Solid-state Electronics最新文献

Assessment of ion-sensitivity of Si3N4 based feedback field effect transistor using snap-back characteristics 利用回跳特性评估氮化硅基反馈场效应晶体管的离子灵敏度

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-28 DOI: 10.1016/j.sse.2025.109159

Prateek Kumar , Naveen Kumar , Ankit Dixit , Md Hasan Raza Ansari , Navjeet Bagga , Navneet Gandhi , P.N. Kondekar , César Pascual García , Vihar Georgiev

引用次数: 0

Optimizing peptide detection using FET-based sensors: Integrating non-linearities of surface functionalization 利用基于fet的传感器优化肽检测：整合表面功能化的非线性

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-28 DOI: 10.1016/j.sse.2025.109161

Naveen Kumar , Ankit Dixit , Prateek Kumar , Md. Hasan Raza Ansari , Navjeet Bagga , Navneet Gandhi , P.N. Kondekar , César Pascual García , Vihar Georgiev

引用次数: 0

Cobalt-doped zinc sulfide quantum dot thin films for next-generation electronic devices: Synthesis, characterization, and switching properties 用于下一代电子器件的钴掺杂硫化锌量子点薄膜：合成、表征和开关特性

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-26 DOI: 10.1016/j.sse.2025.109146

Omkar Sharma , B.M. Priyanka , Karan Agarwal , P. Anjaneyulu , Gajanan Honnavar

{"title":"Cobalt-doped zinc sulfide quantum dot thin films for next-generation electronic devices: Synthesis, characterization, and switching properties","authors":"Omkar Sharma , B.M. Priyanka , Karan Agarwal , P. Anjaneyulu , Gajanan Honnavar","doi":"10.1016/j.sse.2025.109146","DOIUrl":"10.1016/j.sse.2025.109146","url":null,"abstract":"<div><div>In this communication we comprehensively study the synthesis and characterization of Cobalt-doped ZnS quantum dots with controlled size and composition as a possible candidate for Resistive random access memory (RRAM). The pristine ZnS QDs and ZnS QDs with 10 % and 15 % cobalt doped are synthesized using sol- gel process. The basic characterization XRD and TEM confirms the formation of the material, and their particle size is found to be between 4.14 nm to 5.93 nm. The band gap of the particles is found out using UV–Visible Spectroscopy. Further, Polyvinyl alcohol (PVA) polymer composite solutions are prepared using synthesized QDs. Further, their thin films are deposited through spin coating technique and their corresponding devices ITO/PVA/Ag, ITO/Co (10 %)-ZnS QDs: PVA/Ag and ITO/Co (15 %)-ZnS QDs: PVA/Ag are fabricated. The current–voltage (I-V) measurements revealed the existence of resistive switching in all devices. Regardless of the direction of the voltage sweep, the device will exhibit write-once-read-many (WORM) memory behavior as a result of the incorporation of Co-ZnS QDs into the PVA matrix. A noticeable and enhanced resistive switching behavior in the devices was the outcome of the increased cobalt doping. The ITO/Co (15 %)-ZnS QDs: PVA/Ag device displayed an ON/OFF ratio of one order with a good data retention of 2000 s and endurance of about 2000 cycles. Ultimately, the I-V fitting demonstrates that the WORM memory in the devices is caused by the space charge area that forms at the interface between the electrode and the active material.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"228 ","pages":"Article 109146"},"PeriodicalIF":1.4,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144147006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Rigorous analysis on the operating mechanism of gate-injection ferroelectric flash 对栅喷射铁电闪动的工作机理进行了严密的分析

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-23 DOI: 10.1016/j.sse.2025.109153

Yelim Jeon , Hyungju Noh , Seungwon Go , Sangwan Kim

{"title":"Rigorous analysis on the operating mechanism of gate-injection ferroelectric flash","authors":"Yelim Jeon , Hyungju Noh , Seungwon Go , Sangwan Kim","doi":"10.1016/j.sse.2025.109153","DOIUrl":"10.1016/j.sse.2025.109153","url":null,"abstract":"<div><div>In this paper, the operation mechanism of gate-injection ferroelectric flash (GI-FeFlash) is studied through technology computer-aided design (TCAD) simulations. It reveals that GI-FeFlash exhibits an extraordinarily large memory window (MW) compared to the sum of MWs of a ferroelectric field-effect transistor (FeFET) and a charge trap flash (CTF), attributed to the synergistic effects between the two mechanisms: a polarization switching and a charge trapping. These synergistic effects can be analyzed by two phenomena: 1) a trap-assisted polarization switching (TAPS) and 2) a polarization-assisted charge trapping (PACT). In the case of TAPS, the trapped charges in the charge trap layer (CTL) enhance the polarization in the ferroelectric (FE) layer by increasing the electric field of the blocking oxide (i.e., FE layer). On the other hand, in the case of PACT, the polarization in the FE layer helps the charge injection into the CTL by increasing the electric field of the tunnel oxide (TO). Furthermore, TAPS and PACT are also verified by the analytical models based on Gauss’s law. Therefore, GI-FeFlash can achieve a large MW (∼14.9 V) with a low-program/erase voltage and a fast-speed operation through the complementary relations between the two mechanisms.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"228 ","pages":"Article 109153"},"PeriodicalIF":1.4,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144147005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Machine learning impassioned assessment of trap states driven band bending analysis in organic Schottky formation 有机肖特基地层中阱态驱动能带弯曲分析的机器学习激情评估

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-13 DOI: 10.1016/j.sse.2025.109144

Kushal Chakraborty , V. Chandrasekar , Dhananjay Kumar , Nabin Baran Manik

{"title":"Machine learning impassioned assessment of trap states driven band bending analysis in organic Schottky formation","authors":"Kushal Chakraborty , V. Chandrasekar , Dhananjay Kumar , Nabin Baran Manik","doi":"10.1016/j.sse.2025.109144","DOIUrl":"10.1016/j.sse.2025.109144","url":null,"abstract":"<div><div>Band bending at metal–semiconductor junction bears significant consequences providing analytical explanation of built-in-voltage (V<sub>bi</sub>) in current–voltage (I-V) relationship. Knowing the band bending impact on charge transition, a theoretical model has been developed which relates the parameter with geometrical conductance (<span><math><mrow><msub><mi>g</mi><mi>m</mi></msub></mrow></math></span>) by introducing modification in empirical Mott-Gurney law. The theoretical relation is validated with the approximated outcome of organic semiconductor-based prototype simulated device structure ranges between 100 nm to 900 nm. The same has been examined on two different experimental semiconducting dye based organic diode. For each case, the result reveals a greater range of consistency satisfying a well trend of analogy with theoretically developed equation. Band bending (b) shows inverse linearity with <span><math><mrow><msub><mi>g</mi><mi>m</mi></msub></mrow></math></span> at increasing voltage, whereas the following investigation explore its proportional nature with increasing device thickness (L). Since organic materials are trap prone and its influence on charge conduction is well known, therefore, to predict the impact of trap distributions on b, machine-learning based modeling approaches has been undertaken to leverage the prediction in a reliable way to quantify the trap energy (E<sub>T</sub>). The comparison among different output set of computational modelling approach leads towards a non-linear approximation of b with variation of E<sub>T</sub> and is best applicable at 700 nm device thickness. Furthermore, different linear and non-linear Machine Learning algorithm has been trained for validation employing the considered sample thickness in experimental dye-based devices and based on the assessment of performance metrics, the influence of E<sub>T</sub> on variation of b has been detected.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"228 ","pages":"Article 109144"},"PeriodicalIF":1.4,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144069854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanowire behavior under the influence of Polyoxometalates: A Comparative study of depletion and enhancement modes 多金属氧酸盐影响下纳米线的行为：损耗和增强模式的比较研究

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-11 DOI: 10.1016/j.sse.2025.109145

Ankit Dixit , Ramesh Ghosh , Jake Jacobs , Naveen Kumar , Laia Vila-Nadal , Asen Asenov , Douglas J. Paul , Vihar Georgiev

{"title":"Nanowire behavior under the influence of Polyoxometalates: A Comparative study of depletion and enhancement modes","authors":"Ankit Dixit , Ramesh Ghosh , Jake Jacobs , Naveen Kumar , Laia Vila-Nadal , Asen Asenov , Douglas J. Paul , Vihar Georgiev","doi":"10.1016/j.sse.2025.109145","DOIUrl":"10.1016/j.sse.2025.109145","url":null,"abstract":"<div><div>Polyoxometalates (POMs) are one of the most adaptable families of inorganic molecular materials due to the wide variety of shapes and properties they can exhibit. In this paper, a thorough study has been carried out on the effect of the position of the POMs molecule on the nanowire transistor’s surface with the nanowire transistor’s different operating modes. The aims of this research paper are as follows: (a) to investigate the relationship between device operation and sensitivity with respect to the mode of operation i.e. depletion and enhancement mode (b) to establish the impact on the electrical parameters such as electric field and potential in the nanowire (NW) and (c) to execute sensitivity analysis of the device with respect to the position of the POMs on the device surface. Our simulation work reported here provides design rules for fabricating the optimized device geometry with improved performance to be used for sensing applications in molecular based electronic devices.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"228 ","pages":"Article 109145"},"PeriodicalIF":1.4,"publicationDate":"2025-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Achieving long-term and short-term synaptic plasticity in adaptive ANNs: A memristor circuit design with switchable dual-mode 在自适应神经网络中实现长期和短期突触可塑性：一种可切换双模的忆阻电路设计

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-10 DOI: 10.1016/j.sse.2025.109129

Yanliang Jin, Xiaochuan Xu, Yuan Gao, Shengli Liu

引用次数: 0

Interface roughness in Resonant Tunnelling Diodes for physically unclonable functions 物理不可克隆功能的共振隧道二极管的界面粗糙度

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-07 DOI: 10.1016/j.sse.2025.109131

Pranav Acharya, Vihar Georgiev

{"title":"Interface roughness in Resonant Tunnelling Diodes for physically unclonable functions","authors":"Pranav Acharya, Vihar Georgiev","doi":"10.1016/j.sse.2025.109131","DOIUrl":"10.1016/j.sse.2025.109131","url":null,"abstract":"<div><div>Resonant Tunnelling Diodes with Interface Roughness (IR) were investigated for their potential as components of Physically Uncloneable Functions (PUFs). A comparison of an RTD with IR, against a ‘smooth’ device without IR, showed a reduction in current and Peak to Valley Current Ratio (PVCR) between the resonant peak and valley currents <span><math><mrow><msub><mrow><mi>I</mi></mrow><mrow><mi>r</mi></mrow></msub><mo>/</mo><msub><mrow><mi>I</mi></mrow><mrow><mi>v</mi></mrow></msub></mrow></math></span>. Furthermore, IR resulted in a perturbation of the Negative Differential Region (NDR) of the IV characteristic to higher bias. This perturbation was due to IR effectively thickening barriers and thereby narrowing the Quantum Well (QW) and leading to a higher ground state QW energy. Variation of correlation length <span><math><msub><mrow><mi>L</mi></mrow><mrow><mi>C</mi></mrow></msub></math></span> and roughness asperity <span><math><msub><mrow><mi>Δ</mi></mrow><mrow><mi>R</mi><mi>M</mi><mi>S</mi></mrow></msub></math></span> for batches of 25 randomly generated RTDs with IR showed that increasing <span><math><msub><mrow><mi>Δ</mi></mrow><mrow><mi>R</mi><mi>M</mi><mi>S</mi></mrow></msub></math></span> decreased mean PVCR and increased the standard deviation of the resonant peak voltage <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>r</mi></mrow></msub></math></span> and current <span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>r</mi></mrow></msub></math></span>. 150 RTDs with an <span><math><msub><mrow><mi>L</mi></mrow><mrow><mi>C</mi></mrow></msub></math></span> of 7.5 nm and <span><math><msub><mrow><mi>Δ</mi></mrow><mrow><mi>R</mi><mi>M</mi><mi>S</mi></mrow></msub></math></span> of 0.3 nm resulted in a min-entropy of 1.275 bits, showing that 100 RTDs could idealistically compose a PUF encoding 127 bits.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"228 ","pages":"Article 109131"},"PeriodicalIF":1.4,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143928199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Epitaxial p+pn+ vertical short diodes for microbolometers 微辐射热计用外延p+pn+垂直短二极管

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-06 DOI: 10.1016/j.sse.2025.109123

R.M.R. Kubica , A. Albouy , M. Le Cocq , F. Gonzatti , F. Balestra , P. Leduc

引用次数: 0

Excimer laser annealing of boron thin-films to fabricate large-area low-defect p+ Si regions 硼薄膜准分子激光退火制备大面积低缺陷p+ Si区

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-05 DOI: 10.1016/j.sse.2025.109143

Vinayak V. Hassan, Asma Attariabad, Lis K. Nanver

{"title":"Excimer laser annealing of boron thin-films to fabricate large-area low-defect p+ Si regions","authors":"Vinayak V. Hassan, Asma Attariabad, Lis K. Nanver","doi":"10.1016/j.sse.2025.109143","DOIUrl":"10.1016/j.sse.2025.109143","url":null,"abstract":"<div><div>Boron layers deposited by chemical vapor deposition at 700 °C are exposed to 308 nm excimer laser annealing (ELA). The non-annealed B-deposition is commonly used to form radiation hard p<sup>+</sup>n PureB photodiodes that have nm-shallow junction depths with low dark currents, i.e., the PureB anode region has a high Gummel number. Here a B-layer thickness ranging from a monolayer to 7 nm was studied for deposition in oxide windows to lightly-doped n-Si wafers, and diode contacting was achieved with an Al/1%Si interconnect layer. The focus was placed on a 1-nm-thin B-layer that, after ELA at fluences from 400 to 900 mJ/cm<sup>2</sup>, delivered ideal diodes with anode Gummel numbers at least as high as PureB counterparts. Fluences above 750 mJ/cm<sup>2</sup> were necessary for melting of the Si to achieve p-region sheet resistance <100 Ω/sq. The maximum active doping level was 2.3 × 10<sup>21</sup> atoms/cm<sup>3</sup> in the melt zone, providing a sheet resistance of 25 Ω/sq at a junction depth of 85 nm for a fluence of 900 mJ/cm<sup>2</sup>. At 600 mJ/cm<sup>2</sup>, about a monolayer of B bonded to Si at the interface remained. This rendered a photodiode with an optimal responsivity of 0.16 A/W at 406 nm and 0.33 A/W at 670 nm wavelengths.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"228 ","pages":"Article 109143"},"PeriodicalIF":1.4,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143917588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0