.\",\"PeriodicalId\":262767,\"journal\":{\"name\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1997.642349\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1997.642349","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This study presents briefly the review for stress analyses for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from SOI (Silicon On Insulator) structures. This paper mainly presents the trends on current smart sensor for future MEMS chip and also demonstrates a way of integrating with calibration, gain stage and microcontroller unit plus high current/high voltage CMOS drivers onto three chip module, two chip module and monolithic chip for future automobile, industrial and medical MEMS products.