Extraction of the threshold voltage of MOSFETs: an overview

1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI:10.1109/HKEDM.1997.642325

J. Liou, A. Ortiz-Condez, F. Sanchez

引用次数: 21

Abstract

The threshold voltage is a key parameter in the silicon MOSFET design and operation. This paper gives an overview of the existing methods for extracting the threshold voltage of MOSFETs. In addition, a new extraction method is proposed and developed. Comparisons of the results extracted from the various methods based on device simulation, circuit simulation, and measurements are also presented.

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mosfet阈值电压的提取:概述

阈值电压是硅MOSFET设计和工作中的一个关键参数。本文概述了提取mosfet阈值电压的现有方法。此外，提出并发展了一种新的提取方法。对基于器件仿真、电路仿真和测量的各种方法提取的结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

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