{"title":"硅热氧化的新理论","authors":"G.V. Gadiyak","doi":"10.1109/HKEDM.1997.642334","DOIUrl":null,"url":null,"abstract":"The growth kinetics of SiO/sub 2/ films on silicon is developed. A simple model of oxidation takes into account the reactions occurring in bulk and at the two interfaces of the oxide layer as well as the diffusion process for atomic oxygen and diffusion approximation for calculation of the coefficients of kinetic reactions. The relationship is shown to be in excellent agreement with oxidation data obtained over a range of temperature (800/spl deg/-1200/spl deg/C), and oxide thickness (6-400 /spl Aring/) for O/sub 2/ and N/sub 2/O ambient oxidation.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"158 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"New theory of the thermal oxidation of silicon\",\"authors\":\"G.V. Gadiyak\",\"doi\":\"10.1109/HKEDM.1997.642334\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The growth kinetics of SiO/sub 2/ films on silicon is developed. A simple model of oxidation takes into account the reactions occurring in bulk and at the two interfaces of the oxide layer as well as the diffusion process for atomic oxygen and diffusion approximation for calculation of the coefficients of kinetic reactions. The relationship is shown to be in excellent agreement with oxidation data obtained over a range of temperature (800/spl deg/-1200/spl deg/C), and oxide thickness (6-400 /spl Aring/) for O/sub 2/ and N/sub 2/O ambient oxidation.\",\"PeriodicalId\":262767,\"journal\":{\"name\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"volume\":\"158 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1997.642334\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1997.642334","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The growth kinetics of SiO/sub 2/ films on silicon is developed. A simple model of oxidation takes into account the reactions occurring in bulk and at the two interfaces of the oxide layer as well as the diffusion process for atomic oxygen and diffusion approximation for calculation of the coefficients of kinetic reactions. The relationship is shown to be in excellent agreement with oxidation data obtained over a range of temperature (800/spl deg/-1200/spl deg/C), and oxide thickness (6-400 /spl Aring/) for O/sub 2/ and N/sub 2/O ambient oxidation.
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