{"title":"关态n-MOSFET栅极诱发漏极的机理分析","authors":"L. Huang, P. Lai, J. Xu, Y. Cheng","doi":"10.1109/HKEDM.1997.642340","DOIUrl":null,"url":null,"abstract":"An analytical expression for gate-induced drain leakage (GIDL) current based on indirect tunneling theory is described, which can be used for both band-to-band and band-trap-band tunnelings. The voltage and temperature dependence of GIDL and hot-carrier-induced drain leakage are investigated. Experiment shows that interface traps participate in the conduction of GIDL and indirect band-trap-band tunneling could be a major mechanism responsible for GIDL.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"31","resultStr":"{\"title\":\"Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET\",\"authors\":\"L. Huang, P. Lai, J. Xu, Y. Cheng\",\"doi\":\"10.1109/HKEDM.1997.642340\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analytical expression for gate-induced drain leakage (GIDL) current based on indirect tunneling theory is described, which can be used for both band-to-band and band-trap-band tunnelings. The voltage and temperature dependence of GIDL and hot-carrier-induced drain leakage are investigated. Experiment shows that interface traps participate in the conduction of GIDL and indirect band-trap-band tunneling could be a major mechanism responsible for GIDL.\",\"PeriodicalId\":262767,\"journal\":{\"name\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"31\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1997.642340\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1997.642340","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET
An analytical expression for gate-induced drain leakage (GIDL) current based on indirect tunneling theory is described, which can be used for both band-to-band and band-trap-band tunnelings. The voltage and temperature dependence of GIDL and hot-carrier-induced drain leakage are investigated. Experiment shows that interface traps participate in the conduction of GIDL and indirect band-trap-band tunneling could be a major mechanism responsible for GIDL.