{"title":"发光多孔多晶硅薄膜的表面电子结构","authors":"P. Han, H. Wong, M. Poon","doi":"10.1109/HKEDM.1997.642350","DOIUrl":null,"url":null,"abstract":"Surface electronic structure of light-emitting porous polycrystalline silicon (PPS) is studied using X-ray photoelectron spectroscopy (XPS). We find that the PPS films with strong photoluminescence effect can only be observed in thin films with trace amounts of silicon nanoclusters and the luminescence can be enhanced remarkably with proper passivation of the PPS surface.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surface electronic structure of light-emitting porous polycrystalline silicon thin films\",\"authors\":\"P. Han, H. Wong, M. Poon\",\"doi\":\"10.1109/HKEDM.1997.642350\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Surface electronic structure of light-emitting porous polycrystalline silicon (PPS) is studied using X-ray photoelectron spectroscopy (XPS). We find that the PPS films with strong photoluminescence effect can only be observed in thin films with trace amounts of silicon nanoclusters and the luminescence can be enhanced remarkably with proper passivation of the PPS surface.\",\"PeriodicalId\":262767,\"journal\":{\"name\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1997.642350\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1997.642350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Surface electronic structure of light-emitting porous polycrystalline silicon thin films
Surface electronic structure of light-emitting porous polycrystalline silicon (PPS) is studied using X-ray photoelectron spectroscopy (XPS). We find that the PPS films with strong photoluminescence effect can only be observed in thin films with trace amounts of silicon nanoclusters and the luminescence can be enhanced remarkably with proper passivation of the PPS surface.