Investigation of reconfigurable logic gate using integrated amorphous InGaZnO ReRAM and thin-film transistor

Abstract

This paper proposes a new reconfigurable logic circuits based on InGaZnO resistive random-access memory (ReRAM) and presents a comprehensive investigation of their electrical characteristics and logic operation. Two fundamental equations that govern the transport mechanism of oxygen ions were utilized to model the formation of lateral and vertical conducting filaments in ReRAM devices in a circuit simulation environment. Based on the device models, the electrical behavior of ReRAM was examined and verified, using circuit simulators. Experimental results from dc current–voltage and pulse measurements of ReRAM and thin-film transistors (TFTs) demonstrate their electrical switching characteristics. The paper analyzes and validates the operation of two ReRAM-based logic configurations: 1 T-1 M (one transistor and one ReRAM cell) and 2 T-2 M−INV (inverter). A detailed analysis were conducted to compare the proposed ReRAM-based logic with the conventional CMOS counterparts, revealing favorable advantages in reducing transistor counts and die areas. The 1 T-1 M and 2 T-2 M−INV exhibit reconfigurable logic operations under different resistive states of ReRAM cells. Additionally, the investigations of short-circuit current profiles shows the superior performance of ReRAM-based logic gates to the CMOS counterpart in terms of power consumption. Overall, this study investigates the feasibility of ReRAM-based reconfigurable logic circuits for future low-power and high-performance computing applications.