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1997 IEEE Hong Kong Proceedings Electron Devices Meeting最新文献

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Network analysis approach to numerical a-Si TFT simulation a-Si TFT数值模拟的网络分析方法
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642327
Y. Tsai, T. Ke
{"title":"Network analysis approach to numerical a-Si TFT simulation","authors":"Y. Tsai, T. Ke","doi":"10.1109/HKEDM.1997.642327","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642327","url":null,"abstract":"This paper presents a network model for a-Si TFT two-dimensional numerical simulation. The Poisson's and continuity equations are formulated into equivalent circuits so circuit elements such as voltage sources, resistors and capacitances can be used to implement the equations. Numerical simulation is a powerful tool for device research, but sometimes it is hard to implement. This method not only provides the availability to simulate semiconductor devices numerically by using circuit simulator, but also reduce the complexity of numerical simulation. In addition, using this method makes mixed-mode simulation between semiconductor device and external circuits: very easy. The simulation results which includes I-V, C-V and transient characteristics are all reasonable and satisfactory.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"760 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117011155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Back-gate bias effect in the SOI gate controlled hybrid transistor (GCHT)
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642355
Ru Huang, Xing Zhang, Yue Xi, Y. Li, Yangyuan Wang
{"title":"Back-gate bias effect in the SOI gate controlled hybrid transistor (GCHT)","authors":"Ru Huang, Xing Zhang, Yue Xi, Y. Li, Yangyuan Wang","doi":"10.1109/HKEDM.1997.642355","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642355","url":null,"abstract":"Back-gate bias effect in SOI gate controlled hybrid transistor is discussed. Experimental results show the transconductance enhancement caused by the back-gate bias. Furthermore, the back-gate effect is alleviated in GCHT compared with conventional MOSFET.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124932801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of wavelength tuning and power bistability in a 3-section DFB laser 三段DFB激光器波长调谐与功率双稳性研究
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642346
H.W. Ho, Zhuang Wanru, Hu Xiongwei, K. Chan
{"title":"Investigation of wavelength tuning and power bistability in a 3-section DFB laser","authors":"H.W. Ho, Zhuang Wanru, Hu Xiongwei, K. Chan","doi":"10.1109/HKEDM.1997.642346","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642346","url":null,"abstract":"Wavelength tunability and optical power-bistability are demonstrated in the 3-electrode multi-quantum well distributed feedback laser by different schemes of current injection. A tuning curve different from that of a 2-section DFB laser is also observed.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128177922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasma doping for ultra-shallow junctions 超浅结的等离子体掺杂
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642026
C. Chan, S. Qin
{"title":"Plasma doping for ultra-shallow junctions","authors":"C. Chan, S. Qin","doi":"10.1109/HKEDM.1997.642026","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642026","url":null,"abstract":"Plasma doping (PD) processes utilizing PH/sub 3//He and B/sub 2/H/sub 4//He plasmas to fabricate CMOS devices are presented. The applications of PD in ultra-shallow junctions are discussed. Low contamination levels and good device characteristics were achieved.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124524287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Evidence of oxide charge trapping saturation induced by rapid thermal annealing 快速热退火诱导氧化电荷俘获饱和的证据
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642336
M.S. Huang, S. Wong, C.Y. Sun, L.M. Liu
{"title":"Evidence of oxide charge trapping saturation induced by rapid thermal annealing","authors":"M.S. Huang, S. Wong, C.Y. Sun, L.M. Liu","doi":"10.1109/HKEDM.1997.642336","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642336","url":null,"abstract":"In this paper, we investigate the impact of Rapid Thermal Annealing temperature on hot electron reliability by using DC stress measurement and two dimensional device simulation. We find that the substrate current of sample with Rapid Thermal Annealing temperature higher than 900/spl deg/C degrades with time, while substrate current of sample with 875/spl deg/C shows an anomalous variation, that is, two section saturation phenomenon. We propose the physical explanations about two section saturation phenomenon. Finally, we also verify other model to find out the characteristic of gate oxide. We find that the sample with higher Rapid Thermal Annealing temperature has better oxide quality to avoid hot electron injection.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124968466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Grain-boundary resistivity in barium titanate ceramic positive temperature coefficient sensors 钛酸钡陶瓷正温度系数传感器的晶界电阻率
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642354
H. Wong, P. Han, M. Poon, Y.Y. Chen, X.R. Zheng
{"title":"Grain-boundary resistivity in barium titanate ceramic positive temperature coefficient sensors","authors":"H. Wong, P. Han, M. Poon, Y.Y. Chen, X.R. Zheng","doi":"10.1109/HKEDM.1997.642354","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642354","url":null,"abstract":"Several positive temperature coefficient resistors (PTCR's) are prepared using commercially available BaTiO/sub 3/ powders with different additives (Y, Mn, Nb, AST). We found that the different additives will result in different grain sizes, grain surface and porosity. However, the temperature-dependent resistivities of these samples do not have significant difference. A new model is proposed to explain this discrepancy and the three-segment characteristics in the PTCR.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131668493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A comparative study of p-type diffusion in III-V compound semiconductors III-V型化合物半导体中p型扩散的比较研究
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642347
T. Weng
{"title":"A comparative study of p-type diffusion in III-V compound semiconductors","authors":"T. Weng","doi":"10.1109/HKEDM.1997.642347","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642347","url":null,"abstract":"In this paper, the different behavior of zinc diffusion in GaAs and InP is described. The diffusion technique used in this study was a semi-sealed quartz bottle containing diffusion charges and GaAs or InP wafers. The basic requirement for zinc diffusion in these materials is to provide an overpressure ambient so that decomposition at the diffusion temperature can be avoided. For InP, a small amount of InP powder along with zinc in the diffusion charge was required in order to avoid the decomposition at the diffusion temperature of about 600/spl deg/C. For GaAs, however, no GaAs powder was needed in the diffusion charge. Only pure zinc was required for producing heavily doped P-layer at the diffusion temperature of about 500/spl deg/C.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130379582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Suppression of reverse short channel effect by nitrogen implantation and its implications on nitrogen as a dopant species for applications in 0.25 /spl mu/m technology 氮注入抑制反向短通道效应及其对0.25 /spl mu/m技术中氮掺杂的影响
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642332
T.K. Lee, P.C. Liu, C. H. Gan, Y.Q. Zhang, Y. Nga
{"title":"Suppression of reverse short channel effect by nitrogen implantation and its implications on nitrogen as a dopant species for applications in 0.25 /spl mu/m technology","authors":"T.K. Lee, P.C. Liu, C. H. Gan, Y.Q. Zhang, Y. Nga","doi":"10.1109/HKEDM.1997.642332","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642332","url":null,"abstract":"Nitrogen implantation into the channel region was used for the reduction of the \"Reverse Short Channel Effect(RSCE)\". This approach was found to be very effective in reducing the RSCE without adverse effects on the short channel behavior. The reduction of the RSCE is believed to be due to the implanted nitrogen ions. These implanted nitrogen ions retards the redistribution of the channel boron concentration, which is believed to be the cause of the RSCE. Threshold voltage shifts were observed in both n- and p-ch MOSFETs. We propose that these threshold voltage shifts are due to the partial activation of the nitrogen atoms that have taken up substitutional sites in the silicon lattice and thus behave as a dopant species for silicon.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120994835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Industrial synthesis of PECVD silicon nitride passivation film 工业合成PECVD氮化硅钝化膜
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642331
Y. Tang
{"title":"Industrial synthesis of PECVD silicon nitride passivation film","authors":"Y. Tang","doi":"10.1109/HKEDM.1997.642331","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642331","url":null,"abstract":"Plasma enhancement chemical vapour deposition (PECVD) silicon nitride can grow on alloying device at low temperature. So it can be used as passivation film on devices. The type DD-P250 deposition equipment used in several factories is a special purpose one for PECVD silicon nitride deposition. In this paper the author study various deposition parameters affecting thin film properties with the equipment used in manufacturing line. The optimum ranges of various deposition parameters and the conditions of depositing high quality silicon nitride passivation film are report. A new quantitative explanation is given in this paper on index of refraction vs. velocity of growing.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114963370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon 钴和镍硅化物在非晶硅和晶体硅中的热稳定性
1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI: 10.1109/HKEDM.1997.642333
M. Poon, F. Deng, H. Wong, M. Wong, J. Sin, S. Lan, C. Ho, P. Han
{"title":"Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon","authors":"M. Poon, F. Deng, H. Wong, M. Wong, J. Sin, S. Lan, C. Ho, P. Han","doi":"10.1109/HKEDM.1997.642333","DOIUrl":"https://doi.org/10.1109/HKEDM.1997.642333","url":null,"abstract":"Metal silicides have been widely used in microelectronic industries, especially as contact material to reduce the series resistance of source, drain and gate regions in MOSFETs. Among all silicides, cobalt-disilicide (CoSi/sub 2/) and nickel-monosilicide (NiSi) have been demonstrated to be two of the most promising silicide materials for future ULSI, thin film transistor (TFT) and novel devices. They have the advantages of having the lowest resistivities (/spl sim/14 /spl mu/ohm-cm), good thermal stability (up to 700-900/spl deg/C), low formation temperature (/spl sim/400-600 /spl deg/C) and little or no resistivity degradation on narrow lines/gates. Moreover, for CoSi/sub 2/, it can have low film stress (lattice mismatch with silicon (Si) is only 1.2%), less lateral gate-source/drain silicide overgrowth, good resistance to HF and plasma etching, and do not react with oxide below 900/spl deg/C. For NiSi, it has the advantages of less Si consumption, no reaction with N/sub 2/ and a simple single step annealing. This paper aims to provide a first study to explore and compare the thermal stability and process windows of NiSi and CoSi/sub 2/ in amorphous Si (a-Si) and single-crystalline Si (c-Si) substrates after 30 minutes long time annealing.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114353799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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