Solid-state Electronics最新文献_第7页

Analytical modeling of nanoscale double-gate junctionless transistors comprising the impact of the source and drain underlap regions 纳米级双栅无结晶体管的解析建模，包括源极和漏极下搭区影响

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-25 DOI: 10.1016/j.sse.2025.109105

Miltiadis K. Nakos , Andreas Tsormpatzoglou , Dimitrios H. Tassis , Theodoros A. Oproglidis , Constantinos T. Angelis , Charalabos A. Dimitriadis

{"title":"Analytical modeling of nanoscale double-gate junctionless transistors comprising the impact of the source and drain underlap regions","authors":"Miltiadis K. Nakos , Andreas Tsormpatzoglou , Dimitrios H. Tassis , Theodoros A. Oproglidis , Constantinos T. Angelis , Charalabos A. Dimitriadis","doi":"10.1016/j.sse.2025.109105","DOIUrl":"10.1016/j.sse.2025.109105","url":null,"abstract":"<div><div>In this study, we investigate the impact of the source and drain (S/D) underlap regions on the electrical characteristics of short-channel double-gate junctionless transistors (DG JLTs). Analytical expression for the potential distribution in the gate overlap and S/D underlap regions is introduced, which relies on a single fitting parameter and the gate fringe capacitance in the underlap regions. The derived potential distribution shows good agreement with simulation results across different underlap lengths and gate/drain bias voltages. Consequently, new expressions for the threshold voltage and the subthreshold swing coefficient of DG JLTs are developed comprising the effect of the S/D underlap regions, which are used for upgrading our previous continuous and symmetric analytical drain current compact model. The findings highlight the significant influence of the S/D underlap regions on the electrical characteristics of DG JLTs, suggesting a need for their careful consideration in drain current compact modeling.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"227 ","pages":"Article 109105"},"PeriodicalIF":1.4,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143725758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Recent progress in bipolar and heterojunction bipolar transistors on SOI SOI上双极和异质结双极晶体管的研究进展

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-20 DOI: 10.1016/j.sse.2025.109101

Soumya Ranjan Panda , Thomas Zimmer , Anjan Chakravorty , Sebastien Fregonese

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Expanding the potential of Zn0.15Sn0.85(Se0.95S0.05)2 crystals for applications in near-infrared optoelectronics, sensing, and Van der Waals heterojunctions 扩大Zn0.15Sn0.85(Se0.95S0.05)2晶体在近红外光电子学、传感和范德华异质结中的应用潜力

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-15 DOI: 10.1016/j.sse.2025.109104

Yash N. Doshi , Dixita S. Parmar , Ajay D. Zanpadiya , Aditi P. Pathak , Divya R. Solanki , Dimple V. Shah , Vishva M. Jain , Hiren N. Desai , Piyush B. Patel

{"title":"Expanding the potential of Zn0.15Sn0.85(Se0.95S0.05)2 crystals for applications in near-infrared optoelectronics, sensing, and Van der Waals heterojunctions","authors":"Yash N. Doshi , Dixita S. Parmar , Ajay D. Zanpadiya , Aditi P. Pathak , Divya R. Solanki , Dimple V. Shah , Vishva M. Jain , Hiren N. Desai , Piyush B. Patel","doi":"10.1016/j.sse.2025.109104","DOIUrl":"10.1016/j.sse.2025.109104","url":null,"abstract":"<div><div>Layered Zn<sub>0.15</sub>Sn<sub>0.85</sub>(Se<sub>0.95</sub>S<sub>0.05</sub>)<sub>2</sub> (Q2) crystals with a hexagonal crystalline structure were grown using the direct vapor transport technique (DVT). This research explores applications of the grown Q2 crystals as a near-infrared (NIR) photodetector, vacuum pressure sensor, and Van der Waals heterojunction. The NIR photodetector demonstrating stable, rapid switching with an improved responsivity of 153.38 mAW<sup>-1</sup>. A Q2 crystal-based NIR photodetector achieves an external quantum efficiency of 21.17 %. The Maxwellian distribution was applied to analysis trap depth of NIR photodetector. Additionally, the pulse resistive response of the Q2 crystal-based vacuum pressure sensor was evaluated across a vacuum pressure range from −1033 mbar to 0 mbar. The sensor exhibited a stable response, with 61.27 % at −1033 mbar and 5.85 % at −133 mbar with an average delay time of 2.99 s. Furthermore, the Van der Waals heterojunction device formed by the grown p-type Q2 crystals with another n-type quaternary crystal was studied using the thermionic-emission (TE) model. The ideality factors have been defined in the range of 1 to 2 by studying the current voltage (I-V) characteristics under different temperatures.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"226 ","pages":"Article 109104"},"PeriodicalIF":1.4,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143642555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Intense near-infrared electroluminescence properties from ZnO:Yb LED ZnO:Yb LED的强近红外电致发光特性

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-12 DOI: 10.1016/j.sse.2025.109102

Qingxue Zhao , Shenwei Wang , Zhengmao Wen , Weifang Zhang , Xiaoxia Duan , Lixin Yi

引用次数: 0

Traps characterization in RF SOI substrates including a buried SiGe layer 射频 SOI 基底（包括埋入的 SiGe 层）中的陷波表征

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-11 DOI: 10.1016/j.sse.2025.109103

Y. Yan , M. Rack , M. Vanbrabant , M. Nabet , A. Goebel , P. Clifton , J.-P. Raskin

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An efficient temperature dependent compact model for nanosheet FET for neuromorphic computing circuit 用于神经形态计算电路的纳米片场效应晶体管的高效温度相关紧凑模型

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-10 DOI: 10.1016/j.sse.2025.109096

N. Aruna Kumari , Abhishek Kumar Upadhyay , Vikas Vijayvargiya , Gaurav Singh , Ankur Beohar , Prithvi P.

引用次数: 0

Low power consumption of non-volatile memory device by tunneling process engineering 隧道工艺设计的低功耗非易失性存储器

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-09 DOI: 10.1016/j.sse.2025.109100

Fucheng Wang , Mengmeng Chu , Jingwen Chen , Zhong Pan , Yongsang Kim , Jang kun Song , Muhammad Quddamah Khokhar , Junsin Yi

{"title":"Low power consumption of non-volatile memory device by tunneling process engineering","authors":"Fucheng Wang , Mengmeng Chu , Jingwen Chen , Zhong Pan , Yongsang Kim , Jang kun Song , Muhammad Quddamah Khokhar , Junsin Yi","doi":"10.1016/j.sse.2025.109100","DOIUrl":"10.1016/j.sse.2025.109100","url":null,"abstract":"<div><div>Compared with Si<sub>3</sub>N<sub>4</sub> and Al<sub>2</sub>O<sub>3</sub>, SiO<sub>2</sub> grown using thermal oxidation process as tunneling layer has the advantages of high bandgap and well interface contact with the surface of silicon wafer, which can be a great solution to the leakage current problem of metal–insulator-semiconductor (MIS) devices. This study investigates the effect of improving the SiO<sub>2</sub> tunnel layer on the operating voltage of MIS devices with a SiO<sub>2</sub>/HfAlO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> structure. The result shows the operating voltage changes as the tunneling layer thickness decreases, with a minimum of only 12 V for a 1.5 nm tunneling layer thickness. In addition, we found that pinholes are generated on the film surface when annealing a 1.5 nm SiO<sub>2</sub> tunnel layer at 850 °C N<sub>2</sub>, in which case the operating voltage of the device is reduced to only 10 V, though it was also accompanied by the deterioration of the retention characteristics.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"226 ","pages":"Article 109100"},"PeriodicalIF":1.4,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143627960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Selective grain size enlargement in Contact/Via plugs using Nanosecond green laser annealing 利用纳秒绿色激光退火技术有选择地增大接触/Via 塞的晶粒尺寸

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-07 DOI: 10.1016/j.sse.2025.109098

Jaejoong Jeong , Youngkeun Park , Hwanuk Guim , Yongku Baek , Heetae Kim , Dongbin Kim , Hui Jae Cho , Su-hyeon Gwon , Min Ju Kim , Byung Jin Cho

{"title":"Selective grain size enlargement in Contact/Via plugs using Nanosecond green laser annealing","authors":"Jaejoong Jeong , Youngkeun Park , Hwanuk Guim , Yongku Baek , Heetae Kim , Dongbin Kim , Hui Jae Cho , Su-hyeon Gwon , Min Ju Kim , Byung Jin Cho","doi":"10.1016/j.sse.2025.109098","DOIUrl":"10.1016/j.sse.2025.109098","url":null,"abstract":"<div><div>The rapid decrease in interconnect Critical Dimensions (CDs) within logic devices and growth in the contact height of 3D memory devices have led to increased contact/via plugs resistance. In this study, we introduce an approach to reduce the resistance of the contact/via plugs by engineering the grain size of the plugs using Nanosecond Green Laser Annealing (NGLA) with a low energy fluence (= 0.1 J/cm<sup>2</sup>). Because of the proximity between adjacent W plugs, diffraction of the laser light can occur which will help the laser energy to be absorbed by the sidewall of the W plugs. In addition, the difference in reflectivity between the plug region and W interconnect lines can cause grain size enlargement to selectively occur in the plug region. The NGLA process increased grain size in the plugs up to 79.9 %, resulting as much as a 26 % reduction in tungsten plug resistance. The standard deviation of the plug resistance was also improved from 14.6 % to 7.9 % after the NGLA process.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"226 ","pages":"Article 109098"},"PeriodicalIF":1.4,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143620325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Low-frequency noise in polysilicon Source-Gated Thin-Film transistors 多晶硅源门控薄膜晶体管中的低频噪声

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-03 DOI: 10.1016/j.sse.2025.109099

Q. Chen , L.Van Brandt , V. Kilchytska , E. Bestelink , R.A. Sporea , D. Flandre

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High-endurance bulk CMOS one-transistor cryo-memory 高耐久体积CMOS单晶体管低温存储器

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-02-28 DOI: 10.1016/j.sse.2025.109097

A. Zaslavsky , P.R. Shrestha , V.Ortiz Jimenez , J.P. Campbell , C.A. Richter

引用次数: 0