Analytic model for organic field-effect transistors based on Vissenberg-Matters mobility model

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Qian Bo-Han, Sun Jiu-Xun, Wei Chan, Li Yang, Cui Hai-Juan, Yang Hong-Chun
{"title":"Analytic model for organic field-effect transistors based on Vissenberg-Matters mobility model","authors":"Qian Bo-Han,&nbsp;Sun Jiu-Xun,&nbsp;Wei Chan,&nbsp;Li Yang,&nbsp;Cui Hai-Juan,&nbsp;Yang Hong-Chun","doi":"10.1016/j.sse.2025.109183","DOIUrl":null,"url":null,"abstract":"<div><div>The fundamental <em>I</em>–<em>V</em> formula of an organic field effect transistor (OFET) is reformulated as double integral of mobility function by using the Poisson’s equation. The reformulated <em>I</em>–<em>V</em> formula overcome the divergence of the integrand in original <em>I</em>–<em>V</em> formula and is convenient not only for further analytic derivations but also for numerical calculations. An analytic binomial expansion for arbitrary power is proposed to analytically derive the OFET model based on Vissenberg-Matters (VM) mobility model being able to consider all terms deduced from the completed VM model. The numerical calculations for six OFET made of four kinds of materials show that the matching degree between theoretical <em>I</em>–<em>V</em> curves and the experimental data is satisfactory for completed model, but evident deviations for <em>I<sub>D</sub></em>–<em>V<sub>D</sub></em> curves exhibited in usual treatment that only considering first term deduced from the VM model. It is important to consider all terms in modelling OFET to ensure accuracy and reliability for extraction of parameters. These are useful for practical applications and device simulations.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109183"},"PeriodicalIF":1.4000,"publicationDate":"2025-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125001285","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The fundamental IV formula of an organic field effect transistor (OFET) is reformulated as double integral of mobility function by using the Poisson’s equation. The reformulated IV formula overcome the divergence of the integrand in original IV formula and is convenient not only for further analytic derivations but also for numerical calculations. An analytic binomial expansion for arbitrary power is proposed to analytically derive the OFET model based on Vissenberg-Matters (VM) mobility model being able to consider all terms deduced from the completed VM model. The numerical calculations for six OFET made of four kinds of materials show that the matching degree between theoretical IV curves and the experimental data is satisfactory for completed model, but evident deviations for IDVD curves exhibited in usual treatment that only considering first term deduced from the VM model. It is important to consider all terms in modelling OFET to ensure accuracy and reliability for extraction of parameters. These are useful for practical applications and device simulations.

Abstract Image

基于Vissenberg-Matters迁移率模型的有机场效应晶体管解析模型
利用泊松方程将有机场效应晶体管(OFET)的基本I-V公式重新表述为迁移率函数的二重积分。重新表述的I-V公式克服了原I-V公式中被积函数的发散性,不仅便于进一步的解析推导,而且便于数值计算。提出了一种基于Vissenberg-Matters (VM)迁移率模型的任意幂次解析二项式展开式,以解析导出OFET模型,该模型能够考虑由完成的VM模型推导出的所有项。对4种材料制成的6个OFET的数值计算表明,理论I-V曲线与实验数据的匹配程度令人满意,但通常只考虑从VM模型推导出的第一项时,对ID-VD曲线的处理存在明显偏差。为了保证参数提取的准确性和可靠性,在对OFET建模时考虑所有的项是很重要的。这些对于实际应用和设备模拟非常有用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信