Mechanism of flicker noise in a-Si:H thin films

W. Ho, C. Surya
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Abstract

Flicker noise in n-type hydrogenated amorphous silicon is studied from room temperature to about 420 K. The device is first annealed at 450 K and subsequently cooled at rates of 0.5 K/s or 0.02 K/s. The temperature variations of both the voltage noise power spectra and the conductivity of the material exhibit strong dependencies on the cooling rate of the device. The current dependence of the voltage noise power spectra is found to deviate from the power law indicating that the noise arises from a non-linear system. The voltage noise power spectra is found to vary as R/sup P/ and p is dependent on the temperature and the cooling process of the device. Our experimental data provides strong evidence that the flicker noise originates from hydrogen motion within the material. The process appears to cause fluctuations in the device conductance by modulating the percolation path of the carriers.
a-Si:H薄膜中闪烁噪声的机理
研究了n型氢化非晶硅在室温至约420 K范围内的闪烁噪声。该器件首先在450k退火,随后以0.5 K/s或0.02 K/s的速率冷却。电压噪声功率谱和材料电导率的温度变化与器件的冷却速率密切相关。发现电压噪声功率谱的电流依赖关系偏离幂律,表明噪声来自非线性系统。电压噪声功率谱随R/sup P/而变化,P依赖于器件的温度和冷却过程。我们的实验数据提供了强有力的证据,表明闪烁噪声来源于物质内部的氢运动。该过程似乎通过调制载流子的渗透路径而引起器件电导的波动。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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