Solid-state Electronics最新文献

{"title":"Editorial: Special Issue – EUROSOI-ULIS 2023 (Full-Length)","authors":"","doi":"10.1016/j.sse.2024.109037","DOIUrl":"10.1016/j.sse.2024.109037","url":null,"abstract":"","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"224 ","pages":"Article 109037"},"PeriodicalIF":1.4,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143147211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on electrical performance of AlGaN/GaN high electron mobility transistor based on cap layer design","authors":"Tieying Zhang,&nbsp;Peng Cui,&nbsp;Xin Luo,&nbsp;Siheng Chen,&nbsp;Liu Wang,&nbsp;Jiacheng Dai,&nbsp;Kaifa Qi,&nbsp;Handoko Linewih,&nbsp;Zhaojun Lin,&nbsp;Xiangang Xu,&nbsp;Jisheng Han","doi":"10.1016/j.sse.2024.109051","DOIUrl":"10.1016/j.sse.2024.109051","url":null,"abstract":"<div><div>This study investigates the impact of different cap layers on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs). By comparing the fabricated AlGaN/GaN HEMTs with GaN and AlN cap layers, it was found that AlN cap layer increases the two-dimensional electron gas (2DEG) density due to its superior passivation and polarization effects, yielding a higher saturation current and boosting breakdown voltage from 615 V (GaN) to 895 V (AlN). Sentaurus TCAD simulations confirm these findings, showing a deeper energy band triangular potential well in AlN-capped HEMTs, leading to a 2DEG electron density of 1.19 × 10¹³ cm⁻², compared to 0.93 × 10¹³ cm⁻² for GaN-capped HEMTs. The larger energy band gap of AlN cap layer provides a more effective potential barrier, reducing electric field intensity and increasing breakdown voltage. Additionally, the novel AlN-AlGaN-GaN and GaN-AlGaN-AlN graded cap layers are proposed to further enhance breakdown voltage, reaching up to 1308 V. These graded structures balance the electric field, block electron leakage, and improve electron transfer, providing a significant performance boost. This study underscores the potential of AlN and graded cap layers for future high-performance HEMTs.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"224 ","pages":"Article 109051"},"PeriodicalIF":1.4,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143147213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A planar core-shell junctionless transistor compatible with FD-SOI Technology","authors":"Yu Yan ,&nbsp;Weijia Song ,&nbsp;Cunhua Dou ,&nbsp;Xing Zhao ,&nbsp;Shujian Xue ,&nbsp;Yong Xu ,&nbsp;Binhong Li ,&nbsp;Yun Wang ,&nbsp;Tianchun Ye ,&nbsp;Sorin Cristoloveanu","doi":"10.1016/j.sse.2025.109079","DOIUrl":"10.1016/j.sse.2025.109079","url":null,"abstract":"<div><div>A planar version of Core-Shell Junctionless transistor (CS-JL FET), fully compatible with standard FDSOI process, is proposed and documented. An undoped region (shell) is added on top of a heavily doped core that bridges the source and drain terminals. While the fundamental advantages of junctionless (JL) MOSFET are maintained, its demerits are eliminated. The CS-JL FET features normally-off operation, high current drive and excellent mobility. The impact of layer thickness, core doping, back bias and gate length are discussed.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"225 ","pages":"Article 109079"},"PeriodicalIF":1.4,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143280042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of substrate temperature on the electrical and photovoltaic properties of V2O5 modified n-Ge heterojunction","authors":"Henry Thomas ,&nbsp;A. Ashok Kumar ,&nbsp;S. Kaleemulla ,&nbsp;V. Rajagopal Reddy","doi":"10.1016/j.sse.2025.109074","DOIUrl":"10.1016/j.sse.2025.109074","url":null,"abstract":"<div><div>Electrical and photovoltaic properties of V₂O₅/n-Ge heterojunction were realized by the deposition of V₂O₅ thin films at different substrate temperatures (room temperature (RT), T_S = 150 °C and 250 °C). Optical properties of V₂O₅ thin films were analysed and direct allowed transitions are found most probable. Infrared measurements of V₂O₅ thin films reveal vibrational bands which confirms the V=O and V–O–V bonds. The shift of these bands with increasing substrate temperature suggests variation in bond lengths which might be due to strain effects in V₂O₅ thin films. X-ray diffraction studies were also performed for V₂O₅/n-Ge heterojunctions which indicates the amorphous nature of V₂O₅ thin films for V₂O₅(RT)/n-Ge heterojunction and crystallinity of the films found to be increased by increasing the substrate temperature. Current-voltage properties of V₂O₅/n-Ge heterojunctions at different substrate temperatures were studied and found variations in barrier properties of the devices with an increase in substrate temperature. Explored forward bias current conduction mechanisms of heterojunctions reveal trap charge limited current conduction is the dominant conduction at moderately high bias potential particularly for V₂O₅(T_S = 150 °C and 250 °C)/n-Ge heterojunctions. Photovoltaic properties of V₂O₅/n-Ge heterojunctions indicate notable responsivity of V₂O₅ thin films under illumination (100 mW/cm²) at increased substrate temperature. The sensitivity of the V₂O₅(150 °C)/n-Ge heterojunction was found to be maximum than other heterojunctions whereas the photoresponsivity and specific detectivity of the heterojunction shows significant variation with bias and substrate temperature. The electrical and photoresponsive properties of V₂O₅ thin films on n-Ge substrate altered effectively by substrate temperature of V₂O₅ thin films. This triggers the variation of these properties by changing the conductivity of thin films with doping or post annealing conditions.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"225 ","pages":"Article 109074"},"PeriodicalIF":1.4,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Si/Ge1−xSnx/Si transistors with highly transparent Al contacts","authors":"Lukas Wind ,&nbsp;Stefan Preiß ,&nbsp;Daniele Nazzari ,&nbsp;Johannes Aberl ,&nbsp;Enrique Prado Navarrete ,&nbsp;Moritz Brehm ,&nbsp;Lilian Vogl ,&nbsp;Andrew M. Minor ,&nbsp;Masiar Sistani ,&nbsp;Walter M. Weber","doi":"10.1016/j.sse.2025.109069","DOIUrl":"10.1016/j.sse.2025.109069","url":null,"abstract":"<div><div>We study the monolithic quasi-ohmic contact formation with single-elementary Al to Ge<span><math><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></math></span>Sn<span><math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math></span> channel devices with various Sn concentrations between 0.5<!--> <!-->% and 4<!--> <!-->%. Thereby we investigate the influence of increasing Sn content on the electrical transport properties in field-effect transistors for a wide temperature range between 77<!--> <!-->K and 400<!--> <!-->K. At low temperatures, the devices exhibit improved performance metrics, promising for cryo-CMOS applications. Compared to pure Ge control devices, the introduction of Sn into the channel leads to a 20 times increased on-current. In a multi-gate architecture, we analyze the decoupled influence of the carrier injection through the metal–semiconductor junction and the channel conduction.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"225 ","pages":"Article 109069"},"PeriodicalIF":1.4,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"3D (micro/nano) CdO/p-Si co-doped Zn and La heterojunctions perform as solar light photodetectors","authors":"Bestoon Anwer Gozeh ,&nbsp;Lary H. Slewa ,&nbsp;Cheman Baker Ismael ,&nbsp;Sarwar Ibrahim Saleh ,&nbsp;Abdulkadir Yildiz ,&nbsp;Fahrettin Yakuphanoglu","doi":"10.1016/j.sse.2025.109078","DOIUrl":"10.1016/j.sse.2025.109078","url":null,"abstract":"<div><div>Cadmium oxide is among the most appealing materials since it may be utilized in a variety of applications, including photodetector. Al/La-Zn/co-doped CdO/p-type Si/Al photodetectors were fabricated using the sol–gel spin coat technique, with the CdO interface layer, varying concentrations of La (0.1, 0.5, 2, and 4 at%), and constant Zn (1 at%). Each film was grown on glass and silicon substrates so that their optical and electrical properties could be evaluated. Analyses were conducted on the morphological, optical, and electrical properties of transparent, co-doped CdO photodetectors. Using a field emission scanning electron microscope and energy dispersive X-ray, the morphological properties and elemental compositions of prepared materials The FESEM images revealed a 3-D micro/nanostructure of La/Zn-co-CdO form, characterized by the formation of microspheres by the use of nanoneedles. Additionally, the development rate of the films was observed to be inhibited by the co-doping of CdO with La-Zn. The transmittance measurements show that the prepared films exhibit a ranging from 40 to 70 % in the visible spectrum. The optical bandgap of prepared thin films measured by linear fitting where increases linearly with increasing La-Zn co-dopant concentration and was found in range between (2.07 and 2.27 <!--> <!-->eV). When CdO was co-doped with La (0.1 at%) and Zn (1 at%), the I-V properties of the produced photodetectors revealed high rectifying behavior. The photovoltaic and photoelectrical behaviors are shown, together with associated parameters. Additionally, the dopant concentration of (La 0.1 and Zn 1) at% has the highest photoresponse behavior at about 4085, surpassing findings in prior research. The highest photosensitivity of 6.3 × 10⁻⁴ has been determined for La 0.1 and Zn 1) at%. The strong rectifying characteristics, together with the photovoltaic, photoelectrical, and photoresponse properties, indicate that the fabricated (La 0.1 and Zn 1) at% co-doped CdO-based photodetector is suitable for optoelectronic applications, particularly in sensors and photodetectors.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"225 ","pages":"Article 109078"},"PeriodicalIF":1.4,"publicationDate":"2025-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Revealing switching statistics and artificial synaptic properties of Bi2S3 memristor","authors":"Priya Terdalkar ,&nbsp;Dhananjay D. Kumbhar ,&nbsp;Somnath D. Pawar ,&nbsp;Kiran A. Nirmal ,&nbsp;Tae Geun Kim ,&nbsp;Shaibal Mukherjee ,&nbsp;Kishorkumar V. Khot ,&nbsp;Tukaram D. Dongale","doi":"10.1016/j.sse.2025.109076","DOIUrl":"10.1016/j.sse.2025.109076","url":null,"abstract":"<div><div>Complex information processing in neuromorphic systems relies on artificial neurons and synapses as fundamental components. Frequently, memristors are utilized as artificial synapses due to their straightforward configurations, capacity for gradual conductance modulation, and compatibility with high-density integration. The present study reports a novel Ag/Bi₂S₃/FTO memristor, fabricated using the arrested precipitation technique (APT) based solution processable method. Characterization techniques, including XRD, Raman scattering, and FESEM with EDS, were employed to evaluate the properties of Bi₂S₃. The device exhibited robust, forming-free, non-volatile resistive switching at low voltages (SET: −0.58 V and RESET: 0.42 V) with an endurance exceeding 6 x 10³ cycles and retention times greater than 1.5 x 104 s. Moreover, switching variability was modeled using different statistical distribution techniques. It can mimic learning and forgetting behaviors and different forms of spike-timing-dependent plasticity, akin to its biological counterpart. The trap-filled SCLC mechanism dominated the charge transport in the device. This work introduces new material for investigating low-power consuming electronic devices which holds significant potential for future applications in artificial intelligence electronics and neuromorphic computing systems.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"225 ","pages":"Article 109076"},"PeriodicalIF":1.4,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Balancing carrier injection/transport through CN-modification on classical hole-transport host for enhanced performance in phosphorescent OLEDs","authors":"Yeting Tao,&nbsp;Yuying Wu,&nbsp;Yaotian Zhang,&nbsp;Jingsheng Wang,&nbsp;Youtian Tao","doi":"10.1016/j.sse.2025.109075","DOIUrl":"10.1016/j.sse.2025.109075","url":null,"abstract":"<div><div>Two bipolar host materials, TCTA-3CN and TCTA-4CN, are developed by incorporating strong electron-withdrawing cyano groups at the 3- or 4-position of carbazole in classical hole-transport tris(4-carbazoyl-9-ylphenyl)amine (TCTA). Their HOMO/LUMO energy levels were significantly reduced to −5.56/−2.32 eV and −5.60/−2.48 eV, respectively, compared to −5.19/−1.92 eV for TCTA. This CN-modification results in a markedly improved carrier balance, as evidenced by a reduction in the hole/electron current ratio from &gt;16,000 for TCTA to ∼45 for both TCTA-3CN and TCTA-4CN in the corresponding single-carrier devices at 4 V. When utilized as host materials for (ppy)₂Ir(acac) based devices, a synergistic enhancement in luminescence and efficiency was observed.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"225 ","pages":"Article 109075"},"PeriodicalIF":1.4,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improving cell current in 3D NAND flash memory with fixed oxide charge","authors":"Yeeun Kim ,&nbsp;Jaejoong Jeong ,&nbsp;Seul Ki Hong ,&nbsp;Byung Jin Cho ,&nbsp;Jong Kyung Park","doi":"10.1016/j.sse.2025.109072","DOIUrl":"10.1016/j.sse.2025.109072","url":null,"abstract":"<div><div>This paper addresses the challenge of declining cell current in 3D NAND Flash memory. We propose a novel approach to deposit a positive fixed oxide charge on the backside adjacent to the filler oxide after forming a poly-Si channel, effectively improving the cell current flow within the entire string. Through TCAD simulations and experimental device fabrication, we demonstrate a significant enhancement in cell current by approximately 30%. Furthermore, we analyze the impact of positive fixed charge on channel current and investigate the influence of Poly-Si channel thickness and liner oxide thickness on current improvement. Our findings indicate promising avenues for improving 3D NAND Flash memory technology, contributing to its continued advancement in the future.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"225 ","pages":"Article 109072"},"PeriodicalIF":1.4,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143131633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Resistive Switching phenomenon in FD-SOI Ω-Gate FETs: Transistor performance recovery and back gate bias influence","authors":"C. Valdivieso,&nbsp;R. Rodriguez,&nbsp;A. Crespo-Yepes,&nbsp;J. Martin-Martinez,&nbsp;M. Nafria","doi":"10.1016/j.sse.2025.109067","DOIUrl":"10.1016/j.sse.2025.109067","url":null,"abstract":"<div><div>Resistive Switching (RS) phenomenon, usually observed in two-terminal memristor devices, refers to the reversible change in resistance of a material under an external electric field. In this work, RS has been observed in N-type Fully Depleted Silicon-On-Insulator (FDSOI) Ω-gate nanowire field-effect transistors (NW-FETs). For the first time, partial recovery of the transistor’s I_D-V_D characteristics during the RS cycling is experimentally demonstrated, indicating the potential of the device to be used both as a transistor and a memristor. The effect of increasing the back gate voltage on the RS characteristics was also experimentally investigated. It was found that higher back gate voltages enhance the RS parameters, thereby establishing a direct relationship between back bias and device performance.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"225 ","pages":"Article 109067"},"PeriodicalIF":1.4,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143402600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}