{"title":"共振隧穿高电子迁移率晶体管的微波频率工作","authors":"K.J. Chen","doi":"10.1109/HKEDM.1997.642343","DOIUrl":null,"url":null,"abstract":"Microwave-frequency characteristics of a highly functional InP-based resonant-tunneling high electron mobility transistor (RTHELT) are reported in this paper. Based on small-signal S-parameter measurement, a maximum current gain cutoff frequency f/sub T/ of 28.6 GHz and a maximum power gain cutoff frequency f/sub max/ of 90 GHz were obtained for an RTHEMT with a 0.7-/spl mu/m gate length. Large-signal characteristics are also reported, showing the potential of RTHEMTs for frequency multiplier applications featuring high order harmonics multiplication with high conversion efficiency.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"126 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Microwave-frequency operation of resonant tunneling high electron mobility transistors\",\"authors\":\"K.J. Chen\",\"doi\":\"10.1109/HKEDM.1997.642343\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Microwave-frequency characteristics of a highly functional InP-based resonant-tunneling high electron mobility transistor (RTHELT) are reported in this paper. Based on small-signal S-parameter measurement, a maximum current gain cutoff frequency f/sub T/ of 28.6 GHz and a maximum power gain cutoff frequency f/sub max/ of 90 GHz were obtained for an RTHEMT with a 0.7-/spl mu/m gate length. Large-signal characteristics are also reported, showing the potential of RTHEMTs for frequency multiplier applications featuring high order harmonics multiplication with high conversion efficiency.\",\"PeriodicalId\":262767,\"journal\":{\"name\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"volume\":\"126 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1997.642343\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1997.642343","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microwave-frequency operation of resonant tunneling high electron mobility transistors
Microwave-frequency characteristics of a highly functional InP-based resonant-tunneling high electron mobility transistor (RTHELT) are reported in this paper. Based on small-signal S-parameter measurement, a maximum current gain cutoff frequency f/sub T/ of 28.6 GHz and a maximum power gain cutoff frequency f/sub max/ of 90 GHz were obtained for an RTHEMT with a 0.7-/spl mu/m gate length. Large-signal characteristics are also reported, showing the potential of RTHEMTs for frequency multiplier applications featuring high order harmonics multiplication with high conversion efficiency.