Solid-state Electronics最新文献

Analytical modeling of nanoscale double-gate junctionless transistors comprising the impact of the source and drain underlap regions

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-25 DOI: 10.1016/j.sse.2025.109105

Miltiadis K. Nakos , Andreas Tsormpatzoglou , Dimitrios H. Tassis , Theodoros A. Oproglidis , Constantinos T. Angelis , Charalabos A. Dimitriadis

{"title":"Analytical modeling of nanoscale double-gate junctionless transistors comprising the impact of the source and drain underlap regions","authors":"Miltiadis K. Nakos , Andreas Tsormpatzoglou , Dimitrios H. Tassis , Theodoros A. Oproglidis , Constantinos T. Angelis , Charalabos A. Dimitriadis","doi":"10.1016/j.sse.2025.109105","DOIUrl":"10.1016/j.sse.2025.109105","url":null,"abstract":"<div><div>In this study, we investigate the impact of the source and drain (S/D) underlap regions on the electrical characteristics of short-channel double-gate junctionless transistors (DG JLTs). Analytical expression for the potential distribution in the gate overlap and S/D underlap regions is introduced, which relies on a single fitting parameter and the gate fringe capacitance in the underlap regions. The derived potential distribution shows good agreement with simulation results across different underlap lengths and gate/drain bias voltages. Consequently, new expressions for the threshold voltage and the subthreshold swing coefficient of DG JLTs are developed comprising the effect of the S/D underlap regions, which are used for upgrading our previous continuous and symmetric analytical drain current compact model. The findings highlight the significant influence of the S/D underlap regions on the electrical characteristics of DG JLTs, suggesting a need for their careful consideration in drain current compact modeling.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"227 ","pages":"Article 109105"},"PeriodicalIF":1.4,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143725758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent progress in bipolar and heterojunction bipolar transistors on SOI

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-20 DOI: 10.1016/j.sse.2025.109101

Soumya Ranjan Panda , Thomas Zimmer , Anjan Chakravorty , Sebastien Fregonese

引用次数: 0

Expanding the potential of Zn0.15Sn0.85(Se0.95S0.05)2 crystals for applications in near-infrared optoelectronics, sensing, and Van der Waals heterojunctions

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-15 DOI: 10.1016/j.sse.2025.109104

Yash N. Doshi , Dixita S. Parmar , Ajay D. Zanpadiya , Aditi P. Pathak , Divya R. Solanki , Dimple V. Shah , Vishva M. Jain , Hiren N. Desai , Piyush B. Patel

{"title":"Expanding the potential of Zn0.15Sn0.85(Se0.95S0.05)2 crystals for applications in near-infrared optoelectronics, sensing, and Van der Waals heterojunctions","authors":"Yash N. Doshi , Dixita S. Parmar , Ajay D. Zanpadiya , Aditi P. Pathak , Divya R. Solanki , Dimple V. Shah , Vishva M. Jain , Hiren N. Desai , Piyush B. Patel","doi":"10.1016/j.sse.2025.109104","DOIUrl":"10.1016/j.sse.2025.109104","url":null,"abstract":"<div><div>Layered Zn<sub>0.15</sub>Sn<sub>0.85</sub>(Se<sub>0.95</sub>S<sub>0.05</sub>)<sub>2</sub> (Q2) crystals with a hexagonal crystalline structure were grown using the direct vapor transport technique (DVT). This research explores applications of the grown Q2 crystals as a near-infrared (NIR) photodetector, vacuum pressure sensor, and Van der Waals heterojunction. The NIR photodetector demonstrating stable, rapid switching with an improved responsivity of 153.38 mAW<sup>-1</sup>. A Q2 crystal-based NIR photodetector achieves an external quantum efficiency of 21.17 %. The Maxwellian distribution was applied to analysis trap depth of NIR photodetector. Additionally, the pulse resistive response of the Q2 crystal-based vacuum pressure sensor was evaluated across a vacuum pressure range from −1033 mbar to 0 mbar. The sensor exhibited a stable response, with 61.27 % at −1033 mbar and 5.85 % at −133 mbar with an average delay time of 2.99 s. Furthermore, the Van der Waals heterojunction device formed by the grown p-type Q2 crystals with another n-type quaternary crystal was studied using the thermionic-emission (TE) model. The ideality factors have been defined in the range of 1 to 2 by studying the current voltage (I-V) characteristics under different temperatures.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"226 ","pages":"Article 109104"},"PeriodicalIF":1.4,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143642555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Intense near-infrared electroluminescence properties from ZnO:Yb LED

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-12 DOI: 10.1016/j.sse.2025.109102

Qingxue Zhao , Shenwei Wang , Zhengmao Wen , Weifang Zhang , Xiaoxia Duan , Lixin Yi

引用次数: 0

Traps characterization in RF SOI substrates including a buried SiGe layer 射频 SOI 基底（包括埋入的 SiGe 层）中的陷波表征

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-11 DOI: 10.1016/j.sse.2025.109103

Y. Yan , M. Rack , M. Vanbrabant , M. Nabet , A. Goebel , P. Clifton , J.-P. Raskin

引用次数: 0

Low power consumption of non-volatile memory device by tunneling process engineering

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-09 DOI: 10.1016/j.sse.2025.109100

Fucheng Wang , Mengmeng Chu , Jingwen Chen , Zhong Pan , Yongsang Kim , Jang kun Song , Muhammad Quddamah Khokhar , Junsin Yi

{"title":"Low power consumption of non-volatile memory device by tunneling process engineering","authors":"Fucheng Wang , Mengmeng Chu , Jingwen Chen , Zhong Pan , Yongsang Kim , Jang kun Song , Muhammad Quddamah Khokhar , Junsin Yi","doi":"10.1016/j.sse.2025.109100","DOIUrl":"10.1016/j.sse.2025.109100","url":null,"abstract":"<div><div>Compared with Si<sub>3</sub>N<sub>4</sub> and Al<sub>2</sub>O<sub>3</sub>, SiO<sub>2</sub> grown using thermal oxidation process as tunneling layer has the advantages of high bandgap and well interface contact with the surface of silicon wafer, which can be a great solution to the leakage current problem of metal–insulator-semiconductor (MIS) devices. This study investigates the effect of improving the SiO<sub>2</sub> tunnel layer on the operating voltage of MIS devices with a SiO<sub>2</sub>/HfAlO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> structure. The result shows the operating voltage changes as the tunneling layer thickness decreases, with a minimum of only 12 V for a 1.5 nm tunneling layer thickness. In addition, we found that pinholes are generated on the film surface when annealing a 1.5 nm SiO<sub>2</sub> tunnel layer at 850 °C N<sub>2</sub>, in which case the operating voltage of the device is reduced to only 10 V, though it was also accompanied by the deterioration of the retention characteristics.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"226 ","pages":"Article 109100"},"PeriodicalIF":1.4,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143627960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Selective grain size enlargement in Contact/Via plugs using Nanosecond green laser annealing 利用纳秒绿色激光退火技术有选择地增大接触/Via 塞的晶粒尺寸

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-07 DOI: 10.1016/j.sse.2025.109098

Jaejoong Jeong , Youngkeun Park , Hwanuk Guim , Yongku Baek , Heetae Kim , Dongbin Kim , Hui Jae Cho , Su-hyeon Gwon , Min Ju Kim , Byung Jin Cho

{"title":"Selective grain size enlargement in Contact/Via plugs using Nanosecond green laser annealing","authors":"Jaejoong Jeong , Youngkeun Park , Hwanuk Guim , Yongku Baek , Heetae Kim , Dongbin Kim , Hui Jae Cho , Su-hyeon Gwon , Min Ju Kim , Byung Jin Cho","doi":"10.1016/j.sse.2025.109098","DOIUrl":"10.1016/j.sse.2025.109098","url":null,"abstract":"<div><div>The rapid decrease in interconnect Critical Dimensions (CDs) within logic devices and growth in the contact height of 3D memory devices have led to increased contact/via plugs resistance. In this study, we introduce an approach to reduce the resistance of the contact/via plugs by engineering the grain size of the plugs using Nanosecond Green Laser Annealing (NGLA) with a low energy fluence (= 0.1 J/cm<sup>2</sup>). Because of the proximity between adjacent W plugs, diffraction of the laser light can occur which will help the laser energy to be absorbed by the sidewall of the W plugs. In addition, the difference in reflectivity between the plug region and W interconnect lines can cause grain size enlargement to selectively occur in the plug region. The NGLA process increased grain size in the plugs up to 79.9 %, resulting as much as a 26 % reduction in tungsten plug resistance. The standard deviation of the plug resistance was also improved from 14.6 % to 7.9 % after the NGLA process.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"226 ","pages":"Article 109098"},"PeriodicalIF":1.4,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143620325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-frequency noise in polysilicon Source-Gated Thin-Film transistors

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-03-03 DOI: 10.1016/j.sse.2025.109099

Q. Chen , L.Van Brandt , V. Kilchytska , E. Bestelink , R.A. Sporea , D. Flandre

引用次数: 0

High-endurance bulk CMOS one-transistor cryo-memory

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-02-28 DOI: 10.1016/j.sse.2025.109097

A. Zaslavsky , P.R. Shrestha , V.Ortiz Jimenez , J.P. Campbell , C.A. Richter

引用次数: 0

Investigation of reconfigurable logic gate using integrated amorphous InGaZnO ReRAM and thin-film transistor

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-02-19 DOI: 10.1016/j.sse.2025.109084

Jung Rae Cho , Jingyu Park , Seung Joo Myoung , Tae Jun Yang , Changwook Kim , Jong-Ho Bae , Sung-Jin Choi , Dong Myong Kim , Ickhyun Song , Dae Hwan Kim

{"title":"Investigation of reconfigurable logic gate using integrated amorphous InGaZnO ReRAM and thin-film transistor","authors":"Jung Rae Cho , Jingyu Park , Seung Joo Myoung , Tae Jun Yang , Changwook Kim , Jong-Ho Bae , Sung-Jin Choi , Dong Myong Kim , Ickhyun Song , Dae Hwan Kim","doi":"10.1016/j.sse.2025.109084","DOIUrl":"10.1016/j.sse.2025.109084","url":null,"abstract":"<div><div>This paper proposes a new reconfigurable logic circuits based on InGaZnO resistive random-access memory (ReRAM) and presents a comprehensive investigation of their electrical characteristics and logic operation. Two fundamental equations that govern the transport mechanism of oxygen ions were utilized to model the formation of lateral and vertical conducting filaments in ReRAM devices in a circuit simulation environment. Based on the device models, the electrical behavior of ReRAM was examined and verified, using circuit simulators. Experimental results from dc current–voltage and pulse measurements of ReRAM and thin-film transistors (TFTs) demonstrate their electrical switching characteristics. The paper analyzes and validates the operation of two ReRAM-based logic configurations: 1 T-1 M (one transistor and one ReRAM cell) and 2 T-2 M−INV (inverter). A detailed analysis were conducted to compare the proposed ReRAM-based logic with the conventional CMOS counterparts, revealing favorable advantages in reducing transistor counts and die areas. The 1 T-1 M and 2 T-2 M−INV exhibit reconfigurable logic operations under different resistive states of ReRAM cells. Additionally, the investigations of short-circuit current profiles shows the superior performance of ReRAM-based logic gates to the CMOS counterpart in terms of power consumption. Overall, this study investigates the feasibility of ReRAM-based reconfigurable logic circuits for future low-power and high-performance computing applications.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"226 ","pages":"Article 109084"},"PeriodicalIF":1.4,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143487699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0