Solid-state Electronics最新文献

Small signal PD SOI MOSFET model: considering impact ionization and self-heating effects 小信号PD SOI MOSFET模型：考虑冲击电离和自热效应

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-07-29 DOI: 10.1016/j.sse.2025.109200

Narendra Pratap Singh , Shashank Banchhor , Ashutosh Yadav , Ashwaini Goswami , Avinash Singh , Rohit Ranjan , Sudeb Dasgupta , Anand Bulusu

引用次数: 0

Spin-on dopant technology for cost-effective source/drain formation in silicon MOSFETs 硅mosfet中具有成本效益的源极/漏极形成的自旋掺杂技术

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-07-26 DOI: 10.1016/j.sse.2025.109197

E Kyoung Kim , Areum Han , Seok Ki Lee, Byeong Seon Kim, Moon Hee Kang

{"title":"Spin-on dopant technology for cost-effective source/drain formation in silicon MOSFETs","authors":"E Kyoung Kim , Areum Han , Seok Ki Lee, Byeong Seon Kim, Moon Hee Kang","doi":"10.1016/j.sse.2025.109197","DOIUrl":"10.1016/j.sse.2025.109197","url":null,"abstract":"<div><div>Spin-on dopant (SOD) technology is utilized as a cost-effective approach for forming the source and drain regions of MOSFETs. Desert Silicon P-280, a phosphorus-based dopant with a concentration of 1.9 × 10<sup>22</sup> cm<sup>−3</sup>, is used in doping. Following spin-coating at 3000 rpm for 30 s, annealing is performed at temperatures ranging from 800 to 900 °C. As the annealing temperature increases, the sheet resistance significantly decreases from 1260 to 161 Ω/sq. In contrast, the junction depth increases from 0.14 to 0.32 µm on a boron-doped silicon substrate with a resistivity of ∼1 Ω·cm. To assess the electrical performance of the MOSFETs formed using the SOD process, device simulations are performed out using Silvaco technology computer-aided design software and compared with experimental results from MOSFETs fabricated via conventional ion implantation. The results reveal that the SOD-based MOSFET exhibits a threshold voltage (V<sub>th</sub>) of ∼−0.30 V, a subthreshold swing (SS) of ∼86 mV/dec, the transconductance (g<sub>m</sub>) of ∼0.89 mA/V, along with a comparable on-state currrent. In comparison, conventional ion-implanted MOSFETs show a V<sub>th</sub> of −0.25 V, SS of 197.1 mV/dec, and g<sub>m</sub> of 0.916 mA/V. These results demonstrate that the SOD technique is a promising alternative for dopant activation and junction formation in MOSFET fabrication, offering process simplicity and cost efficiency, albeit with some trade-offs in subthreshold performance.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109197"},"PeriodicalIF":1.4,"publicationDate":"2025-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144722220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Toward full relaxation of sSOI substrates for PFET device fabrication 迈向用于pet器件制造的sSOI衬底的完全松弛

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-07-25 DOI: 10.1016/j.sse.2025.109196

N-P. Tran, F. Milesi, V-H. Le, L-D. Mohgouk Zouknak, P. Dezest, Ph. Rodriguez, L. Brunet, B. Duriez, M-C. Cyrille, C. Fenouillet-Beranger

引用次数: 0

Influence of channel conduction on capacitance characteristic in the Kelvin AC pseudo-MOS method 开尔文交流伪mos方法中沟道导通对电容特性的影响

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-07-19 DOI: 10.1016/j.sse.2025.109193

Kyohei Ueda, Shingo Sato

引用次数: 0

Simulation analysis of resist flow in contact hole shrinkage and its impact on block copolymers 接触孔收缩阻力流动及其对嵌段共聚物影响的模拟分析

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-07-18 DOI: 10.1016/j.sse.2025.109194

Sang-Kon Kim

引用次数: 0

A wideband symmetrical piezoelectric vibration sensor based on Gaussian electrode distribution with interface circuit 基于高斯电极分布和接口电路的宽带对称压电振动传感器

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-07-17 DOI: 10.1016/j.sse.2025.109195

Mehdi Aslinezhad , Sajad Hadidi , Alireza Malekijavan

{"title":"A wideband symmetrical piezoelectric vibration sensor based on Gaussian electrode distribution with interface circuit","authors":"Mehdi Aslinezhad , Sajad Hadidi , Alireza Malekijavan","doi":"10.1016/j.sse.2025.109195","DOIUrl":"10.1016/j.sse.2025.109195","url":null,"abstract":"<div><div>This paper presents a new wideband symmetrical piezoelectric vibration sensor. The vibration sensor comprises a lead-free aluminum nitride (AlN) layer on a silicon substrate. The symmetrical sensor with Gaussian electrode distribution, a unique feature, has a wide frequency range and low transverse sensitivity. The measured −3 dB bandwidth of the vibration sensor ranges from 241 Hz to 339 Hz, approximately 98 Hz. The voltage sensitivity along the Z-axis is 733 mV/g with a linearity of <em>R<sup>2</sup> = 1</em>. The maximum generated power is 26.4 nW at an optimal load resistance, which indicates the potential to extend the battery lifetime. Notably, the transverse sensitivity decreases from 3.75 mV/g to 3.16 mV/g, representing a reduction of about 16 % compared to a conventional sensor. The transverse sensitivity ratio of the symmetrical sensor is 0.43 % (<em>S<sub>x</sub> = 0.43</em> %), less than most previous designs. A charge amplifier amplifies the generated charge by the direct piezoelectric effect and converts it to an output voltage. An active low-pass filter eliminates unwanted signals. The interface circuit has a mid-band gain of 29 dB, a −3 dB bandwidth of about 270 Hz, ranging from 80 Hz to 350 Hz, and consumes only 128 nW. The interface circuit exhibits acceptable performance under different corners (SS, FF, SF, and FS) and varying temperatures (−50 °C to +50 °C). The vibration sensor with low cross-axis sensitivity can be used for high-precision measurements, and the ultra-low-power interface circuit can resolve charging requirements.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109195"},"PeriodicalIF":1.4,"publicationDate":"2025-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144686878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cu2ZnSnS4-Cu9S5 heterojunction counter electrode for quantum dot-sensitized solar cells 量子点敏化太阳能电池用Cu2ZnSnS4-Cu9S5异质结对电极

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-07-14 DOI: 10.1016/j.sse.2025.109190

Huanying Yang , Shixin Chen

{"title":"Cu2ZnSnS4-Cu9S5 heterojunction counter electrode for quantum dot-sensitized solar cells","authors":"Huanying Yang , Shixin Chen","doi":"10.1016/j.sse.2025.109190","DOIUrl":"10.1016/j.sse.2025.109190","url":null,"abstract":"<div><div>Counter electrodes (CEs) are key components for collecting external circuit electrons and catalyzing reduced electrolytes in quantum dot-sensitized solar cells (QDSSCs). Hence, inquiry into heterojunction CEs with gradient potential energy can positively impact the charge transport of QDSSCs. In this work, a Cu<sub>2</sub>ZnSnS<sub>4</sub>-Cu<sub>9</sub>S<sub>5</sub> heterojunction was designed as the CE for QDSSCs with CdS/CdSe quantum dots, and a Cu<sub>9</sub>S<sub>5</sub> CE was fabricated for comparison. Compared to the Cu<sub>9</sub>S<sub>5</sub> CE, QDSSCs based on the Cu<sub>2</sub>ZnSnS<sub>4</sub>-Cu<sub>9</sub>S<sub>5</sub> CE exhibited a significantly improved short-circuit current density (13.71 mA/cm<sup>2</sup>) and power conversion efficiency (3.27 %). The electrochemical impedance spectroscopy and Tafel polarization results revealed that the device containing the Cu<sub>2</sub>ZnSnS<sub>4</sub>-Cu<sub>9</sub>S<sub>5</sub> CE had a lower series resistance of 7.23 Ω/cm<sup>2</sup> and higher limiting current density values. This was attributed to the high catalytic activity and superior charge transport properties of the Cu<sub>2</sub>ZnSnS<sub>4</sub>-Cu<sub>9</sub>S<sub>5</sub> heterojunction. Therefore, this work demonstrates that heterojunction CEs hold great potential in the field of optoelectronic devices.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109190"},"PeriodicalIF":1.4,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144653582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Estimation of the energy levels of the donor–acceptor polymers of organic solar cells using cyclic voltammetry 用循环伏安法估计有机太阳能电池供体-受体聚合物的能级

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-07-13 DOI: 10.1016/j.sse.2025.109192

J.F. Solís-Vivanco , Ma.C. Arenas-Arrocena , F. DeMoure-Flores , A. Velasco-Hernández , S.A. Mayén-Hernández , J. Cruz-Gómez , J. Santos-Cruz

{"title":"Estimation of the energy levels of the donor–acceptor polymers of organic solar cells using cyclic voltammetry","authors":"J.F. Solís-Vivanco , Ma.C. Arenas-Arrocena , F. DeMoure-Flores , A. Velasco-Hernández , S.A. Mayén-Hernández , J. Cruz-Gómez , J. Santos-Cruz","doi":"10.1016/j.sse.2025.109192","DOIUrl":"10.1016/j.sse.2025.109192","url":null,"abstract":"<div><div>Cyclic voltammetry is a powerful electrochemical tool for obtaining electrical properties as energy levels in polymers. Herein, it has been used to estimate the HOMO and LUMO energy levels of the donor and acceptor polymers, P3HT and PC<sub>61</sub>BM, by varying of GeS<sub>2</sub> nanoparticles, in addition to estimating other parameters such as the E<sub>g</sub>, ΔLUMO, and the theoretical V<sub>oc</sub>. The data obtained were contrasted with an experiment of P3HT:PC<sub>61</sub>BM:GeS<sub>2</sub> inverted organic solar cells to determine the influence of GeS<sub>2</sub> on the energy levels and the reported solar efficiency. Without the addition of nanoparticles to the polymer samples, an E<sub>g</sub> of 1.88 eV and 2.25 eV was obtained for P3HT and PC<sub>61</sub>BM, respectively. In addition, a V<sub>oc</sub> of 1.13 V and an E<sub>dis</sub> of 0.76 V were found. However, the addition of GeS<sub>2</sub> nanoparticles modified these values, finding a substantial improvement with 0.75 wt% of GeS<sub>2</sub> modifying the E<sub>g</sub> to 1.47 eV and 2.52 eV for the P3HT and the PC<sub>61</sub>BM, respectively, with a V<sub>oc</sub> of 1.31 V and an E<sub>dis</sub> of 0.15 V. A correlation was found between the estimated theoretical V<sub>oc</sub> with the experimental V<sub>oc</sub> and the PCE. Precisely, the best experimental result was with 0.75 wt% of nanoparticles, obtaining a maximum efficiency of 2.18 % and an average device efficiency of 1.99 %.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109192"},"PeriodicalIF":1.4,"publicationDate":"2025-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144633508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mitigating LeTID-Induced performance loss through high-frequency AC carrier injection: Architecture-dependent recovery trends in crystalline silicon solar cells 通过高频交流载流子注入减轻letid诱导的性能损失：晶体硅太阳能电池中与结构相关的恢复趋势

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-07-13 DOI: 10.1016/j.sse.2025.109191

Hasnain Yousuf , Jaljalalul Abedin Jony , Rafi ur Rahman , Alamgeer , Polgampola Chamani Madara , Muhammad Quddamah Khokhar , Shurouq Abdulqadir Mohammed , Maha Nur Aida , Mengmeng Chu , Seokjin Jang , Junhan Bae , Junsin Yi

{"title":"Mitigating LeTID-Induced performance loss through high-frequency AC carrier injection: Architecture-dependent recovery trends in crystalline silicon solar cells","authors":"Hasnain Yousuf , Jaljalalul Abedin Jony , Rafi ur Rahman , Alamgeer , Polgampola Chamani Madara , Muhammad Quddamah Khokhar , Shurouq Abdulqadir Mohammed , Maha Nur Aida , Mengmeng Chu , Seokjin Jang , Junhan Bae , Junsin Yi","doi":"10.1016/j.sse.2025.109191","DOIUrl":"10.1016/j.sse.2025.109191","url":null,"abstract":"<div><div>Light- and Elevated Temperature-Induced Degradation (LeTID) is a major reliability concern in crystalline silicon (c-Si) solar cells, especially those incorporating hydrogen-rich passivation layers. This study investigates and compares the degradation and recovery behavior of PERC, TOPCon, and HJT cells under 1-sun illumination at 85 °C. PERC cells showed the highest degradation, with a 16.6 % η loss due to hydrogen-induced formation of Fe–H and BO–H complexes. TOPCon cells experienced a 12.5 % decline, attributed to defect accumulation at the tunnel oxide and poly-Si interface. In contrast, HJT cells exhibited only a 6.3 % reduction, as hydrogen remained confined within the amorphous silicon layer. High-frequency AC carrier injection at 100 kHz was applied to promote electrical recovery. The regenerated efficiencies reached 93.1 % in PERC, 94.7 % in TOPCon, and 99.8 % in HJT cells. Recovery was driven by recombination-enhanced defect reactions that dissociate hydrogen-related defect complexes and enable re-passivation of recombination centers. This comparative analysis reveals that hydrogen dynamics, passivation stability, and defect activation pathways determine both degradation severity and recovery efficiency. The results validate AC carrier injection as an effective and architecture-adaptive strategy for mitigating LeTID and enhancing the long-term performance of c-Si photovoltaics.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109191"},"PeriodicalIF":1.4,"publicationDate":"2025-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144653581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spatially resolved ionization current measurements using an active-matrix transimpedance amplifier array 使用有源矩阵跨阻放大器阵列的空间分辨电离电流测量

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-07-11 DOI: 10.1016/j.sse.2025.109186

Yannick Schellander , Fabian Munkes , Alexander Trachtmann , Florian Anschütz , Ettore Eder , Hanna Lippmann , Meriem Mavlutova , Marius Winter , Robert Löw , Patrick Schalberger , Tilman Pfau , Harald Kübler , Norbert Fruehauf

{"title":"Spatially resolved ionization current measurements using an active-matrix transimpedance amplifier array","authors":"Yannick Schellander , Fabian Munkes , Alexander Trachtmann , Florian Anschütz , Ettore Eder , Hanna Lippmann , Meriem Mavlutova , Marius Winter , Robert Löw , Patrick Schalberger , Tilman Pfau , Harald Kübler , Norbert Fruehauf","doi":"10.1016/j.sse.2025.109186","DOIUrl":"10.1016/j.sse.2025.109186","url":null,"abstract":"<div><div>In a previous paper by our research group, high-resolution continuous wave (CW) laser spectroscopy was performed on Rydberg states in nitric oxide <span><span>[1]</span></span>. Special focus was on the behavior of these states in an electric field with variable strength. In contrast to theory, ionization current measurements show states with no frequency shift for high electric field strengths. Some states seem to split into a shifted and an unshifted line. The reason for this effect is most likely an inhomogeneous electric field distribution. This is caused by field attenuations near the cell walls resulting from charge carrier accumulations on these. Therefore, charge carriers generated near the cell walls experience a much lower electric field than expected. This permanent low-field contribution shows up as an unshifted state in the Stark spectra. To further investigate the charge carrier effects and prove the given explanation, spatially resolved measurements of the ionization currents are performed. These kinds of measurements are enabled by an electrode/transimpedance amplifier array based on thin-film technology. This work shows the realization and characterization of the required thin-film circuits. The focus is on the creation of current-to-voltage converting circuits using amorphous indium gallium zinc oxide as semiconductor. This on-glass electronics enabled spatially and time resolved charge measurements, giving insights into the charge carrier creation and the electric field distribution in the spectroscopy cell. Other thinkable applications of such a sensor array could be the determination of the dynamic density distribution by turbulent gas flow or in resonance-enhanced multiphoton ionization experiments.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"229 ","pages":"Article 109186"},"PeriodicalIF":1.4,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144653583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0