亚微米p型多晶硅线中硅化镍薄膜的热稳定性

1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI:10.1109/HKEDM.1997.642330

M. Poon, F. Deng, H. Wong, M. Chan, J. Sin, S. Lau, C. N. Ho, P. Han

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引用次数: 1

摘要

在这项工作中，我们发现极低电阻率的NiSi可以是热稳定的，并且与线宽无关，对于深亚微米p型多晶硅线，退火0.5和1小时可达700-750/spl度/C，线宽窄至0.2-0.1 /spl mu/m。它扩大了NiSi的热预算窗口和工艺公差，并进一步表明NiSi是未来ULSI器件非常有前途的接触材料候选材料。

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Thermal stability of nickel silicide films in submicron p-type polysilicon lines

In this work, we found that very low resistivity NiSi can be thermally stable and is independent of linewidth for deep submicron p-type poly-Si lines up to 700-750/spl deg/C for 0.5 and 1 hr annealing, and for linewidths as narrow as 0.2-0.1 /spl mu/m. It widens the thermal budget windows and process tolerance for NiSi and further suggests that NiSi is a very promising contact material candidate for future ULSI devices.

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1997 IEEE Hong Kong Proceedings Electron Devices Meeting

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