Solid-state Electronics最新文献_第10页

Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures 全面评估在高温下工作的 SOI 叠层纳米线 nMOSFET 中的栅极诱导漏极泄漏

IF 1.7 4区物理与天体物理

Solid-state Electronics Pub Date : 2024-02-01 DOI: 10.1016/j.sse.2024.108865

Michelly de Souza , Antonio Cerdeira , Magali Estrada , Mikaël Cassé , Sylvain Barraud , Maud Vinet , Olivier Faynot , Marcelo A. Pavanello

引用次数: 0

Preconditioning of Ohmic p-GaN power HEMT for reproducible Vth measurements 预调节欧姆 p-GaN 功率 HEMT 以实现可重现的 Vth 测量

IF 1.7 4区物理与天体物理

Solid-state Electronics Pub Date : 2024-01-30 DOI: 10.1016/j.sse.2024.108868

L. Ghizzo , D. Trémouilles , F. Richardeau , G. Guibaud

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Influence of gate-source/drain overlap on FeFETs 栅源/漏极重叠对 FeFET 的影响

IF 1.7 4区物理与天体物理

Solid-state Electronics Pub Date : 2024-01-26 DOI: 10.1016/j.sse.2024.108862

Changha Kim , Dong-Oh Kim , Woo Young Choi

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Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing 通过成型气体退火提高 InAlN/GaN 高电子迁移率晶体管的电气性能

IF 1.7 4区物理与天体物理

Solid-state Electronics Pub Date : 2024-01-19 DOI: 10.1016/j.sse.2024.108861

Siheng Chen , Peng Cui , Handoko Linewih , Kuan Yew Cheong , Mingsheng Xu , Xin Luo , Liu Wang , Jiuji Sun , Jiacheng Dai , Jisheng Han , Xiangang Xu

{"title":"Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing","authors":"Siheng Chen , Peng Cui , Handoko Linewih , Kuan Yew Cheong , Mingsheng Xu , Xin Luo , Liu Wang , Jiuji Sun , Jiacheng Dai , Jisheng Han , Xiangang Xu","doi":"10.1016/j.sse.2024.108861","DOIUrl":"10.1016/j.sse.2024.108861","url":null,"abstract":"<div>The surface electronic states and defects of gallium nitride based high-electron-mobility transistors (HEMTs) play a critical role affecting channel electron density, electron mobility, leakage current, radio frequency (RF) power output and power added efficiency of devices. This article demonstrates the improved surface properties of InAlN/GaN HEMTs through forming gas (FG) annealing, resulting in a significantly improved electrical properties. The X-ray photoelectron spectra reveals a reduction of surface native oxide after FG H2/N2 annealing whereby the amount of Ga–O bonds is decreased. Compared with N2 annealing, an on-resistance of 1.68 Ω·mm, a subthreshold swing of 118 mV/dec, a transconductance peak of 513 mS/mm, a gate diode breakdown voltage of surpassing 42 V, and a high current/power gain cutoff frequency (fT/fmax) of 165/165 GHz are achieved by the 50-nm InAlN/GaN HEMT on Si substrate.</div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"213 ","pages":"Article 108861"},"PeriodicalIF":1.7,"publicationDate":"2024-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139509548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum information processing in electrically defined Silicon triple quantum dot systems 电定义硅三量子点系统中的量子信息处理

IF 1.7 4区物理与天体物理

Solid-state Electronics Pub Date : 2024-01-15 DOI: 10.1016/j.sse.2024.108863

Ji-Hoon Kang, Hoon Ryu

{"title":"Quantum information processing in electrically defined Silicon triple quantum dot systems","authors":"Ji-Hoon Kang, Hoon Ryu","doi":"10.1016/j.sse.2024.108863","DOIUrl":"10.1016/j.sse.2024.108863","url":null,"abstract":"<div>Quantum bits (qubits) operations in electrically defined Silicon (Si) triple quantum dots (TQDs) are computationally investigated to elevate the potential of TQD structure as a platform for quantum information processing. Employing a realistic Si<math><mo>/</mo></math>Si-germanium heterostructure as a target model, device simulations are conducted to secure an initialized qubit state. Basic programmability is verified through implementation of individual qubit operations and 2-qubit entangling operations between neighboring QDs. Constructing a gate sequence composed of 1-qubit and 2-qubit blocks, then, we not only generate three-qubit Greenberger–Horne–Zeilinger state, but also quantify the degradation of state fidelity under the inevitable inaccuracy which are incorporated in the dominant factors of spin-qubit Hamiltonian. Presenting engineering details that are hard to be carried by simulations based on the first principle theory, this work can be served as a practical guideline for designs of scalable quantum processors with electron spin-qubits in Si QD platforms.</div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"213 ","pages":"Article 108863"},"PeriodicalIF":1.7,"publicationDate":"2024-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139470083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Voltage ramp stress based lifetime-prediction model of advanced Al-doped HfO2 dielectric for 2.5D MIMCAPs 基于电压斜坡应力的 2.5d mimcaps 高级掺铝 hfo2 介电寿命预测模型

IF 1.7 4区物理与天体物理

Solid-state Electronics Pub Date : 2024-01-15 DOI: 10.1016/j.sse.2024.108864

Corinna Fohn , Emmanuel Chery , Kristof Croes , Michele Stucchi , Valeri Afanas’ev

引用次数: 0

Deep spiking neural networks with integrate and fire neuron using steep switching device 利用陡峭开关设备整合和发射神经元的深度尖峰神经网络

IF 1.7 4区物理与天体物理

Solid-state Electronics Pub Date : 2024-01-12 DOI: 10.1016/j.sse.2024.108860

Sung Yun Woo , Sangyeon Pak , Sung-Tae Lee

{"title":"Deep spiking neural networks with integrate and fire neuron using steep switching device","authors":"Sung Yun Woo , Sangyeon Pak , Sung-Tae Lee","doi":"10.1016/j.sse.2024.108860","DOIUrl":"10.1016/j.sse.2024.108860","url":null,"abstract":"<div>Deep learning has shown impressive capabilities in tasks like speech recognition and image classification. However, modern deep neural networks often demand a significant number of weights and extensive computational resources, creating efficiency challenges for applications on edge devices. To address these issues, researchers have introduced deep spiking neural networks (DSNNs) that leverage specialized hardware for synapses and neurons. DSNNs offer a potential solution by improving efficiency in edge-device applications. In this paper, the hardware based DSNN with integrate and fire neuron using steep switching device was investigated. We propose integrate and fire neuron using steep switching device to implement rate coding as input encoding method. Because the steep switching device has double-gate, the threshold voltage of the neuron circuits can be adaptively controlled, which changes the rates of input pulse. Hence, the adjustment of the threshold of neuron can be employed to mitigate the accuracy deterioration resulting from the transformation from deep neural networks (DNNs) to DSNNs. In addition, the off-current of proposed integrate and fire neuron circuit decreases significantly as the steep switching device has steep subthreshold swing. A system simulation of a hardware based DSNN shows that the adjustable threshold of the neuron circuit can achieve a high inference accuracy of 98.36 % which is comparable to that obtained with software based DNN.</div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"214 ","pages":"Article 108860"},"PeriodicalIF":1.7,"publicationDate":"2024-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139470081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Performance potential of transistors based on tellurium nanowire arrays: A quantum transport study 基于碲纳米线阵列的晶体管的性能潜力：量子传输研究

IF 1.7 4区物理与天体物理

Solid-state Electronics Pub Date : 2024-01-09 DOI: 10.1016/j.sse.2024.108859

Ning Yang, Jing Guo

{"title":"Performance potential of transistors based on tellurium nanowire arrays: A quantum transport study","authors":"Ning Yang, Jing Guo","doi":"10.1016/j.sse.2024.108859","DOIUrl":"10.1016/j.sse.2024.108859","url":null,"abstract":"<div>Low-dimensional nanomaterials provide promising material platforms for aggressively scaled transistor technologies. We assess the performance potential of transistors based on an array of Tellurium nanowires (TNWs), by parameterizing a machine-learning (ML) tight-binding model with quantum transport device simulations. It has been shown that a transistor based on a parallel array of carbon nanotubes (CNTs) can have excellent on-state performance, but the small bandgap limits the transistor scalability and off-state performance. Our results indicate that compared to the CNT array FETs, the TNW array FETs have significantly suppressed ambipolar transport and improved subthreshold characteristics. The TNW array FET has the potential to achieve a near-ideal subthreshold swing (SS) close to 60 mV/dec, a very large on–off ratio (>109), and low source-drain leakage current at a 10 nm-scale channel length, due to its excellent gate electrostatics with a gate-all-around (GAA) structure, larger band gap and reduced quantum–mechanical tunneling. The TNW array FET also shows excellent scalability with a SS below 100 mV/dec when the channel length is further scaled down to 5 nm. Its larger bandgap and heavier effective mass significantly reduce quantum tunneling. This mechanism contributes to improved subthreshold and lower leakage but also highlights the need to develop low Schottky barrier contacts for TNWs.</div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"213 ","pages":"Article 108859"},"PeriodicalIF":1.7,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139421211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Silicon nitride resistance switching MIS cells doped with silicon atoms 掺杂硅原子的氮化硅电阻开关 MIS 电池

IF 1.7 4区物理与天体物理

Solid-state Electronics Pub Date : 2024-01-03 DOI: 10.1016/j.sse.2023.108851

A. Mavropoulis , N. Vasileiadis , C. Bonafos , P. Normand , V. Ioannou-Sougleridis , G. Ch. Sirakoulis , P. Dimitrakis

引用次数: 0

Bismuth tungstate nanosheets sensors based on Temkin adsorption model for triethylamine detection 基于 Temkin 吸附模型的钨酸铋纳米片传感器用于检测三乙胺

IF 1.7 4区物理与天体物理

Solid-state Electronics Pub Date : 2023-12-28 DOI: 10.1016/j.sse.2023.108850

Zhongyuan Wu , Fengyu Luo , Xiaohong Zheng , Jin Liu

{"title":"Bismuth tungstate nanosheets sensors based on Temkin adsorption model for triethylamine detection","authors":"Zhongyuan Wu , Fengyu Luo , Xiaohong Zheng , Jin Liu","doi":"10.1016/j.sse.2023.108850","DOIUrl":"10.1016/j.sse.2023.108850","url":null,"abstract":"<div>Nanostructured Bi2WO6 and Bi2W2O9 were synthesized using a hydrothermal method. The crystal structure, morphology, and specific surface area were analyzed via X-ray diffraction, scanning electron microscopy, Brunauer–Emmett–Teller and X-ray photoelectron spectroscopy (XPS) analysis, respectively. The characterization results show that Bi2WO6 has a higher specific surface area and a larger pore size than Bi2W2O9, which promote oxygen adsorption and surface reactions. Gas-sensitive tests show that both sensors have a lower detection limit of 2.5 ppm as well as short response and recovery times for detecting triethylamine (TEA). They also have excellent cycling and long-term stability at 180 °C and exhibit excellent gas-sensing performance. The Bi2WO6 sensor has a higher response and sensitivity, as well as better selectivity, than the Bi2W2O9 sensor, which is related to the uniformly layered structure of the former material. We have analyzed the mechanism that enables these sensors to detect TEA and have used the Temkin adsorption model to explain the linear relationship. We find that this model provides an excellent theoretical foundation for fitting the working curve of these semiconductor sensors.</div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"213 ","pages":"Article 108850"},"PeriodicalIF":1.7,"publicationDate":"2023-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139065426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0