{"title":"工业合成PECVD氮化硅钝化膜","authors":"Y. Tang","doi":"10.1109/HKEDM.1997.642331","DOIUrl":null,"url":null,"abstract":"Plasma enhancement chemical vapour deposition (PECVD) silicon nitride can grow on alloying device at low temperature. So it can be used as passivation film on devices. The type DD-P250 deposition equipment used in several factories is a special purpose one for PECVD silicon nitride deposition. In this paper the author study various deposition parameters affecting thin film properties with the equipment used in manufacturing line. The optimum ranges of various deposition parameters and the conditions of depositing high quality silicon nitride passivation film are report. A new quantitative explanation is given in this paper on index of refraction vs. velocity of growing.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Industrial synthesis of PECVD silicon nitride passivation film\",\"authors\":\"Y. Tang\",\"doi\":\"10.1109/HKEDM.1997.642331\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Plasma enhancement chemical vapour deposition (PECVD) silicon nitride can grow on alloying device at low temperature. So it can be used as passivation film on devices. The type DD-P250 deposition equipment used in several factories is a special purpose one for PECVD silicon nitride deposition. In this paper the author study various deposition parameters affecting thin film properties with the equipment used in manufacturing line. The optimum ranges of various deposition parameters and the conditions of depositing high quality silicon nitride passivation film are report. A new quantitative explanation is given in this paper on index of refraction vs. velocity of growing.\",\"PeriodicalId\":262767,\"journal\":{\"name\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1997.642331\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1997.642331","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Industrial synthesis of PECVD silicon nitride passivation film
Plasma enhancement chemical vapour deposition (PECVD) silicon nitride can grow on alloying device at low temperature. So it can be used as passivation film on devices. The type DD-P250 deposition equipment used in several factories is a special purpose one for PECVD silicon nitride deposition. In this paper the author study various deposition parameters affecting thin film properties with the equipment used in manufacturing line. The optimum ranges of various deposition parameters and the conditions of depositing high quality silicon nitride passivation film are report. A new quantitative explanation is given in this paper on index of refraction vs. velocity of growing.
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