Solid-state Electronics最新文献

{"title":"Editorial. Special issue. EUROSOI-ULIS 2023","authors":"Benjamin Iniguez, Francisco Gamiz","doi":"10.1016/j.sse.2024.109030","DOIUrl":"10.1016/j.sse.2024.109030","url":null,"abstract":"","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"224 ","pages":"Article 109030"},"PeriodicalIF":1.4,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143147210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Equivalence of proton-induced displacement damage in InP-based HEMT","authors":"Bo Liu ,&nbsp;Yong-Bo Su ,&nbsp;Ren-Jie Liu ,&nbsp;Zhi Jin ,&nbsp;Chao Zhang ,&nbsp;Ying-Hui Zhong","doi":"10.1016/j.sse.2024.109048","DOIUrl":"10.1016/j.sse.2024.109048","url":null,"abstract":"<div><div>Radiation experiments of 560 keV, 2 MeV, and 10 MeV proton have been performed on InP-based High Electron Mobility Transistors (HEMTs), the damage mechanisms and damage equivalence are systematically studied. The irradiated devices have exhibited the reduction of transconductance, the positive shift of threshold voltage, and the reduction in drain-source current. Nonionizing energy loss (NIEL) was calculated to investigate the relationship between the degradation of the device and proton energy, but the damage factors of the devices do not exhibit a perfect linear relationship with NIEL across all the energies. The deviation mainly lies in the stopping power of the target material for incident protons. An improved NIEL calculation method is proposed based on Geant4 simulation software, which eliminates the influence of stopping power. And thus, the equivalence of displacement damage in InP-based HEMTs has been constructed among 560 keV, 2 MeV, and 10 MeV proton irradiation.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"224 ","pages":"Article 109048"},"PeriodicalIF":1.4,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143146759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"GatedNN: An accurate deep learning-based parameter extraction for BSIM-CMG","authors":"Guangxin Guo,&nbsp;Zhengguang Tang,&nbsp;Zhenhai Cui,&nbsp;Cong Li,&nbsp;Hailong You","doi":"10.1016/j.sse.2024.109044","DOIUrl":"10.1016/j.sse.2024.109044","url":null,"abstract":"<div><div>An enhanced deep learning (DL) -based parameter extraction method for transistor compact models, named GatedNN, is introduced. GatedNN achieves significant accuracy improvements over existing DL-based parameter extraction techniques. The innovation lies in incorporating neural network (NN) with gating mechanism and compact model-aware techniques: model parameter importance analysis and model quality check. The GatedNN uses gates to resolve optimization conflicts among model parameters by controlling gradient descent during training. The importance analysis focuses on optimizing more crucial parameters that contribute to the current curve. The model quality check cleans the training data fed to the GatedNN and ensures the robustness of the NN output. Evaluated on the BSIM-CMG model with measured FinFET data, the proposed approach demonstrates a substantial 69% error reduction compared to recently DL-based parameter extractor. Furthermore, the scalability and mathematical robustness of the generated model are tested. The proposed GatedNN also provides insights into model parameters and device characteristics, aiding in understanding and adjusting for desired characteristics. We believe the developed method can advance the development of DL-based parameter extraction.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"224 ","pages":"Article 109044"},"PeriodicalIF":1.4,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143147214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced threshold voltage tuning in FD-SOI MOSFET with ferroelectric buried oxide","authors":"Sorin Cristoloveanu ,&nbsp;Etienne Nowak ,&nbsp;Justine Barbot ,&nbsp;Laurent Grenouillet ,&nbsp;Ionut Radu","doi":"10.1016/j.sse.2024.109052","DOIUrl":"10.1016/j.sse.2024.109052","url":null,"abstract":"<div><div>A ferroelectric buried oxide is demonstrated to considerably enhance the tunability of the threshold voltage in FD-SOI transistors. The polarization mechanism makes the rate of change of threshold voltage with back-gate voltage increase tremendously from 4–5 % to more than 50 %. Our model and simulations show that with 1 V applied on the ground-plane, the threshold voltage is shifted by half a volt, which dramatically improves power consumption and speed.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"224 ","pages":"Article 109052"},"PeriodicalIF":1.4,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143147209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Editorial: Special Issue – EUROSOI-ULIS 2023 (Full-Length)","authors":"","doi":"10.1016/j.sse.2024.109037","DOIUrl":"10.1016/j.sse.2024.109037","url":null,"abstract":"","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"224 ","pages":"Article 109037"},"PeriodicalIF":1.4,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143147211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on electrical performance of AlGaN/GaN high electron mobility transistor based on cap layer design","authors":"Tieying Zhang,&nbsp;Peng Cui,&nbsp;Xin Luo,&nbsp;Siheng Chen,&nbsp;Liu Wang,&nbsp;Jiacheng Dai,&nbsp;Kaifa Qi,&nbsp;Handoko Linewih,&nbsp;Zhaojun Lin,&nbsp;Xiangang Xu,&nbsp;Jisheng Han","doi":"10.1016/j.sse.2024.109051","DOIUrl":"10.1016/j.sse.2024.109051","url":null,"abstract":"<div><div>This study investigates the impact of different cap layers on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs). By comparing the fabricated AlGaN/GaN HEMTs with GaN and AlN cap layers, it was found that AlN cap layer increases the two-dimensional electron gas (2DEG) density due to its superior passivation and polarization effects, yielding a higher saturation current and boosting breakdown voltage from 615 V (GaN) to 895 V (AlN). Sentaurus TCAD simulations confirm these findings, showing a deeper energy band triangular potential well in AlN-capped HEMTs, leading to a 2DEG electron density of 1.19 × 10¹³ cm⁻², compared to 0.93 × 10¹³ cm⁻² for GaN-capped HEMTs. The larger energy band gap of AlN cap layer provides a more effective potential barrier, reducing electric field intensity and increasing breakdown voltage. Additionally, the novel AlN-AlGaN-GaN and GaN-AlGaN-AlN graded cap layers are proposed to further enhance breakdown voltage, reaching up to 1308 V. These graded structures balance the electric field, block electron leakage, and improve electron transfer, providing a significant performance boost. This study underscores the potential of AlN and graded cap layers for future high-performance HEMTs.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"224 ","pages":"Article 109051"},"PeriodicalIF":1.4,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143147213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A planar core-shell junctionless transistor compatible with FD-SOI Technology","authors":"Yu Yan ,&nbsp;Weijia Song ,&nbsp;Cunhua Dou ,&nbsp;Xing Zhao ,&nbsp;Shujian Xue ,&nbsp;Yong Xu ,&nbsp;Binhong Li ,&nbsp;Yun Wang ,&nbsp;Tianchun Ye ,&nbsp;Sorin Cristoloveanu","doi":"10.1016/j.sse.2025.109079","DOIUrl":"10.1016/j.sse.2025.109079","url":null,"abstract":"<div><div>A planar version of Core-Shell Junctionless transistor (CS-JL FET), fully compatible with standard FDSOI process, is proposed and documented. An undoped region (shell) is added on top of a heavily doped core that bridges the source and drain terminals. While the fundamental advantages of junctionless (JL) MOSFET are maintained, its demerits are eliminated. The CS-JL FET features normally-off operation, high current drive and excellent mobility. The impact of layer thickness, core doping, back bias and gate length are discussed.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"225 ","pages":"Article 109079"},"PeriodicalIF":1.4,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143280042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of substrate temperature on the electrical and photovoltaic properties of V2O5 modified n-Ge heterojunction","authors":"Henry Thomas ,&nbsp;A. Ashok Kumar ,&nbsp;S. Kaleemulla ,&nbsp;V. Rajagopal Reddy","doi":"10.1016/j.sse.2025.109074","DOIUrl":"10.1016/j.sse.2025.109074","url":null,"abstract":"<div><div>Electrical and photovoltaic properties of V₂O₅/n-Ge heterojunction were realized by the deposition of V₂O₅ thin films at different substrate temperatures (room temperature (RT), T_S = 150 °C and 250 °C). Optical properties of V₂O₅ thin films were analysed and direct allowed transitions are found most probable. Infrared measurements of V₂O₅ thin films reveal vibrational bands which confirms the V=O and V–O–V bonds. The shift of these bands with increasing substrate temperature suggests variation in bond lengths which might be due to strain effects in V₂O₅ thin films. X-ray diffraction studies were also performed for V₂O₅/n-Ge heterojunctions which indicates the amorphous nature of V₂O₅ thin films for V₂O₅(RT)/n-Ge heterojunction and crystallinity of the films found to be increased by increasing the substrate temperature. Current-voltage properties of V₂O₅/n-Ge heterojunctions at different substrate temperatures were studied and found variations in barrier properties of the devices with an increase in substrate temperature. Explored forward bias current conduction mechanisms of heterojunctions reveal trap charge limited current conduction is the dominant conduction at moderately high bias potential particularly for V₂O₅(T_S = 150 °C and 250 °C)/n-Ge heterojunctions. Photovoltaic properties of V₂O₅/n-Ge heterojunctions indicate notable responsivity of V₂O₅ thin films under illumination (100 mW/cm²) at increased substrate temperature. The sensitivity of the V₂O₅(150 °C)/n-Ge heterojunction was found to be maximum than other heterojunctions whereas the photoresponsivity and specific detectivity of the heterojunction shows significant variation with bias and substrate temperature. The electrical and photoresponsive properties of V₂O₅ thin films on n-Ge substrate altered effectively by substrate temperature of V₂O₅ thin films. This triggers the variation of these properties by changing the conductivity of thin films with doping or post annealing conditions.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"225 ","pages":"Article 109074"},"PeriodicalIF":1.4,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Si/Ge1−xSnx/Si transistors with highly transparent Al contacts","authors":"Lukas Wind ,&nbsp;Stefan Preiß ,&nbsp;Daniele Nazzari ,&nbsp;Johannes Aberl ,&nbsp;Enrique Prado Navarrete ,&nbsp;Moritz Brehm ,&nbsp;Lilian Vogl ,&nbsp;Andrew M. Minor ,&nbsp;Masiar Sistani ,&nbsp;Walter M. Weber","doi":"10.1016/j.sse.2025.109069","DOIUrl":"10.1016/j.sse.2025.109069","url":null,"abstract":"<div><div>We study the monolithic quasi-ohmic contact formation with single-elementary Al to Ge<span><math><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>Sn<span><math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math></span> channel devices with various Sn concentrations between 0.5<!--> <!-->% and 4<!--> <!-->%. Thereby we investigate the influence of increasing Sn content on the electrical transport properties in field-effect transistors for a wide temperature range between 77<!--> <!-->K and 400<!--> <!-->K. At low temperatures, the devices exhibit improved performance metrics, promising for cryo-CMOS applications. Compared to pure Ge control devices, the introduction of Sn into the channel leads to a 20 times increased on-current. In a multi-gate architecture, we analyze the decoupled influence of the carrier injection through the metal–semiconductor junction and the channel conduction.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"225 ","pages":"Article 109069"},"PeriodicalIF":1.4,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"3D (micro/nano) CdO/p-Si co-doped Zn and La heterojunctions perform as solar light photodetectors","authors":"Bestoon Anwer Gozeh ,&nbsp;Lary H. Slewa ,&nbsp;Cheman Baker Ismael ,&nbsp;Sarwar Ibrahim Saleh ,&nbsp;Abdulkadir Yildiz ,&nbsp;Fahrettin Yakuphanoglu","doi":"10.1016/j.sse.2025.109078","DOIUrl":"10.1016/j.sse.2025.109078","url":null,"abstract":"<div><div>Cadmium oxide is among the most appealing materials since it may be utilized in a variety of applications, including photodetector. Al/La-Zn/co-doped CdO/p-type Si/Al photodetectors were fabricated using the sol–gel spin coat technique, with the CdO interface layer, varying concentrations of La (0.1, 0.5, 2, and 4 at%), and constant Zn (1 at%). Each film was grown on glass and silicon substrates so that their optical and electrical properties could be evaluated. Analyses were conducted on the morphological, optical, and electrical properties of transparent, co-doped CdO photodetectors. Using a field emission scanning electron microscope and energy dispersive X-ray, the morphological properties and elemental compositions of prepared materials The FESEM images revealed a 3-D micro/nanostructure of La/Zn-co-CdO form, characterized by the formation of microspheres by the use of nanoneedles. Additionally, the development rate of the films was observed to be inhibited by the co-doping of CdO with La-Zn. The transmittance measurements show that the prepared films exhibit a ranging from 40 to 70 % in the visible spectrum. The optical bandgap of prepared thin films measured by linear fitting where increases linearly with increasing La-Zn co-dopant concentration and was found in range between (2.07 and 2.27 <!--> <!-->eV). When CdO was co-doped with La (0.1 at%) and Zn (1 at%), the I-V properties of the produced photodetectors revealed high rectifying behavior. The photovoltaic and photoelectrical behaviors are shown, together with associated parameters. Additionally, the dopant concentration of (La 0.1 and Zn 1) at% has the highest photoresponse behavior at about 4085, surpassing findings in prior research. The highest photosensitivity of 6.3 × 10⁻⁴ has been determined for La 0.1 and Zn 1) at%. The strong rectifying characteristics, together with the photovoltaic, photoelectrical, and photoresponse properties, indicate that the fabricated (La 0.1 and Zn 1) at% co-doped CdO-based photodetector is suitable for optoelectronic applications, particularly in sensors and photodetectors.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"225 ","pages":"Article 109078"},"PeriodicalIF":1.4,"publicationDate":"2025-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}