{"title":"超浅结的等离子体掺杂","authors":"C. Chan, S. Qin","doi":"10.1109/HKEDM.1997.642026","DOIUrl":null,"url":null,"abstract":"Plasma doping (PD) processes utilizing PH/sub 3//He and B/sub 2/H/sub 4//He plasmas to fabricate CMOS devices are presented. The applications of PD in ultra-shallow junctions are discussed. Low contamination levels and good device characteristics were achieved.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Plasma doping for ultra-shallow junctions\",\"authors\":\"C. Chan, S. Qin\",\"doi\":\"10.1109/HKEDM.1997.642026\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Plasma doping (PD) processes utilizing PH/sub 3//He and B/sub 2/H/sub 4//He plasmas to fabricate CMOS devices are presented. The applications of PD in ultra-shallow junctions are discussed. Low contamination levels and good device characteristics were achieved.\",\"PeriodicalId\":262767,\"journal\":{\"name\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1997.642026\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1997.642026","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Plasma doping (PD) processes utilizing PH/sub 3//He and B/sub 2/H/sub 4//He plasmas to fabricate CMOS devices are presented. The applications of PD in ultra-shallow junctions are discussed. Low contamination levels and good device characteristics were achieved.
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