关态n-MOSFET栅极诱发漏极的机理分析

L. Huang, P. Lai, J. Xu, Y. Cheng
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引用次数: 31

摘要

基于间接隧穿理论,给出了栅极漏极电流的解析表达式,该表达式既适用于带对带隧穿,也适用于带阱-带隧穿。研究了GIDL的电压和温度依赖性以及热载子引起的漏极泄漏。实验表明,界面陷阱参与了GIDL的传导,间接带陷阱-带隧道可能是导致GIDL的主要机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET
An analytical expression for gate-induced drain leakage (GIDL) current based on indirect tunneling theory is described, which can be used for both band-to-band and band-trap-band tunnelings. The voltage and temperature dependence of GIDL and hot-carrier-induced drain leakage are investigated. Experiment shows that interface traps participate in the conduction of GIDL and indirect band-trap-band tunneling could be a major mechanism responsible for GIDL.
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