n/sup +//p ultra-shallow junction formation with plasma immersion ion implantation

1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI:10.1109/HKEDM.1997.642287

B.L. Yang, E. Jones, N. Cheung, J. Shao, H. Wong, Y. Cheng

引用次数: 0

Abstract

n/sup +//p ultra-shallow junction formed by PH/sub 3/ Plasma Immersion Ion Implantation (PIII) have been studied. Diodes with good electrical characteristics have been obtained and mechanisms of unusual electrical characteristics for some diodes are discussed and analyzed in this paper.

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等离子体浸没离子注入形成N /sup +//p超浅结

研究了PH/sub - 3/等离子体浸入离子注入(PIII)形成的n/sup +//p超浅结。获得了具有良好电特性的二极管，并对某些二极管异常电特性的机理进行了讨论和分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

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