Well-balanced 4H-SiC JBSFET: Integrating JBS diode and VDMOSFET characteristics for reliable 1700V applications

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-02-12 DOI:10.1016/j.sse.2025.109083

Chia-Lung Hung , Yi-Kai Hsiao , Jing-Neng Yao , Hao-Chung Kuo

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引用次数: 0

Abstract

SiC power devices are suitable for high voltage and temperature applications due to their higher breakdown electrical field and thermal conductivity. Recently, many SiC SBDs and VDMOSFETs have been commercially produced. In comparison to Si-IGBT devices, the inherent body diode of SiC VDMOSFETs can also be used as the freewheeling diode in inductive switching power circuits, eliminating the need for an additional packaged diode. This can save costs and reduce the footprint of the total package. However, the bipolar carrier conduction and minority carrier injection mechanism on the body diode of SiC VDMOSFETs result in a higher turn-on knee voltage and longer reverse recovery time when used as a freewheeling diode. In fact, SiC SBDs are often utilized to replace the body diode, aiming to enhance the knee voltage and reverse recovery speed. To harness both the benefits of SiC VDMOSFETs and SBDs, it is worthwhile to integrate these two types of power devices into a single monolithic chip. In this study, we fabricated integrated JBS diodes into VDMOSFETs (JBSFETs) targeting 1700 V applications. Well-behaved JBSFETs with a threshold voltage (V_th) of 1.9 V, specific on-resistance (R_on,sp) of 5.2 mΩ-cm², and acceptable blocking voltage (BV) of 2373 V have been achieved. The temperature dependence of the JBSFET device characteristics was also investigated. These results represent significant progress in implementing high-performance JBSFETs in power electronics.

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平衡良好的4H-SiC jbfet：集成了JBS二极管和VDMOSFET特性，可实现可靠的1700V应用

SiC功率器件由于具有较高的击穿电场和导热性，适用于高压和高温应用。最近，许多SiC sdd和vdmosfet已经商业化生产。与Si-IGBT器件相比，SiC vdmosfet的固有主体二极管也可以用作感应开关电源电路中的自由旋转二极管，从而消除了额外封装二极管的需要。这可以节省成本并减少整个封装的占地面积。然而，SiC vdmosfet主体二极管上的双极载流子传导和少数载流子注入机制导致其作为自由旋转二极管使用时具有较高的导通膝电压和较长的反向恢复时间。事实上，SiC sdd经常被用来取代主体二极管，目的是提高膝关节电压和反向恢复速度。为了利用SiC vdmosfet和sdd的优势，将这两种类型的功率器件集成到单个单片芯片中是值得的。在这项研究中，我们将集成的JBS二极管制作成针对1700 V应用的vdmosfet （jbsfet）。性能良好的jbsfet的阈值电压（Vth）为1.9 V，比导通电阻（Ron,sp）为5.2 mΩ-cm2，可接受阻断电压（BV）为2373 V。研究了温度对jbset器件特性的影响。这些结果代表了在电力电子领域实现高性能jbsfet的重大进展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.