Solid-state Electronics最新文献

Superimposed two-contact gate stacks for an improved electrostatic control of Si spin qubits 用于改进硅自旋量子比特静电控制的叠加双触点栅极堆

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-06-30 DOI: 10.1016/j.sse.2025.109178

B. Martinez , B. Bertrand , Y.-M. Niquet , M. Vinet

引用次数: 0

Low-loss RF substrate compatible with FD-SOI integration using Si+ implantation 使用Si+注入与FD-SOI集成兼容的低损耗射频衬底

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-06-27 DOI: 10.1016/j.sse.2025.109189

M. Perrosé , P. Acosta , J. Lugo-Alvarez , A.M. Papon , X. Garros , J.P. Raskin

引用次数: 0

Thin dielectric to dielectric hydrophilic wafer bonding for FD-SOI and C-FET manufacturing 用于FD-SOI和C-FET制造的薄介电到介电亲水性晶圆键合

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-06-27 DOI: 10.1016/j.sse.2025.109188

P. Noel , V. Larrey , S. Tardif , F. Rieutord , D. Landru , F. Fournel

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Enhancing the mobility of p-type SnOx thin-film transistors through doping and plasma treatment 通过掺杂和等离子体处理提高p型SnOx薄膜晶体管的迁移率

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-06-25 DOI: 10.1016/j.sse.2025.109181

Zhong Pan , Yeojin Jeong , MengMeng Chu , Yunhui Jang , Fucheng Wang , Jingwen Chen , Yong-Sang Kim , Jang-Kun Song , Muhammad Quddamah Khokhar , Junsin Yi

{"title":"Enhancing the mobility of p-type SnOx thin-film transistors through doping and plasma treatment","authors":"Zhong Pan , Yeojin Jeong , MengMeng Chu , Yunhui Jang , Fucheng Wang , Jingwen Chen , Yong-Sang Kim , Jang-Kun Song , Muhammad Quddamah Khokhar , Junsin Yi","doi":"10.1016/j.sse.2025.109181","DOIUrl":"10.1016/j.sse.2025.109181","url":null,"abstract":"<div><div>P-type semiconductors are less common than their n-type counterparts, and their performance often lags in comparison, which hinders the efficiency of electronic devices. In this study, we demonstrate a two-step approach to enhance the performance of tin oxide based thin-film transistors (TFTs) by combining aluminum (Al) doping and hydrogen plasma treatment. The Al doping significantly enhanced the field-effect mobility of the SnO<sub>x</sub> films, while the hydrogen plasma treatment enabled the transition to p-type conductivity. The fabricated p-type Al-doped SnO<sub>x</sub> TFTs exhibited a threshold voltage of −5.2 V, a field-effect mobility of 1.17 cm<sup>2</sup>/V·s, and I<sub>on</sub>/I<sub>off</sub> of 10<sup>5</sup>. This work provides a novel strategy for optimizing the performance of p-type SnO<sub>x</sub> semiconductors, contributing to the development of low-power complementary metal-oxide semiconductor (CMOS) technologies.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109181"},"PeriodicalIF":1.4,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144502114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-aligned nitrogen doping via plasma treatment of NiO/β-Ga2O3 heterojunction diodes 等离子体处理NiO/β-Ga2O3异质结二极管的自对准氮掺杂

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-06-25 DOI: 10.1016/j.sse.2025.109182

Dongbin Kim , Jongsu Baek , Yoonho Choi , Junghun Kim , Hyoung Woo Kim , Byung Jin Cho

引用次数: 0

Analytic model for organic field-effect transistors based on Vissenberg-Matters mobility model 基于Vissenberg-Matters迁移率模型的有机场效应晶体管解析模型

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-06-21 DOI: 10.1016/j.sse.2025.109183

Qian Bo-Han, Sun Jiu-Xun, Wei Chan, Li Yang, Cui Hai-Juan, Yang Hong-Chun

{"title":"Analytic model for organic field-effect transistors based on Vissenberg-Matters mobility model","authors":"Qian Bo-Han, Sun Jiu-Xun, Wei Chan, Li Yang, Cui Hai-Juan, Yang Hong-Chun","doi":"10.1016/j.sse.2025.109183","DOIUrl":"10.1016/j.sse.2025.109183","url":null,"abstract":"<div><div>The fundamental <em>I</em>–<em>V</em> formula of an organic field effect transistor (OFET) is reformulated as double integral of mobility function by using the Poisson’s equation. The reformulated <em>I</em>–<em>V</em> formula overcome the divergence of the integrand in original <em>I</em>–<em>V</em> formula and is convenient not only for further analytic derivations but also for numerical calculations. An analytic binomial expansion for arbitrary power is proposed to analytically derive the OFET model based on Vissenberg-Matters (VM) mobility model being able to consider all terms deduced from the completed VM model. The numerical calculations for six OFET made of four kinds of materials show that the matching degree between theoretical <em>I</em>–<em>V</em> curves and the experimental data is satisfactory for completed model, but evident deviations for <em>I<sub>D</sub></em>–<em>V<sub>D</sub></em> curves exhibited in usual treatment that only considering first term deduced from the VM model. It is important to consider all terms in modelling OFET to ensure accuracy and reliability for extraction of parameters. These are useful for practical applications and device simulations.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109183"},"PeriodicalIF":1.4,"publicationDate":"2025-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144471777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

3xVDD-tolerant power-rail ESD clamp circuit for negative mixed-voltage interfaces 3xdd容限电源轨ESD箝位电路，用于负混合电压接口

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-06-21 DOI: 10.1016/j.sse.2025.109185

Hao-En Cheng , Ching-Lin Wu , Chun-Yu Lin

引用次数: 0

Investigation of heavy-ion induced degradation and catastrophic burnout mechanism in SiC diode 碳化硅二极管重离子诱导降解及灾变燃尽机理研究

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-06-19 DOI: 10.1016/j.sse.2025.109184

Hong Zhang , Chao Peng , Teng Ma , Zhan-Gang Zhang , Yu-Juan He , Bin Li , Zhi-Feng Lei

{"title":"Investigation of heavy-ion induced degradation and catastrophic burnout mechanism in SiC diode","authors":"Hong Zhang , Chao Peng , Teng Ma , Zhan-Gang Zhang , Yu-Juan He , Bin Li , Zhi-Feng Lei","doi":"10.1016/j.sse.2025.109184","DOIUrl":"10.1016/j.sse.2025.109184","url":null,"abstract":"<div><div>Irradiation experiment and simulation of 205-MeV Ge ion and 283-MeV I ion were used to analyze the single event leakage current (SELC) and the single event burnout (SEB) mechanism of SiC diode. Under two selected heavy ion irradiations, the ampere-magnitude pulse current were generated along with the occurrence of SEB. The SEB area was found to cover the anode metal, epitaxial layer and substrate in microscopic analysis, which resulted in damage to the forward and reverse characteristics of device. Devices were irradiated by 205-MeV Ge ion with a fluence of 5 × 10<sup>6</sup> n·cm<sup>−2</sup>, under 200 V and 300 V reverse bias voltages, the breakdown voltage were degraded by 70 % and 82 % respectively. The anode contacts of SELC devices had local fractures and displacements, which led to the degradation of breakdown characteristics. Combined Monte Carlo simulation and TCAD simulation, the SEB critical temperature appeared near the anode contact firstly when the two selected heavy ions were incident. When the two selected heavy ions were incident from Schottky and Ohmic contacts at a bias voltage of 200 V, excessive temperature in local areas and temperature differences between different anode materials caused the fractures and displacements of anode contact.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109184"},"PeriodicalIF":1.4,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144471778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature-dependence of current gain and turn-on voltages of GaAs-based HBTs with different base layers grown by MOCVD MOCVD生长不同基层gaas基hbt电流增益和导通电压的温度依赖性

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-06-16 DOI: 10.1016/j.sse.2025.109180

Zhen Liu , ShuQing Deng , JianPing Liu , Yong Huang , Hui Yang

引用次数: 0

Application of explainable AI on deep learning-based gate length scalable IV parameter extractor for BSIM-IMG 可解释人工智能在基于深度学习的门长可扩展IV参数提取器中的应用

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-06-14 DOI: 10.1016/j.sse.2025.109154

Fredo Chavez , Jen-Hao Chen , Chien-Ting Tung , Chenming Hu , Sourabh Khandelwal

{"title":"Application of explainable AI on deep learning-based gate length scalable IV parameter extractor for BSIM-IMG","authors":"Fredo Chavez , Jen-Hao Chen , Chien-Ting Tung , Chenming Hu , Sourabh Khandelwal","doi":"10.1016/j.sse.2025.109154","DOIUrl":"10.1016/j.sse.2025.109154","url":null,"abstract":"<div><div>A new deep-learning(DL) based gate length scalable I-V parameter extraction technique for FDSOI technology on industry-standard BSIM-IMG compact model is presented. For the first time, the learning quality of DL extractors has been studied using an explainable AI technique called SHapley Additive exPlanations (SHAP). Through analysis, it is shown that the single-step DL parameter extraction can get deviated by less relevant relationships between the <span><math><mrow><mi>I</mi><mo>−</mo><mi>V</mi></mrow></math></span> region and the BSIM-IMG parameters. A multi-step DL extraction is then designed by applying expertise in BSIM-IMG model parameters. The multi-step DL extractor has a customized DL architecture that forces the DL model to learn the relevant relationship between the input <span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>D</mi></mrow></msub></math></span> datapoint and the BSIM-IMG parameters. The single- and multi-step DL extraction has been tested for measured data with gate-lengths (<span><math><msub><mrow><mi>L</mi></mrow><mrow><mi>G</mi></mrow></msub></math></span>) ranging from 52 nm to 961 nm. The multi-step DL extractor shows better accuracy in I-V and better scaling to the key electrical parameters as compared to the single-step DL parameter extraction. The developed solution has improved the accuracy, shortened extraction time, reduced the complexity, and can assist in very fast scalable model generation for FDSOI technologies.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109154"},"PeriodicalIF":1.4,"publicationDate":"2025-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144307232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0