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1997 IEEE Hong Kong Proceedings Electron Devices Meeting最新文献

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New theory of the thermal oxidation of silicon 硅热氧化的新理论
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642334
G.V. Gadiyak
{"title":"New theory of the thermal oxidation of silicon","authors":"G.V. Gadiyak","doi":"10.1109/HKEDM.1997.642334","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642334","url":null,"abstract":"The growth kinetics of SiO/sub 2/ films on silicon is developed. A simple model of oxidation takes into account the reactions occurring in bulk and at the two interfaces of the oxide layer as well as the diffusion process for atomic oxygen and diffusion approximation for calculation of the coefficients of kinetic reactions. The relationship is shown to be in excellent agreement with oxidation data obtained over a range of temperature (800/spl deg/-1200/spl deg/C), and oxide thickness (6-400 /spl Aring/) for O/sub 2/ and N/sub 2/O ambient oxidation.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"158 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113949331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Extraction of the threshold voltage of MOSFETs: an overview mosfet阈值电压的提取:概述
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642325
J. Liou, A. Ortiz-Condez, F. Sanchez
{"title":"Extraction of the threshold voltage of MOSFETs: an overview","authors":"J. Liou, A. Ortiz-Condez, F. Sanchez","doi":"10.1109/HKEDM.1997.642325","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642325","url":null,"abstract":"The threshold voltage is a key parameter in the silicon MOSFET design and operation. This paper gives an overview of the existing methods for extracting the threshold voltage of MOSFETs. In addition, a new extraction method is proposed and developed. Comparisons of the results extracted from the various methods based on device simulation, circuit simulation, and measurements are also presented.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128317835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
n/sup +//p ultra-shallow junction formation with plasma immersion ion implantation 等离子体浸没离子注入形成N /sup +//p超浅结
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642287
B.L. Yang, E. Jones, N. Cheung, J. Shao, H. Wong, Y. Cheng
{"title":"n/sup +//p ultra-shallow junction formation with plasma immersion ion implantation","authors":"B.L. Yang, E. Jones, N. Cheung, J. Shao, H. Wong, Y. Cheng","doi":"10.1109/HKEDM.1997.642287","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642287","url":null,"abstract":"n/sup +//p ultra-shallow junction formed by PH/sub 3/ Plasma Immersion Ion Implantation (PIII) have been studied. Diodes with good electrical characteristics have been obtained and mechanisms of unusual electrical characteristics for some diodes are discussed and analyzed in this paper.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125185414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A dynamic substrate bias inverter for low voltage applications 用于低压应用的动态基板偏置逆变器
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642318
C. Lo, C. Chan
{"title":"A dynamic substrate bias inverter for low voltage applications","authors":"C. Lo, C. Chan","doi":"10.1109/HKEDM.1997.642318","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642318","url":null,"abstract":"A new type of inverter for low voltage and low power applications is proposed. It is designed so that the substrate bias voltage can be dynamically adjusted. The bulk is biased positively in the active mode to decrease the threshold voltage Vth and thus provide more output drive, while in the standby mode the substrate bias is not applied to maintain a high Vth, therefore reduce the leakage current. Comparison of performance between the proposed dynamic threshold inverter DTINV and conventional CMOS inverter are made.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125443945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface electronic structure of light-emitting porous polycrystalline silicon thin films 发光多孔多晶硅薄膜的表面电子结构
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642350
P. Han, H. Wong, M. Poon
{"title":"Surface electronic structure of light-emitting porous polycrystalline silicon thin films","authors":"P. Han, H. Wong, M. Poon","doi":"10.1109/HKEDM.1997.642350","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642350","url":null,"abstract":"Surface electronic structure of light-emitting porous polycrystalline silicon (PPS) is studied using X-ray photoelectron spectroscopy (XPS). We find that the PPS films with strong photoluminescence effect can only be observed in thin films with trace amounts of silicon nanoclusters and the luminescence can be enhanced remarkably with proper passivation of the PPS surface.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132983403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical model and computer simulation results of enhanced diffusion of high-temperature implanted aluminum in silicon carbide 高温注入铝在碳化硅中增强扩散的理论模型及计算机模拟结果
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642329
G. Gadiyak
{"title":"Theoretical model and computer simulation results of enhanced diffusion of high-temperature implanted aluminum in silicon carbide","authors":"G. Gadiyak","doi":"10.1109/HKEDM.1997.642329","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642329","url":null,"abstract":"Wide application of silicon carbide (SiC) films in microelectronics devices makes especially important predictions of the doping profiles during and/or after thermal treatment. A macroscopic kinetic model of enhanced diffusion of aluminum in SiC films during ion bombardment at high temperature has been considered. The set of equations describing the kinetic model takes into account generation of Si and C dangling bonds during bombardment, formation of C-Al and Si-Al bonds, migration of the mobile species (aluminum) to the surface, their reactions with Si and C dangling bonds as well as their evolution from the film. Numerical simulation of the equations has allowed the total concentration profile of Al implanted into SiC to be determined, the concentration profile of Al atoms on C and Si dangling bonds, the concentration profile of mobile and immobile Al atoms. The calculations were carried out for Al implanted with 40 kev energy and an ion current density of 20 /spl mu/A/cm/sup 2/ to a dose 2/spl times/10(16) cm/sup -2/ at 1800/spl deg/C. The calculations show that the Al content in SiC did not exceed 40%. We obtained a good agreement with experimental profile of Al.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133609696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Tilt angle effect on optimizing HALO PMOS and NMOS performance 倾斜角度对HALO PMOS和NMOS性能优化的影响
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642301
Jiong-Guang Su, Chi-Tsung Huang, Shyh-Chyi Wong, Chang-Ching Cheng, Chih-Chiang Wang, S. Huang-Lu, B. Tsui
{"title":"Tilt angle effect on optimizing HALO PMOS and NMOS performance","authors":"Jiong-Guang Su, Chi-Tsung Huang, Shyh-Chyi Wong, Chang-Ching Cheng, Chih-Chiang Wang, S. Huang-Lu, B. Tsui","doi":"10.1109/HKEDM.1997.642301","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642301","url":null,"abstract":"Deep submicrometer MOS devices often need special structures to optimize their performance. The HALO structure, or pocket implant, is usually adopted for PMOS to reduce off-state leakage current and enhance on-state drive current. This paper studies the tilt angle effect of HALO implant on device performance. It is found that device with higher tilt angle gives reduced body effect and increased source resistance as compared to those with low tilt angle, and the effect of resistance and body effect compensates each other, resulting equivalent DC performance for different tilt angle. We suggest that based on this equivalence of DC performance, high tilt angle should be adopted for HALO devices due to their lower junction capacitance.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122798067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Thermal stability of nickel silicide films in submicron p-type polysilicon lines 亚微米p型多晶硅线中硅化镍薄膜的热稳定性
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642330
M. Poon, F. Deng, H. Wong, M. Chan, J. Sin, S. Lau, C. N. Ho, P. Han
{"title":"Thermal stability of nickel silicide films in submicron p-type polysilicon lines","authors":"M. Poon, F. Deng, H. Wong, M. Chan, J. Sin, S. Lau, C. N. Ho, P. Han","doi":"10.1109/HKEDM.1997.642330","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642330","url":null,"abstract":"In this work, we found that very low resistivity NiSi can be thermally stable and is independent of linewidth for deep submicron p-type poly-Si lines up to 700-750/spl deg/C for 0.5 and 1 hr annealing, and for linewidths as narrow as 0.2-0.1 /spl mu/m. It widens the thermal budget windows and process tolerance for NiSi and further suggests that NiSi is a very promising contact material candidate for future ULSI devices.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123398689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The integration of SnO/sub 2/ thin-film onto micro-hotplate for gas sensor applications 将SnO/ sub2 /薄膜集成到气体传感器应用的微热板上
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642352
L. Sheng, P. Chan, J. Sin
{"title":"The integration of SnO/sub 2/ thin-film onto micro-hotplate for gas sensor applications","authors":"L. Sheng, P. Chan, J. Sin","doi":"10.1109/HKEDM.1997.642352","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642352","url":null,"abstract":"Anisotropic silicon etching techniques have been widely used in various microsensors to create thermally isolated structures or micro-hotplate (MHP). EDP (Ethylene-diamine-pyrocatechol) is one of the most commonly used anisotropic etchants because of its high selectivity of silicon compared to masking materials such as silicon dioxide. To integrate sensor arrays of various types of SnO/sub 2/ thin-film sensors on the microstructure, we need to find a way to photolithographically pattern the SnO/sub 2/ thin-film. In this paper we report results from such experiments.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126460513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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