Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

L. Huang, P. Lai, J. Xu, Y. Cheng
{"title":"Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET","authors":"L. Huang, P. Lai, J. Xu, Y. Cheng","doi":"10.1109/HKEDM.1997.642340","DOIUrl":null,"url":null,"abstract":"An analytical expression for gate-induced drain leakage (GIDL) current based on indirect tunneling theory is described, which can be used for both band-to-band and band-trap-band tunnelings. The voltage and temperature dependence of GIDL and hot-carrier-induced drain leakage are investigated. Experiment shows that interface traps participate in the conduction of GIDL and indirect band-trap-band tunneling could be a major mechanism responsible for GIDL.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"31","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1997.642340","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 31

Abstract

An analytical expression for gate-induced drain leakage (GIDL) current based on indirect tunneling theory is described, which can be used for both band-to-band and band-trap-band tunnelings. The voltage and temperature dependence of GIDL and hot-carrier-induced drain leakage are investigated. Experiment shows that interface traps participate in the conduction of GIDL and indirect band-trap-band tunneling could be a major mechanism responsible for GIDL.
关态n-MOSFET栅极诱发漏极的机理分析
基于间接隧穿理论,给出了栅极漏极电流的解析表达式,该表达式既适用于带对带隧穿,也适用于带阱-带隧穿。研究了GIDL的电压和温度依赖性以及热载子引起的漏极泄漏。实验表明,界面陷阱参与了GIDL的传导,间接带陷阱-带隧道可能是导致GIDL的主要机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信