Effects of low-energy backsurface gettering on the properties of low-frequency excess noise in NH/sub 3/ and N/sub 2/O nitrided MOSFETs

W. Wang, C. Surya, P. Lai
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Abstract

Nitridation of the gate dielectric for n-channel Si MOSFETs is carried out by rapid thermal annealing in either NH/sub 3/ or N/sub 2/O followed by low-energy Ar/sup +/ gettering. The effects on flicker noise are characterized over a wide range of temperatures and biases. The gettering time ranged from from 10 to 40 minutes for NH/sub 3/ nitrided devices and 10 and 20 minutes for N/sub 2/O nitrided devices. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that, for both types of devices, flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigation of the temperature dependence of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO/sub 2/ interface. Backsurface gettering results in a modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO/sub 2/ interface.
低能量背表面吸波对NH/sub /和N/sub /O氮化mosfet低频过量噪声的影响
N沟道硅mosfet栅极介电介质的氮化是通过在nh3 /或nh2 /O中快速热退火,然后进行低能Ar/sup +/捕集来实现的。对闪烁噪声的影响在很大的温度和偏置范围内具有特征。NH/ sub3 /氮化装置的沉淀时间为10 ~ 40分钟,N/ sub2 /O氮化装置的沉淀时间为10 ~ 20分钟。将不同采样时间下的噪声功率谱与未采样时间下的噪声功率谱进行了比较。研究发现,对于这两种类型的器件,在短的吸波时间内,背表面吸波可以降低闪烁噪声。在较长的采集时间内观察到噪声强度的反弹。噪声功率谱的温度依赖性研究表明,低频噪声是由Si-SiO/sub - 2/界面上载流子对陷阱的热激活引起的。背表面吸光导致界面阱能量分布的改变,这可能是由于Si-SiO/sub - 2/界面处的应力松弛所致。
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