A high density IC compatible microtransducer/diaphragm design on micro-cavity SOI technology

Abstract

This paper demonstrates the cross-functional results for stress analyses (targeting 5 /spl mu/m deflection and 1000 MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI (Silicon-On-Insulator) structures, and for showing the most feasible deflection and small stress at various ambient pressure from double SOI based sensor. The SOI micro-cavity formed the sensors would be promising to integrate with current CMOS drivers onto monolithic chip in the future.