Qian Bo-Han, Sun Jiu-Xun, Wei Chan, Li Yang, Cui Hai-Juan, Yang Hong-Chun
{"title":"Analytic model for organic field-effect transistors based on Vissenberg-Matters mobility model","authors":"Qian Bo-Han, Sun Jiu-Xun, Wei Chan, Li Yang, Cui Hai-Juan, Yang Hong-Chun","doi":"10.1016/j.sse.2025.109183","DOIUrl":null,"url":null,"abstract":"<div><div>The fundamental <em>I</em>–<em>V</em> formula of an organic field effect transistor (OFET) is reformulated as double integral of mobility function by using the Poisson’s equation. The reformulated <em>I</em>–<em>V</em> formula overcome the divergence of the integrand in original <em>I</em>–<em>V</em> formula and is convenient not only for further analytic derivations but also for numerical calculations. An analytic binomial expansion for arbitrary power is proposed to analytically derive the OFET model based on Vissenberg-Matters (VM) mobility model being able to consider all terms deduced from the completed VM model. The numerical calculations for six OFET made of four kinds of materials show that the matching degree between theoretical <em>I</em>–<em>V</em> curves and the experimental data is satisfactory for completed model, but evident deviations for <em>I<sub>D</sub></em>–<em>V<sub>D</sub></em> curves exhibited in usual treatment that only considering first term deduced from the VM model. It is important to consider all terms in modelling OFET to ensure accuracy and reliability for extraction of parameters. These are useful for practical applications and device simulations.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109183"},"PeriodicalIF":1.4000,"publicationDate":"2025-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125001285","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The fundamental I–V formula of an organic field effect transistor (OFET) is reformulated as double integral of mobility function by using the Poisson’s equation. The reformulated I–V formula overcome the divergence of the integrand in original I–V formula and is convenient not only for further analytic derivations but also for numerical calculations. An analytic binomial expansion for arbitrary power is proposed to analytically derive the OFET model based on Vissenberg-Matters (VM) mobility model being able to consider all terms deduced from the completed VM model. The numerical calculations for six OFET made of four kinds of materials show that the matching degree between theoretical I–V curves and the experimental data is satisfactory for completed model, but evident deviations for ID–VD curves exhibited in usual treatment that only considering first term deduced from the VM model. It is important to consider all terms in modelling OFET to ensure accuracy and reliability for extraction of parameters. These are useful for practical applications and device simulations.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.