{"title":"基于非均匀衬底掺杂的深亚微米MOSFET阈值电压新模型","authors":"Wen-liang Zhang, Zhi-lian Yang","doi":"10.1109/HKEDM.1997.642326","DOIUrl":null,"url":null,"abstract":"A simple but accurate threshold voltage model for deep-submicron MOSFET's with nonuniform dopings is described in this paper. A simplified quasi-delta substrate doping profile is used to approximate the nonuniformity. We apply a hyperbola function to avoid the discontinuous problem at the boundary between different doping regions. By adjusting the parameter /spl delta/, the actual gradual doping profile can be obtained. The model developed is in good agreement with two-dimensional numerical simulation.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"321 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A new threshold voltage model for deep-submicron MOSFET's with nonuniform substrate dopings\",\"authors\":\"Wen-liang Zhang, Zhi-lian Yang\",\"doi\":\"10.1109/HKEDM.1997.642326\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple but accurate threshold voltage model for deep-submicron MOSFET's with nonuniform dopings is described in this paper. A simplified quasi-delta substrate doping profile is used to approximate the nonuniformity. We apply a hyperbola function to avoid the discontinuous problem at the boundary between different doping regions. By adjusting the parameter /spl delta/, the actual gradual doping profile can be obtained. The model developed is in good agreement with two-dimensional numerical simulation.\",\"PeriodicalId\":262767,\"journal\":{\"name\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"volume\":\"321 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1997.642326\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1997.642326","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new threshold voltage model for deep-submicron MOSFET's with nonuniform substrate dopings
A simple but accurate threshold voltage model for deep-submicron MOSFET's with nonuniform dopings is described in this paper. A simplified quasi-delta substrate doping profile is used to approximate the nonuniformity. We apply a hyperbola function to avoid the discontinuous problem at the boundary between different doping regions. By adjusting the parameter /spl delta/, the actual gradual doping profile can be obtained. The model developed is in good agreement with two-dimensional numerical simulation.
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