Solid-state Electronics最新文献_第9页

Interface roughness in Resonant Tunnelling Diodes for physically unclonable functions 物理不可克隆功能的共振隧道二极管的界面粗糙度

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-07 DOI: 10.1016/j.sse.2025.109131

Pranav Acharya, Vihar Georgiev

{"title":"Interface roughness in Resonant Tunnelling Diodes for physically unclonable functions","authors":"Pranav Acharya, Vihar Georgiev","doi":"10.1016/j.sse.2025.109131","DOIUrl":"10.1016/j.sse.2025.109131","url":null,"abstract":"<div><div>Resonant Tunnelling Diodes with Interface Roughness (IR) were investigated for their potential as components of Physically Uncloneable Functions (PUFs). A comparison of an RTD with IR, against a ‘smooth’ device without IR, showed a reduction in current and Peak to Valley Current Ratio (PVCR) between the resonant peak and valley currents <math><mrow><msub><mrow><mi>I</mi></mrow><mrow><mi>r</mi></mrow></msub><mo>/</mo><msub><mrow><mi>I</mi></mrow><mrow><mi>v</mi></mrow></msub></mrow></math>. Furthermore, IR resulted in a perturbation of the Negative Differential Region (NDR) of the IV characteristic to higher bias. This perturbation was due to IR effectively thickening barriers and thereby narrowing the Quantum Well (QW) and leading to a higher ground state QW energy. Variation of correlation length <math><msub><mrow><mi>L</mi></mrow><mrow><mi>C</mi></mrow></msub></math> and roughness asperity <math><msub><mrow><mi>Δ</mi></mrow><mrow><mi>R</mi><mi>M</mi><mi>S</mi></mrow></msub></math> for batches of 25 randomly generated RTDs with IR showed that increasing <math><msub><mrow><mi>Δ</mi></mrow><mrow><mi>R</mi><mi>M</mi><mi>S</mi></mrow></msub></math> decreased mean PVCR and increased the standard deviation of the resonant peak voltage <math><msub><mrow><mi>V</mi></mrow><mrow><mi>r</mi></mrow></msub></math> and current <math><msub><mrow><mi>I</mi></mrow><mrow><mi>r</mi></mrow></msub></math>. 150 RTDs with an <math><msub><mrow><mi>L</mi></mrow><mrow><mi>C</mi></mrow></msub></math> of 7.5 nm and <math><msub><mrow><mi>Δ</mi></mrow><mrow><mi>R</mi><mi>M</mi><mi>S</mi></mrow></msub></math> of 0.3 nm resulted in a min-entropy of 1.275 bits, showing that 100 RTDs could idealistically compose a PUF encoding 127 bits.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"228 ","pages":"Article 109131"},"PeriodicalIF":1.4,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143928199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Epitaxial p+pn+ vertical short diodes for microbolometers 微辐射热计用外延p+pn+垂直短二极管

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-06 DOI: 10.1016/j.sse.2025.109123

R.M.R. Kubica , A. Albouy , M. Le Cocq , F. Gonzatti , F. Balestra , P. Leduc

引用次数: 0

Excimer laser annealing of boron thin-films to fabricate large-area low-defect p+ Si regions 硼薄膜准分子激光退火制备大面积低缺陷p+ Si区

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-05 DOI: 10.1016/j.sse.2025.109143

Vinayak V. Hassan, Asma Attariabad, Lis K. Nanver

{"title":"Excimer laser annealing of boron thin-films to fabricate large-area low-defect p+ Si regions","authors":"Vinayak V. Hassan, Asma Attariabad, Lis K. Nanver","doi":"10.1016/j.sse.2025.109143","DOIUrl":"10.1016/j.sse.2025.109143","url":null,"abstract":"<div><div>Boron layers deposited by chemical vapor deposition at 700 °C are exposed to 308 nm excimer laser annealing (ELA). The non-annealed B-deposition is commonly used to form radiation hard p+n PureB photodiodes that have nm-shallow junction depths with low dark currents, i.e., the PureB anode region has a high Gummel number. Here a B-layer thickness ranging from a monolayer to 7 nm was studied for deposition in oxide windows to lightly-doped n-Si wafers, and diode contacting was achieved with an Al/1%Si interconnect layer. The focus was placed on a 1-nm-thin B-layer that, after ELA at fluences from 400 to 900 mJ/cm2, delivered ideal diodes with anode Gummel numbers at least as high as PureB counterparts. Fluences above 750 mJ/cm2 were necessary for melting of the Si to achieve p-region sheet resistance <100 Ω/sq. The maximum active doping level was 2.3 × 1021 atoms/cm3 in the melt zone, providing a sheet resistance of 25 Ω/sq at a junction depth of 85 nm for a fluence of 900 mJ/cm2. At 600 mJ/cm2, about a monolayer of B bonded to Si at the interface remained. This rendered a photodiode with an optimal responsivity of 0.16 A/W at 406 nm and 0.33 A/W at 670 nm wavelengths.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"228 ","pages":"Article 109143"},"PeriodicalIF":1.4,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143917588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing unconventional trilayer SOTs for field-free switching 优化用于无场开关的非常规三层sot

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-05-02 DOI: 10.1016/j.sse.2025.109135

Nils Petter Jørstad , Wolfgang Goes , Siegfried Selberherr , Viktor Sverdlov

引用次数: 0

Implementation and investigation of high voltage CMOS device in advanced Sub-90 nm node processes 先进sub - 90nm节点制程中高压CMOS器件的实现与研究

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-04-28 DOI: 10.1016/j.sse.2025.109142

Xin Huang , Yintong Zhang , Zhaozhao Xu , Ziquan Fang , Donghua Liu , Wensheng Qian

引用次数: 0

Preliminary results on industrial 28nm FD-SOI phase change memory at cryogenic temperature 低温下工业28nm FD-SOI相变存储器的初步结果

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-04-27 DOI: 10.1016/j.sse.2025.109141

Philippe Galy , Joao Henrique Quintino Palhares , Lorena Anghel , Yann Beilliard , Fabien Alibart , Dominique Drouin , Jury Sandrini , Franck Arnaud

引用次数: 0

Investigation into the impact of source-drain series resistance on electrical parameters of AlGaN/GaN high electron mobility transistors 源漏串联电阻对高电子迁移率AlGaN/GaN晶体管电学参数影响的研究

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-04-26 DOI: 10.1016/j.sse.2025.109138

Eduardo Canga Panzo , Nilton Graziano , Eddy Simoen , Maria Glória Caño de Andrade

{"title":"Investigation into the impact of source-drain series resistance on electrical parameters of AlGaN/GaN high electron mobility transistors","authors":"Eduardo Canga Panzo , Nilton Graziano , Eddy Simoen , Maria Glória Caño de Andrade","doi":"10.1016/j.sse.2025.109138","DOIUrl":"10.1016/j.sse.2025.109138","url":null,"abstract":"<div><div>This research investigates the impact of source-drain series resistance (RSD) AlGaN/GaN high-electron-mobility transistors (HEMTs). Initially, the influence of RSD was analyzed in devices with varying geometries (Length and width; Lg and W) as well as in devices with identical dimensions but fabricated using different gate metal manufacturing techniques. Subsequently, the effect of RSD on key parameters, including carrier mobility (μn), effective mobility (<math><msub><mi>μ</mi><mrow><mi>eff</mi></mrow></msub></math>) and field effect mobility (<math><msub><mi>μ</mi><mrow><mi>FE</mi></mrow></msub></math>), drain current (<math><msub><mi>I</mi><mi>d</mi></msub></math>), output conductance (<math><msub><mi>g</mi><mi>d</mi></msub></math>), transconductance (<math><msub><mi>g</mi><mi>m</mi></msub></math>), threshold voltage (<math><msub><mi>V</mi><mi>T</mi></msub></math>) and subthreshold slope (<math><mi>S</mi></math>) was assessed. The results reveal that RSD tends to decrease in transistors with lower Lg and higher W, highlighting a significant correlation with the channel’s geometric structure. Additionally, transistors employing different gate metal splits exhibited variations in RSD. The results further revealed that a lower RSD enhances μn, <math><msub><mi>μ</mi><mrow><mi>eff</mi></mrow></msub></math>, <math><msub><mi>μ</mi><mrow><mi>FE</mi></mrow></msub></math>, <math><msub><mi>I</mi><mi>d</mi></msub></math>, <math><msub><mi>g</mi><mi>d</mi></msub></math>, <math><msub><mi>g</mi><mi>m</mi></msub></math>, and <math><mrow><mi>S</mi><mo>,</mo></mrow></math> while reducing <math><msub><mi>V</mi><mi>T</mi></msub></math>.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"228 ","pages":"Article 109138"},"PeriodicalIF":1.4,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143899262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Performance of Pulse-Programmed memristive crossbar array with bimodally distributed stochastic synaptic weights 具有双峰分布随机突触权的脉冲编程记忆栅阵列的性能

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-04-24 DOI: 10.1016/j.sse.2025.109128

Nadine Dersch , Eduardo Perez , Christian Wenger , Christian Roemer , Mike Schwarz , Benjamin Iniguez , Alexander Kloes

引用次数: 0

Operation of junctionless nanowire transistors down to 4.2 Kelvin 操作低至4.2开尔文的无结纳米线晶体管

IF 1.4 4区物理与天体物理

Solid-state Electronics Pub Date : 2025-04-23 DOI: 10.1016/j.sse.2025.109133

F.E. Bergamaschi , J.A. Matos , M. de Souza , S. Barraud , M. Cassé , O. Faynot , M.A. Pavanello

引用次数: 0

Investigation on the performance limits of Dirac-source FETs 狄拉克源场效应管性能极限的研究